MARKING code VO SMD fet
Abstract: marking cdm smd 2a 3 PIN fet FET Design Catalog
Text: INTEGRATED CIRCUITS CBT3125 Quadruple FET bus switch Product data File under Integrated Circuits — ICL03 Philips Semiconductors 2001 Dec 12 Philips Semiconductors Product data Quadruple FET bus switch CBT3125 DESCRIPTION PIN CONFIGURATION The CBT3125 quadruple FET bus switch features independent line
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CBT3125
ICL03
CBT3125
125-type
JESD78
SA00562
08-Jan-03)
MARKING code VO SMD fet
marking cdm
smd 2a 3 PIN fet
FET Design Catalog
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XP131A0232SR
Abstract: No abstract text available
Text: Power MOS FET ◆N-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance: 0.032Ω max ●Cellular and portable phones ●On-board power supplies ◆Ultra High-Speed Switching ●Li-ion battery systems ◆SOP-8 Package
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XP131A0232SR
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low noise, hetero junction fet
Abstract: NE325S01 NEC Ga FET marking L C10535E NE325S01-T1 NE325S01-T1B TRANSISTOR 318 NEC Ga FET marking A ne325
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE325S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent
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NE325S01
NE325S01
NE325S01-T1B
NE325S01-T1
low noise, hetero junction fet
NEC Ga FET marking L
C10535E
NE325S01-T1
NE325S01-T1B
TRANSISTOR 318
NEC Ga FET marking A
ne325
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Untitled
Abstract: No abstract text available
Text: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for
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FLK017XP
FLK017XP
15hods
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Untitled
Abstract: No abstract text available
Text: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for
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FLK017XP
FLK017XP
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FLK017XP
Abstract: GaAs FET HEMT Chips
Text: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for
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FLK017XP
FLK017XP
FCSI0598M200
GaAs FET HEMT Chips
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108 to 174 mhz
Abstract: FLK027XP FLK027XV
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
FCSI0598M200
108 to 174 mhz
FLK027XP
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NE42484C
Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE42484C
NE42484C
NE42484C-SL
2608 surface mount transistor
NE42484C-T1
Ga FET marking k
C band FET transistor s-parameters
L to Ku BAND LOW NOISE AMPLIFIER
NEC Ga FET marking C
1S1220
THE TRANSISTOR MANUAL (JAPANESE) 1993
nec gaas fet marking
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Untitled
Abstract: No abstract text available
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
FCSI0598M200
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FLK027XP
Abstract: GaAs FET HEMT Chips FLK027XV
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
FLK027XP
FLK027XP
GaAs FET HEMT Chips
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transistor ne425s01
Abstract: NEC Ga FET marking L C10535E NE425S01 NE425S01-T1 NE425S01-T1B NEC Ga FET marking C
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent
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NE425S01
NE425S01
NE425S01-T1B
NE425S01-T1
transistor ne425s01
NEC Ga FET marking L
C10535E
NE425S01-T1
NE425S01-T1B
NEC Ga FET marking C
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Untitled
Abstract: No abstract text available
Text: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for
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FLK017XP
FLK017XP
FCSI0598M200
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1278n
Abstract: No abstract text available
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
1278n
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Untitled
Abstract: No abstract text available
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
FLK027XP
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FLK027XP
Abstract: FLK027XV
Text: FLK027XP, FLK027XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 24.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK027XP, and FLK027XV chip is a power GaAs FET that is
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FLK027XP,
FLK027XV
FLK027XV
Unit4888
FLK027XP
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BUK794R1-40BT
Abstract: 748 DIODE
Text: BUK794R1-40BT N-channel TrenchPLUS standard level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. The
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BUK794R1-40BT
BUK794R1-40BT
748 DIODE
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NE850R5
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
NE850R599
CODE-99
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63000-000
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device
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NE850R5
E850R599
CODE-99
63000-000
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hip4080aib
Abstract: No abstract text available
Text: HIP4080A PRELIM INARY 80V/2.5A Peak, High Frequency Full Bridge FET Driver December 1994 Features Description Drives N-Channel FET Full Bridge Including High Side Chop Capability The HIP4080A is a high frequency, medium voltage Full Bridge N-Channel FET driver IC, available In 20 lead plastic
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HIP4080A
HIP4080A
hip4080aib
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Untitled
Abstract: No abstract text available
Text: DOlfiQSñ p h e u 417 • MITSUBISHI SEMICONDUCTOR <GaAs FET> NUNtftf -""0 MGFK36V404S 1 4 .0 '"‘14.5G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 6 V 4 0 4 5 is an internally impedance matched GaAs power FET especially designed for use in 1 4 .0 —1 4 .5
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MGFK36V404S
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MAR 544 MOSFET TRANSISTOR
Abstract: J 6920 FET MAR 740 MOSFET TRANSISTOR LA 7814 RD70HVF 7907 mitsubishi RD70HVF1 7386 mos transistor d 2689 MOSFET 2095 transistor
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:4th/Mar/02 MITSUBISHI RF POWER MOS FET ELHTROSTATIC SENSITIVE DEVICES RD70HVF1 Silicon MOSFET Power Transistor,! 75MHz70W 520MHz50W DESCRIPTION OUTLINE DRAWING RD70HVF1 is a MOS FET type transistor specifically
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4th/Mar/02
RD70HVF1
75MHz70W
520MHz50W
RD70HVF1
175MHz
520MHz
MAR 544 MOSFET TRANSISTOR
J 6920 FET
MAR 740 MOSFET TRANSISTOR
LA 7814
RD70HVF
7907 mitsubishi
7386 mos
transistor d 2689
MOSFET 2095 transistor
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NE42484C
Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE42484C
NE42484C
42484C
E42484C-SL
NE42484C-T1
transistor NEC D 586
NEC Ga FET marking L
NE42484C-T1
28609
low noise FET NEC U
ne42484
nec gaas fet marking
NEC 2533
NEC Ga FET
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transistor NEC D 822 P
Abstract: nec gaas fet marking NEC Ga FET transistor ne425s01
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent
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NE425S01
NE425S01
NE425S01-T1
transistor NEC D 822 P
nec gaas fet marking
NEC Ga FET
transistor ne425s01
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Transistor D 1881
Abstract: No abstract text available
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent
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NE425S01
NE425S01
Transistor D 1881
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