pa1556ah
Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET
|
Original
|
O-251/-252,
O-220/-262
SC-96
SC-95
SC-96
OT-23)
D10702EJAV0PF00
pa1556ah
PA1501H
nec PA1501H
PA1556A
PA1550H
PA1556
PA1522H
uPA1712
pa1560h
2sk3326
|
PDF
|
hitachi fet
Abstract: Hitachi 2SJ fet array 2SJ series
Text: Hitachi Power MOS FET DATA BOOK No. 1 P-Channel 2SJ Series Power MOS FET Array Power MOS FET Module SOP-8 (HAT Series) HITACHI ADE-408-002E
|
OCR Scan
|
ADE-408-002E
hitachi fet
Hitachi 2SJ
fet array
2SJ series
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PHN70308 7 N-channel 30/80 mQ FET array Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification 7 N-channel 30/80 mQ FET array PHN70308 FEATURES PINNING SOT341-1 SSOP28 • 30 m£2 pass/isolation FET
|
OCR Scan
|
PHN70308
PHN70308
OT341-1
SSOP28)
135002/00/01/pp5
|
PDF
|
mu24 dc
Abstract: SWT-2
Text: APR F*r88uct Specifications Linear Integrated RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features • ■ ■ ■ ■ 8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration
|
OCR Scan
|
r88uct
RFA120
mu24 dc
SWT-2
|
PDF
|
pa1520
Abstract: PA1520BH IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET Compound Field Effect Power Transistor µPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The µPA1520B is N-channel Power MOS FET Array that PACKAGE DIMENSIONS built in 4 circuits designed for solenoid, motor and lamp in millimeters
|
Original
|
PA1520B
PA1520B
PA1520BH
pa1520
PA1520BH
IEI-1213
MEI-1202
MF-1134
|
PDF
|
PA1572
Abstract: C10535E C10943X MEI-1202 PT2320 PA1572BH
Text: DATA SHEET Compound Field Effect Power Transistor µPA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and
|
Original
|
PA1572B
PA1572B
PA1572BH
10Pin
PA1572
C10535E
C10943X
MEI-1202
PT2320
PA1572BH
|
PDF
|
a1034
Abstract: No abstract text available
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR ¿¿PA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The /¿PA1552B is N-channel Power MOS FET Array that built in 4 circuits designed, for solenoid, motor and
|
OCR Scan
|
uPA1552B
PA1552B
PA1552BH
a1034
|
PDF
|
PA1552BH
Abstract: PA1552 IEI-1213 MEI-1202 MF-1134 PA155
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1552B is N-channel Power MOS FET Array in millimeters that built in 4 circuits designed, for solenoid, motor and
|
Original
|
PA1552B
PA1552B
PA1552BH
PA1552BH
PA1552
IEI-1213
MEI-1202
MF-1134
PA155
|
PDF
|
Untitled
Abstract: No abstract text available
Text: COMPOUND FIELD EFFECT POWER TRANSISTOR PA1524 N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS T h e JuPA1524isN-channel Power MOS FET Array that built in 4 in millimeters circuits designed for solenoid, motor and lamp driver.
|
OCR Scan
|
PA1524
uPA1524isN-channel
/IPA1524H
10-Pin
|
PDF
|
ISL97652
Abstract: ISL97652IRZ ISL97652IRZ-T ISL97652IRZ-TK TB379 t-con tv lcd LCD TV T-con board 41 pin name
Text: ISL97652 December 21, 2006 • AVDD boost up to 19.5V OVP threshold , with integrated 2.8APEAK FET • Overvoltage protection (OVP) • 2A integrated AVDD delay FET, with short circuit protection • Dual charge pump controllers for VON and VOFF • VLOGIC buck with integrated 2.5APEAK FET
|
Original
|
ISL97652
ISL97652
650kHz
FN9287
ISL97652IRZ
ISL97652IRZ-T
ISL97652IRZ-TK
TB379
t-con tv lcd
LCD TV T-con board 41 pin name
|
PDF
|
G10597
Abstract: pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059 PA1500B
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver.
|
Original
|
PA1500B
PA1500B
G10597
pa1500bh
uPA1500
IEI-1213
MEI-1202
MF-1134
G-1059
|
PDF
|
pa1560h
Abstract: nec pa1560h PA1560 uPA1560H PA1552
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µ PA1560 N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and
|
Original
|
PA1560
PA1560
PA1560H
10-pin
pa1560h
nec pa1560h
uPA1560H
PA1552
|
PDF
|
transistor 431A
Abstract: transistor H 431A h a 431a transistor transistor ti p80 fet p80 10 PIN TRANSISTOR AND MOS FET ARRAY Diode S4 55a
Text: DATA SHEET PHN70308 7 N-channel 30/80 mi FET array O bjective specification File under Discrete sem iconductors, SC13b Philips Semiconductors 1998 Aug 14 PHILIPS Objective specification Philips Sem iconductors 7 N-channel 30/80 mQ FET array FEATURES • •
|
OCR Scan
|
PHN70308
SC13b
OT341-1
SSOP28
transistor 431A
transistor H 431A
h a 431a transistor
transistor ti p80
fet p80
10 PIN TRANSISTOR AND MOS FET ARRAY
Diode S4 55a
|
PDF
|
G1133
Abstract: C10535E C10943X MEI-1202 6 PIN case mos fet p-channel uPA1523BH
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1523B P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The µPA1523B is P-channel Power MOS FET Array that built PACKAGE DIMENSIONS in millimeters in 4 circuits designed for solenoid, motor and lamp driver.
|
Original
|
PA1523B
PA1523B
PA1523BH
G1133
C10535E
C10943X
MEI-1202
6 PIN case mos fet p-channel
uPA1523BH
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET Compound Field Effect Power Transistor ,uPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The ¿¡PA1520B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp PACKAGE DIMENSIONS in millimeters
|
OCR Scan
|
uPA1520B
PA1520B
PA1520BH
PA1520B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC Compound Field Effect Power Transistor _j PA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The ¿¡PA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, m otor and lamp driver.
|
OCR Scan
|
PA1572B
PA1572B
uPA1572BH
10Pin
I-1202
IEI-1209
10535E
10943X
EI-1202
X10679E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: COMPOUND FIELD EFFECT POWER TRANSISTOR PA1527 P-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS The ¿¿PA1527 is P-channel Power MOS FET Array that built in 4 in millim eters circuits designed for solenoid, motor and lamp driver.
|
OCR Scan
|
PA1527
PA1527
/iPA1527H
10-Pin
|
PDF
|
pa1560h
Abstract: nec pa1560h PA1560 UPA1560
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µ PA1560 N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1560 is N-Channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and
|
Original
|
PA1560
PA1560
PA1560H
10-ne
pa1560h
nec pa1560h
UPA1560
|
PDF
|
uPA1550
Abstract: No abstract text available
Text: DATA SHEET COMPOUND FIELD EFFECT TRANSISTOR ARRAY µPA1550 N-CHANNEL POWER MOS FET ARRAY FOR SWITCHING µPA1550 is a N-channel vertical power MOS FET and this PACKAGE DRAWING UNIT: mm switching device is available for direct drive by output of 5 V power
|
Original
|
PA1550
PA1550
uPA1550
|
PDF
|
TEA-1035
Abstract: IC-3345 UPA1552 UPA1552H MEI-1202 nec li ion
Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The juPA1552 is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance
|
OCR Scan
|
uPA1552
PA1552H
IEI-1209)
TEA-1035
IC-3345
UPA1552H
MEI-1202
nec li ion
|
PDF
|
PA1501h
Abstract: nec pa1501h
Text: N E C ,r • DATA SHEET iiPA1501 COMPOUND FIELD EFFECT POWER TRANSISTOR - A N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION The /¿PA1501 is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and
|
OCR Scan
|
iiPA1501
PA1501
/PA1501H
PA1501h
nec pa1501h
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR _ /¿PA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The ¿¡PA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, m otor and lamp driver.
|
OCR Scan
|
PA1500B
PA1500B
|
PDF
|
IC-3328
Abstract: *PA1520H JUPA1520 MEI-1202 TEB-1035 MOS FET Array
Text: N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION PACKAGE DIMENSIONS The juPA1520 is N-channel Power MOS FET Array that built in 4 in millimeters circuits designed for solenoid, m otor and lamp driver. 26.8 MAX. 4.0 FEATURES • 4 V driving is possible
|
OCR Scan
|
uPA1520
10-Pin
JiPA1520H
IC-3328
*PA1520H
JUPA1520
MEI-1202
TEB-1035
MOS FET Array
|
PDF
|
C10535E
Abstract: MEI-1202 PA672T FET MARKING
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA672T N-CHANNEL MOS FET ARRAY FOR SWITCHING The µPA672T is a super-mini-mold device provided PACKAGE DIMENSIONS in millimeters with two MOS FET elements. It achieves high-density +0.1 0.2 –0 mounting and saves mounting costs.
|
Original
|
PA672T
PA672T
SC-70
C10535E
MEI-1202
FET MARKING
|
PDF
|