"Ferroelectric RAM"
Abstract: FeRAM Ferroelectric RAM MN63Y1005 ferroelectric M00364BE NRZL block diagram
Text: New FeRAM Embedded IC MN63Y1005 for Contactless IC card and Tag • Overview MN63Y1005 is a nonvolatile ferroelectric random access memory FeRAM embedded IC for contactless IC card and tag. The IC is powered by radio waves from a read/write unit and for
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MN63Y1005
MN63Y1005
"Ferroelectric RAM"
FeRAM
Ferroelectric RAM
ferroelectric
M00364BE
NRZL block diagram
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JISX6319-4
Abstract: MN63Y1210 FELICA MN63Y1208 nfc antenna design NFC RF QFN016-P-0304C nfc tag nfc antenna test
Text: NFC Tag with Built-in FeRAM NFC Tag LSI MN63Y1208 Overview MN63Y1208 is an NFC tag LSI, which is compliant with the NFC forum specification. The built-in fast, low-power non-volatile memory FeRAM allows for stable non-contact communication even while no external power is supplied. Additionally, AES
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MN63Y1208
MN63Y1208
JISX6319-4
ISO/IEC14443
16-pin
JISX6319-4
MN63Y1210
FELICA
nfc antenna design
NFC RF
QFN016-P-0304C
nfc tag
nfc antenna test
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Untitled
Abstract: No abstract text available
Text: FEDR44V064A-01 Issue Date: Apr. 22, 2013 MR44V064A 64k 8,192-Word 8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire
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FEDR44V064A-01
MR44V064A
192-Word
MR44V064A
192-word
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Untitled
Abstract: No abstract text available
Text: FEDR45V256A-01 Issue Date: Nov. 12, 2013 MR45V256A 256k 32,768-Word 8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V256A is accessed using Serial
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FEDR45V256A-01
MR45V256A
768-Word
MR45V256A
768-word
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taa900
Abstract: No abstract text available
Text: FEDR44V064A-01 Issue Date: Apr. 22, 2013 MR44V064A 64k 8,192-Word 8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire
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FEDR44V064A-01
MR44V064A
192-Word
MR44V064A
192-word
taa900
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Untitled
Abstract: No abstract text available
Text: PEDR45V256A-05 Issue Date: Oct. 17, 2011 MR45V256A 256k 32,768-Word 8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V256A is accessed using Serial
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PEDR45V256A-05
MR45V256A
768-Word
MR45V256A
768-word
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MR44V064A
Abstract: PEDR44V064A-05
Text: PEDR44V064A-05 Issue Date: Oct. 17, 2011 MR44V064A 64k 8,192-Word 8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire
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PEDR44V064A-05
MR44V064A
192-Word
MR44V064A
192-word
PEDR44V064A-05
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FeRAM
Abstract: interfacing sram and dram PZT material Wordwise universal eeprom
Text: FeRAM Memory What are ferro-electric RAMs ? are are non-volatile non-volatile memories memories like (like Flash Flash) have have aa DRAMs DRAMs read/write read/write performance performance •• •• have have low low voltage voltage // low low power
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SrBi22Ta22O99)
PbZrTiO33)
FeRAM
interfacing sram and dram
PZT material
Wordwise
universal eeprom
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20034
Abstract: FeRAM cosmoram 512MB SRAM TRUEFFS LQFP64 TMP86FM48F TMP86FM48U Diskonchip
Text: VOLUME 129 東芝半導体情報誌アイ 2003年4月号 CONTENTS 4 INFORMATION •世界最大容量32メガビット FeRAMを開発 .P2 ■バースト機能搭載擬似SRAMの インターフェイス仕様を共通化 .P2
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03-3457-3405FAX.
96mm2
875m2
20034
FeRAM
cosmoram
512MB SRAM
TRUEFFS
LQFP64
TMP86FM48F
TMP86FM48U
Diskonchip
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Untitled
Abstract: No abstract text available
Text: FEDR48V256C-01 Issue Date: Nov. 13, 2013 MR48V256C 32,768-Word 8-Bit FeRAM Ferroelectric Random Access Memory GENERAL DESCRIPTION The MR48V256C is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. Unlike SRAMs, this device, whose cells are
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FEDR48V256C-01
MR48V256C
768-Word
MR48V256C
768-word
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Untitled
Abstract: No abstract text available
Text: FEDR45V200A-01 Issue Date: Jan. 31, 2014 MR45V200A 2M 262,144-Word 8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V200A is a nonvolatile 262,144-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V200A is accessed using
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FEDR45V200A-01
MR45V200A
144-Word
MR45V200A
144-word
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Untitled
Abstract: No abstract text available
Text: FEDR45V032A-01 Issue Date: Oct. 23, 2013 MR45V032A 32k 4,096-Word 8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V032A is a nonvolatile 4,096-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V032A is accessed using Serial
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FEDR45V032A-01
MR45V032A
096-Word
MR45V032A
096-word
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FeRAM
Abstract: No abstract text available
Text: PEDR48V256A-06 Issue Date: Oct. 17, 2011 MR48V256A 32,768-Word 8-Bit FeRAM Ferroelectric Random Access Memory GENERAL DESCRIPTION The MR48V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. Unlike SRAMs, this device, whose cells are
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PEDR48V256A-06
MR48V256A
768-Word
MR48V256A
768-word
FeRAM
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Untitled
Abstract: No abstract text available
Text: PEDR45V032A-05 Issue Date: Nov. 08, 2011 MR45V032A 32k 4,096-Word 8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V032A is a nonvolatile 4,096-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V032A is accessed using Serial
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PEDR45V032A-05
MR45V032A
096-Word
MR45V032A
096-word
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Part No. MN63Y1210A Package Code No. SSOP016-P-0225E Publication date: June 2013 Ver. AEM 1 Contents Chapter 1 Overview . 9 1.1
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MN63Y1210A
SSOP016-P-0225E
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MR25H10
Abstract: MR25H10C M25H1 MR25H10CDC M25H10 MR25H10M mr25h10mdc MR25H10CDCR MO-229 DFN 10 socket
Text: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Fast, simple SPI interface with up to 40 MHz clock rate • 2.7 to 3.6 Volt power supply range
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MR25H10
MR25H10
576-bit
M25H10
MR25H10C
M25H1
MR25H10CDC
MR25H10M
mr25h10mdc
MR25H10CDCR
MO-229
DFN 10 socket
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Untitled
Abstract: No abstract text available
Text: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.
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MB85R2001/MB85R2002
A0-16
MB85RS256
256K-bit
MB85R4xxx
MB85R2001
MB85R2002
MB85R1001
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mcz 300 1bd
Abstract: SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode
Text: 개정 신판 도해 반도체 가이드 개정신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 발간에 즈음하여 Color and Visual Guide: Semiconductors Published by TOSHIBA CORPORATION
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128bit
Division/e-Busin125
mcz 300 1bd
SIT Static Induction Transistor
HgCdTe
philips igbt induction cooker
UJT pin identification
thyristor BT 161
Photo DIAC
rct Thyristor
dg23 transistor smd
power IGBT MOSFET GTO SCR diode
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DFN 10 socket
Abstract: No abstract text available
Text: MR25H256 FEATURES • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate • 2.7 to 3.6 Volt power supply range
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MR25H256
256Kb
MR25H256
144-bit
DFN 10 socket
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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IC SEM 2004
Abstract: ED-4701-304 AB-6201 failure rate TDDB JIS-C-7032 ED-4701-102 ED-4701-303 EIAJ AB-6201 Z81151981 HGSM
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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GL-23
IC SEM 2004
ED-4701-304
AB-6201
failure rate TDDB
JIS-C-7032
ED-4701-102
ED-4701-303
EIAJ AB-6201
Z81151981
HGSM
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MN63Y2006
Abstract: digital security system block diagram FeRAM
Text: Ensures Safety of Customers with High-Level Security Technology LSI for Device Authentication Tag MN63Y2006 Overview MN63Y2006 is a ultra-small LSI which can be used for device authentication with its cryptography feature, ensuring high level of security equal to or higher than Triple-DES.
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MN63Y2006
MN63Y2006
digital security system block diagram
FeRAM
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PANASONIC sram card 34 pin
Abstract: MN101CY177 FP044
Text: Panasonic C language-oriented 8-bit Microcontroller MN101CY177 with ferroelectric RAM FeRAM embedded I O verview This microcontroller is a sin gle-chip microcontroller that equips ferroelectric RA M (FeRAM ) with the C language-oriented high speed 8 -b it CPU core. It incorporates h igh -p recision 10-bit A /D converter, m ulti-functioned timer counter, serial
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MN101CY177
10-bit
192x8-b
PANASONIC sram card 34 pin
FP044
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diode G727
Abstract: IRH150 T0204 731 MOSFET annealing copper g730 J600 MOSFET G-731 IRH15Q
Text: HE D I 4055452 GQG^SG 7 | INTERNATIONAL R E C T I F I E R Preliminary Data Sheet No. PD-9.478A INTERNATIONAL RECTIFIER HEXF ET TRANSISTORS IRH15Q RAD HARD Product Summary 100 Volt, 0.0550, Rad Hard HEXFET International R e ctifie r’s RAD HARD H EXFETs demonstrate excellent threshold voltage stability and
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40ss4sa
IRH15Q
IRH150
T-39-13
G-737
diode G727
T0204
731 MOSFET
annealing copper
g730
J600 MOSFET
G-731
IRH15Q
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