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    FDT86102LZ Search Results

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    FDT86102LZ Price and Stock

    onsemi FDT86102LZ

    MOSFET N-CH 100V 6.6A SOT223-4
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    DigiKey FDT86102LZ Cut Tape 7,403 1
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    • 10 $1.842
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    • 1000 $0.94904
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    FDT86102LZ Digi-Reel 7,403 1
    • 1 $2.84
    • 10 $1.842
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    • 10000 $0.88775
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    FDT86102LZ Reel 4,000 4,000
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    Avnet Americas FDT86102LZ Reel 8,000 15 Weeks 4,000
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    FDT86102LZ Ammo Pack 53 Weeks, 4 Days 1
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    FDT86102LZ Bulk 18 Weeks, 3 Days 1
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    Mouser Electronics FDT86102LZ 41,293
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    Verical FDT86102LZ 4,000 250
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    FDT86102LZ 1,666 8
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    Arrow Electronics FDT86102LZ Cut Strips 1,666 15 Weeks 1
    • 1 $2.2893
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    • 100 $0.9579
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    Newark FDT86102LZ Cut Tape 1,854 1
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    FDT86102LZ Cut Tape 283 1
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    FDT86102LZ Reel 4,000
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    Future Electronics FDT86102LZ Reel 4,000 25 Weeks 4,000
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    Onlinecomponents.com FDT86102LZ 4,000
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    Ameya Holding Limited FDT86102LZ 57,930
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    NexGen Digital FDT86102LZ 4,000
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    Richardson RFPD FDT86102LZ 4,000
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    Avnet Silica FDT86102LZ 16 Weeks 4,000
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    Chip One Stop FDT86102LZ Cut Tape 2,459
    • 1 $2.1
    • 10 $1.45
    • 100 $0.895
    • 1000 $0.767
    • 10000 $0.765
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    Chip-Germany GmbH FDT86102LZ 2,468
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    EBV Elektronik FDT86102LZ 17 Weeks 4,000
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    Master Electronics FDT86102LZ 4,000
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    Wuhan P&S FDT86102LZ 1,636 1
    • 1 $2.48
    • 10 $2.48
    • 100 $1.59
    • 1000 $1.2
    • 10000 $1.2
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    Fairchild Semiconductor Corporation FDT86102LZ

    N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ
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    Win Source Electronics FDT86102LZ 12,049
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    • 100 $1.3406
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    FDT86102LZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDT86102LZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 6.6A SOT-223 Original PDF

    FDT86102LZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDT86102LZ

    Abstract: No abstract text available
    Text: FDT86102LZ N-Channel PowerTrench MOSFET 100 V, 6.6 A, 28 mΩ Features General Description ̈ Max rDS on = 28 mΩ at VGS = 10 V, ID = 6.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and


    Original
    FDT86102LZ OT-223 FDT86102LZ PDF

    FDT86102LZ

    Abstract: sot 26 Dual N-Channel MOSFET
    Text: FDT86102LZ N-Channel PowerTrench MOSFET 100 V, 6.6 A, 28 mΩ Features General Description „ Max rDS on = 28 mΩ at VGS = 10 V, ID = 6.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and


    Original
    FDT86102LZ OT-223 FDT86102LZ sot 26 Dual N-Channel MOSFET PDF