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    FET ARRAY Search Results

    FET ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS40N120HB Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 40 A, 2 in 1, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation

    FET ARRAY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pa1556ah

    Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
    Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET


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    O-251/-252, O-220/-262 SC-96 SC-95 SC-96 OT-23) D10702EJAV0PF00 pa1556ah PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326 PDF

    hitachi fet

    Abstract: Hitachi 2SJ fet array 2SJ series
    Text: Hitachi Power MOS FET DATA BOOK No. 1 P-Channel 2SJ Series Power MOS FET Array Power MOS FET Module SOP-8 (HAT Series) HITACHI ADE-408-002E


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    ADE-408-002E hitachi fet Hitachi 2SJ fet array 2SJ series PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PHN70308 7 N-channel 30/80 mQ FET array Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification 7 N-channel 30/80 mQ FET array PHN70308 FEATURES PINNING SOT341-1 SSOP28 • 30 m£2 pass/isolation FET


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    PHN70308 PHN70308 OT341-1 SSOP28) 135002/00/01/pp5 PDF

    mu24 dc

    Abstract: SWT-2
    Text: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration


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    r88uct RFA120 mu24 dc SWT-2 PDF

    pa1520

    Abstract: PA1520BH IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET Compound Field Effect Power Transistor µPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The µPA1520B is N-channel Power MOS FET Array that PACKAGE DIMENSIONS built in 4 circuits designed for solenoid, motor and lamp in millimeters


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    PA1520B PA1520B PA1520BH pa1520 PA1520BH IEI-1213 MEI-1202 MF-1134 PDF

    PA1572

    Abstract: C10535E C10943X MEI-1202 PT2320 PA1572BH
    Text: DATA SHEET Compound Field Effect Power Transistor µPA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and


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    PA1572B PA1572B PA1572BH 10Pin PA1572 C10535E C10943X MEI-1202 PT2320 PA1572BH PDF

    a1034

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR ¿¿PA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The /¿PA1552B is N-channel Power MOS FET Array that built in 4 circuits designed, for solenoid, motor and


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    uPA1552B PA1552B PA1552BH a1034 PDF

    PA1552BH

    Abstract: PA1552 IEI-1213 MEI-1202 MF-1134 PA155
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1552B is N-channel Power MOS FET Array in millimeters that built in 4 circuits designed, for solenoid, motor and


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    PA1552B PA1552B PA1552BH PA1552BH PA1552 IEI-1213 MEI-1202 MF-1134 PA155 PDF

    Untitled

    Abstract: No abstract text available
    Text: COMPOUND FIELD EFFECT POWER TRANSISTOR PA1524 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS T h e JuPA1524isN-channel Power MOS FET Array that built in 4 in millimeters circuits designed for solenoid, motor and lamp driver.


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    PA1524 uPA1524isN-channel /IPA1524H 10-Pin PDF

    ISL97652

    Abstract: ISL97652IRZ ISL97652IRZ-T ISL97652IRZ-TK TB379 t-con tv lcd LCD TV T-con board 41 pin name
    Text: ISL97652 December 21, 2006 • AVDD boost up to 19.5V OVP threshold , with integrated 2.8APEAK FET • Overvoltage protection (OVP) • 2A integrated AVDD delay FET, with short circuit protection • Dual charge pump controllers for VON and VOFF • VLOGIC buck with integrated 2.5APEAK FET


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    ISL97652 ISL97652 650kHz FN9287 ISL97652IRZ ISL97652IRZ-T ISL97652IRZ-TK TB379 t-con tv lcd LCD TV T-con board 41 pin name PDF

    G10597

    Abstract: pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059 PA1500B
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver.


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    PA1500B PA1500B G10597 pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059 PDF

    pa1560h

    Abstract: nec pa1560h PA1560 uPA1560H PA1552
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µ PA1560 N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and


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    PA1560 PA1560 PA1560H 10-pin pa1560h nec pa1560h uPA1560H PA1552 PDF

    transistor 431A

    Abstract: transistor H 431A h a 431a transistor transistor ti p80 fet p80 10 PIN TRANSISTOR AND MOS FET ARRAY Diode S4 55a
    Text: DATA SHEET PHN70308 7 N-channel 30/80 mi FET array O bjective specification File under Discrete sem iconductors, SC13b Philips Semiconductors 1998 Aug 14 PHILIPS Objective specification Philips Sem iconductors 7 N-channel 30/80 mQ FET array FEATURES • •


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    PHN70308 SC13b OT341-1 SSOP28 transistor 431A transistor H 431A h a 431a transistor transistor ti p80 fet p80 10 PIN TRANSISTOR AND MOS FET ARRAY Diode S4 55a PDF

    G1133

    Abstract: C10535E C10943X MEI-1202 6 PIN case mos fet p-channel uPA1523BH
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1523B P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The µPA1523B is P-channel Power MOS FET Array that built PACKAGE DIMENSIONS in millimeters in 4 circuits designed for solenoid, motor and lamp driver.


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    PA1523B PA1523B PA1523BH G1133 C10535E C10943X MEI-1202 6 PIN case mos fet p-channel uPA1523BH PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET Compound Field Effect Power Transistor ,uPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The ¿¡PA1520B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp PACKAGE DIMENSIONS in millimeters


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    uPA1520B PA1520B PA1520BH PA1520B PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC Compound Field Effect Power Transistor _j PA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The ¿¡PA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, m otor and lamp driver.


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    PA1572B PA1572B uPA1572BH 10Pin I-1202 IEI-1209 10535E 10943X EI-1202 X10679E PDF

    Untitled

    Abstract: No abstract text available
    Text: COMPOUND FIELD EFFECT POWER TRANSISTOR PA1527 P-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS The ¿¿PA1527 is P-channel Power MOS FET Array that built in 4 in millim eters circuits designed for solenoid, motor and lamp driver.


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    PA1527 PA1527 /iPA1527H 10-Pin PDF

    pa1560h

    Abstract: nec pa1560h PA1560 UPA1560
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µ PA1560 N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and


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    PA1560 PA1560 PA1560H 10-ne pa1560h nec pa1560h UPA1560 PDF

    uPA1550

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND FIELD EFFECT TRANSISTOR ARRAY µPA1550 N-CHANNEL POWER MOS FET ARRAY FOR SWITCHING µPA1550 is a N-channel vertical power MOS FET and this PACKAGE DRAWING UNIT: mm switching device is available for direct drive by output of 5 V power


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    PA1550 PA1550 uPA1550 PDF

    TEA-1035

    Abstract: IC-3345 UPA1552 UPA1552H MEI-1202 nec li ion
    Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The juPA1552 is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance


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    uPA1552 PA1552H IEI-1209) TEA-1035 IC-3345 UPA1552H MEI-1202 nec li ion PDF

    PA1501h

    Abstract: nec pa1501h
    Text: N E C ,r • DATA SHEET iiPA1501 COMPOUND FIELD EFFECT POWER TRANSISTOR - A N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The /¿PA1501 is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and


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    iiPA1501 PA1501 /PA1501H PA1501h nec pa1501h PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR _ /¿PA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The ¿¡PA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, m otor and lamp driver.


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    PA1500B PA1500B PDF

    IC-3328

    Abstract: *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array
    Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS The juPA1520 is N-channel Power MOS FET Array that built in 4 in millimeters circuits designed for solenoid, m otor and lamp driver. 26.8 MAX. 4.0 FEATURES • 4 V driving is possible


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    uPA1520 10-Pin JiPA1520H IC-3328 *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array PDF

    C10535E

    Abstract: MEI-1202 PA672T FET MARKING
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA672T N-CHANNEL MOS FET ARRAY FOR SWITCHING The µPA672T is a super-mini-mold device provided PACKAGE DIMENSIONS in millimeters with two MOS FET elements. It achieves high-density +0.1 0.2 –0 mounting and saves mounting costs.


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    PA672T PA672T SC-70 C10535E MEI-1202 FET MARKING PDF