LM103 zener
Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
Text: FET Circuit Applications FET Circuit Applications National Semiconductor Application Note 32 February 1970 Polycarbonate dielectric TL H 6791 – 1 Sample and Hold With Offset Adjustment The 2N4339 JFET was selected because of its low lGSS k100 pA very-low lD(OFF) (k50 pA) and low pinchoff volt-
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2N4339
2N4393
2N4393
LM103 zener
jfet cascode
2N3069
J FET RF Cascode Input
2N3070
FM3954
pierce crystal oscillator
2n4416 jfet
HI-FI tone control transistors
FM1208
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2N4416A JANTX
Abstract: 2N4416A JANTXV 2N4416A 2N4416A JAN 2N4416AJAN
Text: TECHNICAL DATA N-CHANNEL J-FET Qualified per MIL-PRF-19500/428 Devices Qualified Level JAN JANTX JANTXV 2N4416A ABSOLUTE MAXIMUM RATINGS Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation
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MIL-PRF-19500/428
2N4416A
O-206AF)
100ms;
2N4416A JANTX
2N4416A JANTXV
2N4416A
2N4416A JAN
2N4416AJAN
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JANTXV 2n4416A
Abstract: No abstract text available
Text: TECHNICAL DATA N-CHANNEL J-FET Qualified per MIL-PRF-19500/428 Devices Qualified Level JAN JANTX JANTXV 2N4416A ABSOLUTE MAXIMUM RATINGS Parameters / Test Conditions Gate-Source Voltage Drain-Source Vo ltage Drain-Gate Voltage Gate Current Power Dissipation
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MIL-PRF-19500/428
2N4416A
O-206AF)
100ms;
JANTXV 2n4416A
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2N4360
Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
Text: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.
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MFE2001
MFE2C04
MFE2005
MFE2006
MFE2133
MPF102
MPF108
MPF109
MPF111
MPF112
2N4360
2N3459
J411 fet
Solitron 2N3821
U1898E
2N5906
TIS58
MEM511
2N3920
uc451
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2N4416A JANTX
Abstract: 2N4416A 2N4416A JAN JANTXV equivalent
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET Equivalent To MIL-PRF-19500/428 DEVICES LEVELS 2N4416A MQ = JAN Equivalent MX = JANTX Equivalent
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MIL-PRF-19500/428
2N4416A
O-206AF)
100kHz
100ms;
T4-LDS-0008
2N4416A JANTX
2N4416A
2N4416A JAN
JANTXV equivalent
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buz90af
Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Text: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391
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2SK192
2SK212
2SK241
BF960
BF961
BF964
BF966S
BF981
OT103
BF996
buz90af
P7NB60FP
P4NB80FP
P6N60
P5NB60FP
2SK30A
buz91a
2SK2645
BUZ100
2SK163
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TIS88A equivalent
Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Text: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.
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20x40
111x109
TIS88A equivalent
2N3456 equivalent
J411 fet
2n5952 equivalent
2n3820 equivalent
2N5248 equivalent
fet 2N4304
2n5245 equivalent
2N4304 equivalent
2N5454 equivalent
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UC734
Abstract: KE4416 2N3821 2n5103 UC250 Solitron 2N4417
Text: field effect transistors 160 AMPLIFIERS VHF/UHF J FET/N-CHANNEL,SINGLE TYPE 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N4417 2N5103 2N5104 2N5105 KE4416 UC734 UC734E Vp C ,•• pf Volts Max. Max. *BVGSS Volts PA"CKAGE Min. IGSS nA Max. I DSS rnA
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2N3821
2N3822
2N3823
2N4223
2N4224
2N4416
2N4416A
2N4417
2N5103
2N5104
UC734
KE4416
UC250
Solitron 2N4417
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F245B
Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
Text: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten
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OCR Scan
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100-MHz
F245B
BF256
2N3820
BC264
U1898E
BFS21A
MPF105
vergleichsliste
BF320
TIS69
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U402 N CHANNEL FET
Abstract: P-Channel Depletion Mode FET zener diode color codes glass zener diode color codes j201 jfet jfet n channel ultra low noise low noise p-channel fet dual fet q7 diode sg 71 jfet photo diode
Text: LS627 PHOTO FET LIGHT SENSITIVE JFET Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR CRYSTALONICS FF627 FLAT GLASS TOP FOR EXTERNAL OPTICS ULTRA HIGH SENSITIVITY ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C unless otherwise stated Maximum Temperatures
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LS627
FF627
400mW
U402 N CHANNEL FET
P-Channel Depletion Mode FET
zener diode color codes
glass zener diode color codes
j201 jfet
jfet n channel ultra low noise
low noise p-channel fet
dual fet q7
diode sg 71
jfet photo diode
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JFET
Abstract: J-FET 2n4267 2N4303 2N4381 2N4393 2N3971 2N4119 2N4302 2N4341
Text: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET
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OCR Scan
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2N3909
2N4340
2N4340
2N3909A
2N3909
2N4341
2N4341
2N3921
2N3921
2N4352
JFET
J-FET
2n4267
2N4303
2N4381
2N4393
2N3971
2N4119
2N4302
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JFET
Abstract: 2N4303 "cross reference" 2n4393 replacement 2N4381 2n4416 jfet J-FET 2N4302 2N4303 2N4304 fet cross reference
Text: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET
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OCR Scan
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2N3909
2N4340
2N4340
2N3909A
2N3909
2N4341
2N4341
2N3921
2N3921
2N4352
JFET
2N4303 "cross reference"
2n4393 replacement
2N4381
2n4416 jfet
J-FET
2N4302
2N4303
2N4304
fet cross reference
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fet cross reference
Abstract: 2N4381 2N4302 fet 2N4304 JFET 2N5457 P-Channel JFET 2N3823 fet 2N4393 2N4303 2N4119
Text: Industry Part Number Type and Classification FET Cross Reference Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Conta Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET
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OCR Scan
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2N3909
2N4340
2N4340
2N3909A
2N3909
2N4341
2N4341
2N3921
2N3921
2N4352
fet cross reference
2N4381
2N4302
fet 2N4304
JFET 2N5457
P-Channel JFET
2N3823 fet
2N4393
2N4303
2N4119
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fet cross reference
Abstract: 2N4302 2N4381 2N4393 JFET 2N5457 2N3B19 JFET 2N6568 2N4303 2n4416 jfet
Text: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET
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OCR Scan
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2N3909
2N4340
2N4340
2N3909A
2N3909
2N4341
2N4341
2N3921
2N3921
2N4352
fet cross reference
2N4302
2N4381
2N4393
JFET 2N5457
2N3B19
JFET
2N6568
2N4303
2n4416 jfet
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hp5082-2810
Abstract: MARKING D53 HA-5160 uncompensated operational amplifier d54 marking 2N4416 HA2-5160-5
Text: HA-5160 Data Sheet November 30, 2005 FN2911.6 100MHz, JFET Input, High Slew Rate, Uncompensated, Operational Amplifier Features The HA-5160 is a wideband, uncompensated, operational amplifier with FET/Bipolar technologies and Dielectric Isolation. This monolithic amplifier features superior high
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HA-5160
FN2911
100MHz,
HA-5160
hp5082-2810
MARKING D53
uncompensated operational amplifier
d54 marking
2N4416
HA2-5160-5
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QN34
Abstract: QP-42 ha j2 vertical JFET QN77 HA2-5160-2 HA2-5160-5 HA-5160 HP5082-2810 QN-35
Text: HA-5160 Data Sheet September 1998 File Number 2911.3 100MHz, JFET Input, High Slew Rate, Uncompensated, Operational Amplifier Features The HA-5160 is a wideband, uncompensated, operational amplifier with FET/Bipolar technologies and Dielectric Isolation. This monolithic amplifier features superior high
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HA-5160
100MHz,
HA-5160
300pF
QN34
QP-42
ha j2
vertical JFET
QN77
HA2-5160-2
HA2-5160-5
HP5082-2810
QN-35
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d54 marking
Abstract: 2N4416 HA2-5160-5 HA-5160 HP5082-2810 uncompensated operational amplifier MARKING D55
Text: HA-5160 Data Sheet March 18, 2010 FN2911.7 100MHz, JFET Input, High Slew Rate, Uncompensated, Operational Amplifier Features The HA-5160 is a wideband, uncompensated, operational amplifier with FET/Bipolar technologies and Dielectric Isolation. This monolithic amplifier features superior high
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HA-5160
FN2911
100MHz,
HA-5160
d54 marking
2N4416
HA2-5160-5
HP5082-2810
uncompensated operational amplifier
MARKING D55
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Untitled
Abstract: No abstract text available
Text: • PA88A PA88PA88 • PA88A PA88, PA88A High Voltage Power Operational Amplifiers FEATURES • HIGH VOLTAGE — 450V ±225V • LOW QUIESCENT CURRENT — 2mA • HIGH OUTPUT CURRENT — 100mA • PROGRAMMABLE CURRENT LIMIT • LOW BIAS CURRENT — FET Input
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PA88A
100mA
100mA.
PA88U
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Untitled
Abstract: No abstract text available
Text: • PA88A PA88PA88 • PA88A PA88, PA88A High Voltage Power Operational Amplifiers FEATURES • HIGH VOLTAGE — 450V ±225V • LOW QUIESCENT CURRENT — 2mA • HIGH OUTPUT CURRENT — 100mA • PROGRAMMABLE CURRENT LIMIT • LOW BIAS CURRENT — FET Input
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PA88A
PA88A
100mA
100mA.
PA88U
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2N4416A
Abstract: CMPF4416A CP210
Text: PROCESS CP210 Central Small Signal Transistors TM Semiconductor Corp. N - Channel Silicon Amplifer J FET Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 15 x 15 MILS Die Thickness 8.0 MILS Drain Bonding Pad Area 3.2 X 4.0 MILS Source Bonding Pad Area
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CP210
2N4416A
CMPF4416A
100mV
2N4416A
CMPF4416A
CP210
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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OCR Scan
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K28742
44449SILXHX
e304 fet
JFET TRANSISTOR REPLACEMENT GUIDE j201
bfq13
e420 dual jfet
JFET TIS88
Siliconix FET Design Catalog
E112 jfet
jfet e300
BFW10 JFET
2N3686
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Untitled
Abstract: No abstract text available
Text: PA88PA88 • PA88A • PA88A PA88, PA88A High Voltage Power Operational Amplifiers FEATURES • • • • • HIGH VOLTAGE — 450V ±225V LOW QUIESCENT CURRENT — 2mA HIGH OUTPUT CURRENT — 100mA PROGRAMMABLE CURRENT LIMIT LOW BIAS CURRENT — FET Input
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PA88A
100mA
100mA.
PA88U
PA88U
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cascode mosfet current mirror
Abstract: No abstract text available
Text: PA88PA88 • PA88A • PA88A PA88, PA88A High Voltage Power Operational Amplifiers FEATURES • HIGH VOLTAGE — 450V ±225V • LOW QUIESCENT CURRENT — 2mA • HIGH OUTPUT CURRENT — 100mA • PROGRAMMABLE CURRENT LIMIT • LOW BIAS CURRENT — FET Input
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PA88A
PA88A
100mA
100mA.
PA88U
PA88U
cascode mosfet current mirror
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siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
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OCR Scan
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J-23548
K24123
i39-40i
NZ3766
53-C-03
siliconix fet
Transistor E112 FET N-Channel
JFET TRANSISTOR REPLACEMENT GUIDE j201
E112 jfet
jfet bfw10 terminals
JFET BFW10 SPECIFICATIONS
4856a mosfet
Transistor E112 FET
FETs in Balanced Mixers Ed Oxner
equivalent components FET BFW10
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