MPF910
Abstract: MFE910 power semiconductor 1973
Text: I MFE910 MPF910 N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTOR This TMOS FET is designed for high-voltage, high-speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor of UL-to-high voltage interface and high voltage
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MFE910
MPF910
O-205AD
MPF910
MFE910
power semiconductor 1973
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Untitled
Abstract: No abstract text available
Text: SN74CBTS3384 10-BIT FET BUS SWITCH WITH SCHOTTKY DIODE CLAMPING SCDS024M – MAY 1995 – REVISED JULY 2003 D D DB, DBQ, DGV, DW, OR PW PACKAGE TOP VIEW 5-Ω Switch Connection Between Two Ports TTL-Compatible Input Levels 1OE 1B1 1A1 1A2 1B2 1B3 1A3 1A4
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SN74CBTS3384
10-BIT
SCDS024M
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M68710EL
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68710EL SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 26.6±0.2 21.2±0.2 3 2-R1.5±0.1 1 4 5 1 2 3 4 5 0.45 6±1 13.7±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY
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M68710EL
290-330MHz,
M68710EL
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RD1004
Abstract: 2SC5707 2sK4096 ECH81 rd1004ls 2SK4101 tf252th SFT1443 vf10bm3 RD2006
Text: ディスクリートデバイス 2010-7 環境にやさしい製品 超アナログ技術を極めるPower ＆RFデバイス Power 電 源 市 場 耐熱性 高アバランシェ 高耐圧・大電流 高効率 高ESD ・パワーマネジメント （LCDPDP、PC電源、照明）
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CDMA2000]
3-7300Fax
OVA21
052-453-1331Fax
06-6353-3361Fax
03-5701-1111Fax
078-928-8010Fax
078-331-8400Fax
075-371-4058Fax
052-459-3501Fax
RD1004
2SC5707
2sK4096
ECH81
rd1004ls
2SK4101
tf252th
SFT1443
vf10bm3
RD2006
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IC 741 OPAMP
Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte
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B0218
Abstract: Transistor B1214
Text: Multi-Cell Li-Ion Battery Manager ISL94212 Features The ISL94212 is a Multi-cell Li-ion battery manager IC that supervises up to 12 series connected cells. The part performs accurate monitoring, cell balancing and extensive system diagnostics functions. Three cell balancing modes are
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ISL94212
ISL94212
12-cell
ISL94212s
254mm.
MS-026,
FN7938
B0218
Transistor B1214
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intel 845 MOTHERBOARD pcb CIRCUIT diagram
Abstract: 200D6 SMD DIP-8 marking code E5 SMD ic sot23-5 4256 bwp TRANSISTOR SMD 6CW TL494 car charger schematic diagram SMD 6cw LM385 1.25V zener 6cw smd code marking mc7812a
Text: DL128/D Rev. 7, Mar-2002 Analog Integrated Circuits Power Management, Signal Conditioning and ASSP Devices Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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DL128/D
Mar-2002
r14525
DL128
intel 845 MOTHERBOARD pcb CIRCUIT diagram
200D6 SMD DIP-8
marking code E5 SMD ic sot23-5
4256 bwp
TRANSISTOR SMD 6CW
TL494 car charger schematic diagram
SMD 6cw
LM385 1.25V zener
6cw smd code marking
mc7812a
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M2902
Abstract: M2945 Tektronix 2901 M2903 fet 2903 M2944 M2948 H2900 H2936 H2945
Text: FULL SIZE D.I.L M2900, M2936 M2944, M2945 M2948 FIXED OSCILLATORS ECL and PECL 0° to 70°C HALF SIZE D.I.L H2900, H2936 H2944, H2945 H2948 Thru-Hole / Gull Wing ECLPS Logic 10 MHz to 410 MHz ECLPS, HIGH SPEED, LOW JITTER These ECLPS logic oscillators are our most advanced
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M2900,
M2936
M2944,
M2945
M2948
H2900,
H2936
H2944,
H2945
H2948
M2902
M2945
Tektronix 2901
M2903
fet 2903
M2944
M2948
H2900
H2936
H2945
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H2936
Abstract: M2945 fet 2903 H2900 H2944 H2945 H2948 M2900 M2901 M2936
Text: CRYSTAL OSCILLATORS ECL and PECL Thru-Hole / Gull Wing FULL SIZE D.I.L M package HALF SIZE D.I.L H package M2900, M2936 M2944, M2945 M2948 H2900, H2936 H2944, H2945 H2948 Description ECLPS, HIGH SPEED, LOW JITTER Commercial: 0º to 70ºC 10 MHz to 175 MHz
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M2900,
M2936
M2944,
M2945
M2948
H2900,
H2936
H2944,
H2945
H2948
H2936
M2945
fet 2903
H2900
H2944
H2945
H2948
M2900
M2901
M2936
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68710EL SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO D im ensions in mm OUTLINE DRAWING BLOCK DIAGRAM • “FT’ I PIN: ABSOLUTE MAXIMUM RATINGS Symbol Supply voltage V gg Gate bias voltage Pin Input power
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M68710EL
290-330MHz,
290-330M
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M68710EL SILICON MOS FET POWER AMPLIFIER, 290-330MHZ, 2W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm a © 1 PIN: 0 P in : RF INPUT ©VG G : GATE BIAS SUPPLY © V dd : DRAIN BIAS SUPPLY PO : RF OUTPUT © G N D : FIN
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M68710EL
290-330MHZ,
290-330M
in-20mW
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MPF910
Abstract: No abstract text available
Text: MOTOROLA SEM IC O N D U C T O R MFE910 MPF910 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE TM OS FIELD-EFFECT TRANSISTOR 60 VOLTS T h is T M O S FET is d e sig n e d for high-voltage, h igh -sp e ed sw itch ing applications su c h as line drivers, relay drivers, C M O S logic,
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MFE910
MPF910
MPF910
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M2N6660
Abstract: 2N6660 Mosfet 2903 MPF6661
Text: MOTOROLA SEM ICONDUCTOR 2N6660 MPF6660 2N6661 MPF6661 TECHNICAL DATA N-CHANNEL ENH ANCEM ENT-M ODE TM O S FIELD-EFFECT TRANSISTOR 2 .0 A M P E R E N -C H A N N E L T M O S FET T h e s e T M O S FETs are d e s ig n e d fo r h ig h -s p e e d s w itc h in g a p p li
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2N6660
MPF6660
2N6661
MPF6661
2N6660/2N6661
MPF6660/MPF6661
2N6661
M2N6660
Mosfet 2903
MPF6661
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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2N6661
Abstract: 2N6659 2N6660 MPF6659 MPF6660 MPF6661 N666
Text: MOTOROLA MAXIMUM RATINGS 2N6659 2 N6660 2N6661 Symbol MPF6659 m rrpoou MPF6661 t Rating Unft Drain-Source Voltage Vd s 35 60 90 Vdc Drain-Gate Voltage Vd G 35 60 90 Vdc Gate-Source Voltage VGS Drain Current — Continuous 1 Pulsed (2) ± 30 Vdc 2.0 3.0 'd m
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2N6659
MPF6659
2N6660
MPF6660
2N6661
MPF6661
2N6661
MPF6660
N666
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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F6659
Abstract: F6660
Text: MPF6659 thru MPF6661* MAXIMUM RATINGS Rating Symbol MPF6659 MPF6660 MPF6661 D ra in -S o u rc e V o lta g e D ra in -G a te V o lta g e G a te -S o u rc e V o lta g e VG S ±30 D ra in C u rre n t — C o n tin u o u s 1 P u lse d (2) lD 'D M 2.0 3.0 Unit
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MPF6659
MPF6660
MPF6661
MPF6661*
F6659
F6660
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741n
Abstract: 3900BE 741J bm 308 an 3900AE
Text: ANALOGUE INTEGRATED REGULATORS, S SWITCH-MODE TDA POWER 4SQ1D OR. CIRCUITS & AMR s SUPPLY COMRARATORS l i ^ L U i S.A. n CONTROLLER Features : 0 . 7.8 11 110 4 . Operating temperature : Supply voltage : Switch voltage V9 : Supply current : Voltage reference VI :
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O-116
741n
3900BE
741J
bm 308 an
3900AE
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HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic
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E-28230
S-164
CH-8902
HRMA-0470B
Semicon volume 1
HPMA-2085
HP 33002A
AVANTEK ATF26884
SJ 2036
HPMA-0470TXV
HPMA-0485
HPMA-0370
DIODE GOC 61
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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Untitled
Abstract: No abstract text available
Text: 0J N> t\3 cn CD O m rp § O T Ol CD z B a > r £ O P E R A T IO N A L H D > ft A M P L IF IE R S 0 01 4ft n o z CO s M H H W O n x i x r r w to o D w no o to TJ w c M H » 1 x o D w m o c G r > H a 03 to cn G no *0 r G O Z TJ o 10 O r c P3 to h- -J o o < n
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O-116
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TO92A
Abstract: No abstract text available
Text: ÛB MICRO ELECTRONICS CORP T - t- J ' ^ 7 DE I kCHlTflü 0DDÜb7M 0 . Multiple Transistors V C E SA T Ul 11. NO. M A X IM U M R A T IN G S X TYPE P O L A R IT Y DU AL TR AN SIST O R S Au H FE C ASE Pd (mW) 'c VCE0 (mA) (V) min max V CE 'c (mA) (V) Av BE
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O-237
MELF-002.
MELF006
L0T17aa
O-181LOW
TO92A
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032XM
Abstract: 17-B2 BE31 341S
Text: 17B2 2 METER BOOMER 144-145 MHz cushcraft C O R P O R A T I O N 951415 7/92 WARNING TH IS ANTENNA IS AN E LEC T R IC A L CONDUCTOR CONTACT WITH POW ER LIN ES CAN R ES U LT IN DEATH. O R SER IO U S IN JU RY. DO NOT IN STALL TH IS ANTENNA W H ERE TH ER E IS ANY P O SSIB ILITY O F CONTACT WITH O R HIGH VO LTAGE ARC-O VER FROM
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