Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR DF15005S thru DF1512S REVERSE VOLTAGE - 50 to 1200 Volts FORWARD CURRENT - 1.5 Amperes SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES DF-S Rating to 1200V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.
|
Original
|
DF15005S
DF1512S
E95060
300us
|
PDF
|
sb3150
Abstract: No abstract text available
Text: SB3150 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE FORWARD CURRENT FEATURES – – 150 Volts 3.0 Amperes DO-201AD • Metal-Semiconductor junction with guard ring • Epitaxial construction • Low forward voltage drop • High current capability •The plastic material carries UL recognition 94V-0
|
Original
|
SB3150
DO-201AD
DO-201AD
sb3150
|
PDF
|
AON7408
Abstract: Design with PIN diode alpha
Text: AON7408 30V N-Channel MOSFET General Description Features The AON7408 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in general purpose applications. VDS (V) = 30V ID = 23A (VGS = 10V)
|
Original
|
AON7408
AON7408
Design with PIN diode alpha
|
PDF
|
AON7410
Abstract: DFN 3x3 h1010
Text: AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. VDS (V) = 30V
|
Original
|
AON7410
AON7410
DFN 3x3
h1010
|
PDF
|
SSPA ka Band
Abstract: Boeing Skynet Electronic EMC RF Labs Resistor ANIK F1 rover hughes Hybrid Couplers transformation turksat transponder
Text: Over Thirty Years Florida RF Labs / EMC Technology has been supplying RF Passive Components for space flight missions for over 30 years. We have participated in over 150 military, commercial and scientific satellite programs such as the Mars Exploration Rover. Our capabilities to
|
Original
|
Feb2010
SSPA ka Band
Boeing
Skynet Electronic
EMC RF Labs Resistor
ANIK F1
rover
hughes
Hybrid Couplers
transformation
turksat transponder
|
PDF
|
AON7212
Abstract: No abstract text available
Text: AON7212 30V N-Channel MOSFET General Description Product Summary The AON7212 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of
|
Original
|
AON7212
AON7212
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SST2603 -5A, -20V,RDS ON 65mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 1.90REF 0.95REF 0.95REF 1.2 REF The SST2603 utilized advanced processing techniques to achieve the lowest 0.37 REF
|
Original
|
SST2603
OT-26
90REF
95REF
SST2603
10-Feb-2010
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VRE3050 VRE3050 duct Innovation From P r oVRE3050 Precision Voltage Reference FEATURES DESCRIPTION The VRE3050 is a low cost, high precision 5 V reference that operates from +10 V. The device features a buried zener for low noise and excellent long term
|
Original
|
VRE3050
VRE3050
1Hz-10Hz)
VRE3050DS
|
PDF
|
Liteon ES2D
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR ES2A thru ES2J REVERSE VOLTAGE - 50 to 600 Volts FORWARD CURRENT - 2.0 Amperes SURFACE MOUNT SUPER FAST RECTIFIERS FEATURES SMB Glass passivated chip Super fast switching for high efficiency For surface mounted applications Low forward voltage drop and high current capability
|
Original
|
300us
Liteon ES2D
|
PDF
|
fp6321
Abstract: driver mosfet fp6321
Text: FP6321 fitipower integrated technology lnc. Synchronous Buck PWM DC-DC Controller Description Features The FP6321 is designed to drive two N-channel MOSFETs in a synchronous rectified buck topology. It provides the output adjustment, internal soft-start, frequency compensation networks, monitoring and
|
Original
|
FP6321
FP6321
300kHz
MO-012-E
FP6321-1
-FEB-2010
driver mosfet fp6321
|
PDF
|
1092-01a-5
Abstract: 5V712
Text: TGA2522-SM 17- 24 GHz Power Amplifier Key Features • Frequency Range 17 GHz to 24 GHz. • 28 dBm Output Psat, 26 dBm P1dB, typical. • 35 dBm Output TOI. • 17 dB Typical Gain. • Integrated power detection with 30 dB dynamic range. • High ESD tolerance.
|
Original
|
TGA2522-SM
TGA2522-SM,
Feb2010
1092-01a-5
5V712
|
PDF
|
