Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FET 10A 600V Search Results

    FET 10A 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    FET 10A 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2761

    Abstract: mosfet 10a 600v 2SK2761-01MR
    Text: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		PDF 2SK2761-01MR 2SK2761 mosfet 10a 600v 2SK2761-01MR

    2SK2761

    Abstract: No abstract text available
    Text: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		PDF 2SK2761-01MR 2SK2761

    2SK2761-01MR

    Abstract: 2SK2761
    Text: 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		PDF 2SK2761-01MR 2SK2761-01MR 2SK2761

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S2DPD 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0741EJ0003 Rev.0.03 Nov 30, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.53  typ. (at ID = 4 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		PDF RJK60S2DPD R07DS0741EJ0003 PRSS0004ZG-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6012DPP-E0 600V - 10A - MOS FET High Speed Power Switching R07DS0611EJ0100 Rev.1.00 Mar 16, 2012 Features • Low on-resistance RDS on = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		PDF RJK6012DPP-E0 R07DS0611EJ0100 PRSS0003AG-A O-220FP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK6012DPP-E0 600V - 10A - MOS FET High Speed Power Switching R07DS0611EJ0100 Rev.1.00 Mar 16, 2012 Features • Low on-resistance RDS on = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		PDF RJK6012DPP-E0 R07DS0611EJ0100 PRSS0003AG-A O-220FP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL6012DPE R07DS0814EJ0200 Previous: REJ03G1750-0100 Rev.2.00 Jun 21, 2012 600V - 10A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.88  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL6012DPE R07DS0814EJ0200 REJ03G1750-0100) PRSS0004AE-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJL6012DPE R07DS0814EJ0200 Previous: REJ03G1750-0100 Rev.2.00 Jun 21, 2012 600V - 10A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.88  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)


    Original     		PDF RJL6012DPE R07DS0814EJ0200 REJ03G1750-0100) PRSS0004AE-B

    matters

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S2DPD 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0741EJ0002 Rev.0.02 May 01, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.53  typ. (at ID = 4 A, VGS = 10 V, Ta = 25C) Outline RENESAS Package code: PRSS0004ZG-A


    Original     		PDF RJK60S2DPD R07DS0741EJ0002 PRSS0004ZG-A matters

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S2DPP-E0 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0742EJ0004 Rev.0.04 Jan 21, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.53  typ. (at ID = 4 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		PDF RJK60S2DPP-E0 R07DS0742EJ0004 PRSS0003AG-A O-220FP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK60S2DPP-E0 600V - 10A - SJ MOS FET High Speed Power Switching R07DS0742EJ0002 Rev.0.02 May 01, 2012 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.53  typ. (at ID = 4 A, VGS = 10 V, Ta = 25C) Outline RENESAS Package code: PRSS0003AG-A


    Original     		PDF RJK60S2DPP-E0 R07DS0742EJ0002 PRSS0003AG-A O-220FP)

    400V, DC INVERTER

    Abstract: No abstract text available
    Text: Targetdatasheet flow PIM 0+P, 600V, 10A Version 0102 V23990-P370-_01-PM B: with PFC/ mit PFC D: w/o PFC/ ohne PFC Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage


    Original     		PDF V23990-P370- 01-PM D81359 400V, DC INVERTER

    Untitled

    Abstract: No abstract text available
    Text: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies


    Original     		PDF IRGP50B60PDPbF IRFPE30 O-247AC

    035H

    Abstract: 30ETH06 IRFP250 IRFPE30 Ice-100
    Text: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies


    Original     		PDF IRGP50B60PDPbF IRFPE30 O-247AC 035H 30ETH06 IRFP250 IRFPE30 Ice-100

    Untitled

    Abstract: No abstract text available
    Text: PD - 94624B IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies


    Original     		PDF 94624B IRGP50B60PD O-247AC

    mos fet 120v 10A

    Abstract: No abstract text available
    Text: 2SK3513-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3513-01L mos fet 120v 10A

    IRGP50B60PDPBF

    Abstract: 035H 30ETH06 IRFP250 IRFPE30 210uH
    Text: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies


    Original     		PDF IRGP50B60PDPbF IRFPE30 O-247AC IRGP50B60PDPBF 035H 30ETH06 IRFP250 IRFPE30 210uH

    30ETH06

    Abstract: IRFP250 IRGP50B60PD
    Text: PD - 94624A IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies


    Original     		PDF 4624A IRGP50B60PD O-247AC 30ETH06 IRFP250 IRGP50B60PD

    rdx*100n60

    Abstract: RDX100N60 10A 600V MOS
    Text: RDX100N60 Transistors 10V Drive Nch MOS FET RDX100N60 zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.


    Original     		PDF RDX100N60 O-220FM rdx*100n60 RDX100N60 10A 600V MOS

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2761-01MR N-channel MOS-FET FAP-IIS Series 600V 10A 50W Outline Drawing > Features - IQ High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated > Applications


    OCR Scan     		PDF 2SK2761-01MR Tc-25

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    fet 600V 20A

    Abstract: mosfet 600V 20A SDF20N60 1d20a
    Text: PRODUCT Æutron CÂTÂL ' N-CHANNEL ENHANCEMENT MOS FET 600V, 20A , 0.35H SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE


    OCR Scan     		PDF SDF20N60 MIL-S-19500 IF-20A 300hS. fet 600V 20A mosfet 600V 20A 1d20a

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT CATTALO' Æ u tro n N-CHANNEL ENHANCEMENT MOS FET 600V, 20A, 0.35 0 SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE


    OCR Scan     		PDF SDF20N60 SYM80L IF-20A