pa1556ah
Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET
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O-251/-252,
O-220/-262
SC-96
SC-95
SC-96
OT-23)
D10702EJAV0PF00
pa1556ah
PA1501H
nec PA1501H
PA1556A
PA1550H
PA1556
PA1522H
uPA1712
pa1560h
2sk3326
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Pch MOS FET
Abstract: US6M2 TUMT6
Text: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.
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85Max.
15Max.
Pch MOS FET
US6M2
TUMT6
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QS6M4
Abstract: TSMT6 Pch MOS FET m04 fet
Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.
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2SK1078
Abstract: 1SS184 SSOP24 TD62M4503AFN
Text: TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x 4 and Diodes (1SS184). FEATURES 4V Drive Low ON Resistance : RDS (ON) = 0.58 Ω (Typ.)
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TD62M4503AFN
TD62M4503AFN
2SK1078)
1SS184)
2SK1078
1SS184
SSOP24
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Untitled
Abstract: No abstract text available
Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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QS5U27
Abstract: IR 240 FET
Text: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a
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QS5U27
QS5U27
IR 240 FET
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QS6U24
Abstract: No abstract text available
Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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Untitled
Abstract: No abstract text available
Text: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U23 combines Pch MOS FET with a
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QS5U23
QS5U23
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QS5U23
Abstract: ONM10
Text: QS5U23 Transistor 2.5V Drive Pch+SBD MOS FET QS5U23 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U23 combines Pch MOS FET with a
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QS5U23
QS5U23
ONM10
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Untitled
Abstract: No abstract text available
Text: QS5U28 QS5U28 Transistor 2.5V Drive Pch+SBD MOS FET QS5U28 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U28 combines Pch MOS FET with
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QS5U28
QS5U28
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Untitled
Abstract: No abstract text available
Text: QS6U24 Transistor 4V Drive Pch+SBD MOS FET QS6U24 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package.
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QS6U24
QS6U24
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QS5U27
Abstract: No abstract text available
Text: QS5U27 Transistor 2.5V Drive Pch+SBD MOS FET QS5U27 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TSMT5 1.0MAX 2.9 1.9 0.95 0.95 (5) (4) (2) (3) 0.7 1.6 2.8 zFeatures 1) The QS5U27 combines Pch MOS FET with a
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QS5U27
QS5U27
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Untitled
Abstract: No abstract text available
Text: Data Sheet RAJ20660AGNP R07DS1071EJ0100 Rev.1.00 May 22, 2013 Integrated Driver - MOS FET DrMOS Description The RAJ20660AGNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver,
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RAJ20660AGNP
R07DS1071EJ0100
RAJ20660AGNP
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet R2J20654NP R07DS0246EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20654NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20654NP
R07DS0246EJ0100
R2J20654NP
w9044
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R2J20651ANP
Abstract: Nippon capacitors
Text: Preliminary R2J20651ANP Integrated Driver – MOS FET DrMOS REJ03G1792-0101 Rev.1.01 Aug 19, 2009 Description The R2J20651ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20651ANP
REJ03G1792-0101
R2J20651ANP
Nippon capacitors
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Nippon capacitors
Abstract: No abstract text available
Text: R2J20651NP Integrated Driver – MOS FET DrMOS REJ03G1743-0300 Preliminary Rev.3.00 Mar 25, 2009 Description The R2J20651NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20651NP
REJ03G1743-0300
R2J20651NP
Nippon capacitors
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R2J20604NP
Abstract: Nippon capacitors
Text: R2J20604NP Integrated Driver – MOS FET DrMOS REJ03G1605-0300 Rev.3.00 Feb 09, 2009 Description The R2J20604NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20604NP
REJ03G1605-0300
R2J20604NP
Nippon capacitors
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renesas pwm
Abstract: QFN56 Datasheet R2J20601NP intel drMOS compliant QFN56 PT-100 resistance charts R2J20601
Text: R2J20601NP Driver – MOS FET Integrated SiP DrMOS REJ03G0237-0700 Rev.7.00 Jun 30, 2008 Description The R2J20601NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20601NP
REJ03G0237-0700
R2J20601NP
renesas pwm
QFN56 Datasheet
intel drMOS compliant
QFN56
PT-100 resistance charts
R2J20601
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QFN56 Datasheet
Abstract: QFN56 R2J20602NP intel drMOS compliant ic tab 810 Nippon capacitors
Text: R2J20602NP Integrated Driver – MOS FET DrMOS REJ03G1480-0300 Rev.3.00 Jun 30, 2008 Description The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20602NP
REJ03G1480-0300
R2J20602NP
QFN56 Datasheet
QFN56
intel drMOS compliant
ic tab 810
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet R2J20656ANP R07DS0201EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20656ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20656ANP
R07DS0201EJ0100
R2J20656ANP
Low-si9044
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Nippon capacitors
Abstract: No abstract text available
Text: R2J20604NP Integrated Driver – MOS FET DrMOS REJ03G1605-0100 Preliminary Rev.1.00 Nov 30, 2007 Description The R2J20604NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20604NP
REJ03G1605-0100
R2J20604NP
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: R2J20601NP Driver – MOS FET Integrated SiP DrMOS REJ03G0237-0200 Rev.2.00 Oct 12, 2004 Description The R2J20601NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20601NP
REJ03G0237-0200
R2J20601NP
Unit2607
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QFN56 Datasheet
Abstract: QFN56 R2J20602NP QFN56 footprint Nippon capacitors
Text: R2J20602NP Integrated Driver – MOS FET DrMOS REJ03G1480-0200 Preliminary Rev.2.00 Nov 30, 2007 Description The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
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R2J20602NP
REJ03G1480-0200
R2J20602NP
QFN56 Datasheet
QFN56
QFN56 footprint
Nippon capacitors
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FET differential amplifier circuit
Abstract: fet differential amplifier schematic DC bias of gaas FET
Text: æ Agom Application Note Æ a n A M P com pany Suggested Circuit Controller for a Dual-Control FET VVA in AGC Temperature Compensationt M524 Experimental Series FET — O— Experimental (Shunt FET) - A - •Calc (Series FET) — □ — Calc (Shunt FET)
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OCR Scan
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