BF996S
Abstract: marking code cig dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF996S
OT143
R77/02/pp8
BF996S
marking code cig
dual-gate
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BF992
Abstract: bf992 application Silicon N-Channel Dual Gate MOS-FET
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BF992 Silicon N-channel dual gate MOS-FET Product specification Supersedes data of 1996 Jul 30 1999 Aug 11 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET APPLICATIONS BF992 PINNING
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M3D071
BF992
OT143B
125004/03/pp12
BF992
bf992 application
Silicon N-Channel Dual Gate MOS-FET
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Sony 104A
Abstract: No abstract text available
Text: SGM2014M] SONY. GaAs N-channel Dual Gate MES FET Description Package Outline The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable lor a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.
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SGM2014M]
SGM2014M
900MHz
at900MHz
OT-143
M-254
Sony 104A
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BF997
Abstract: Dual-Gate Mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF997
OT143
BF997
Dual-Gate Mosfet
dual-gate
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BF990A
Abstract: mosfet handbook Dual-Gate Mosfet philips mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF990A
OT143
BF990A
mosfet handbook
Dual-Gate Mosfet
philips mosfet
dual-gate
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BF989
Abstract: Dual-Gate Mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF989
OT143
BF989
Dual-Gate Mosfet
dual-gate
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BF989
Abstract: MOSFET 4466 BP317 SCA52 dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF989
OT143
SCA52
117061/00/02/pp8
BF989
MOSFET 4466
BP317
SCA52
dual-gate
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PDF
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BF990A
Abstract: PHILIPS MOSFET MARKING 4814 mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF990A
OT143
SCA52
117061/00/02/pp8
BF990A
PHILIPS MOSFET MARKING
4814 mosfet
dual-gate
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BF997
Abstract: Philips MKP dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF997
OT143
BF997
Philips MKP
dual-gate
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transistor SOT103
Abstract: BF991 Dual-Gate Mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF991 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF991
OT143
transistor SOT103
BF991
Dual-Gate Mosfet
dual-gate
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BF994S marking code
Abstract: FET MARKING CODE Marking G2 BF994S sot143 marking code G2 Dual-Gate Mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF994S
OT143
BF994S marking code
FET MARKING CODE
Marking G2
BF994S
sot143 marking code G2
Dual-Gate Mosfet
dual-gate
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PDF
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BF991
Abstract: fet MARKING g2 Marking G2 SOT-103 dual-gate sot103 transistor SOT103 mosfet
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF991 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF991
OT143
BF991
fet MARKING g2
Marking G2
SOT-103
dual-gate
sot103
transistor SOT103 mosfet
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF996S
OT143
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marking code cig
Abstract: fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by
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BF996S
OT143
marking code cig
fet dual gate sot143
Dual-Gate Mosfet
BF996S
dual-gate
p 1S marking SOT143
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates
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BF996S
OT143
R77/02/pp8
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BF994S
Abstract: dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification July 1993 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION • Protected against excessive input voltage surges by integrated back-to-back diodes between gates
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BF994S
OT143
R77/02/pp8
BF994S
dual-gate
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fet dual gate sot143
Abstract: SGM2014M
Text: SGM2014M SONY, GaAs N-channel Dual Gate MES FET_ hor the availability of this product, please contact the sales officir] Description Package Outline Unit : mm The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is
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SGM2014M
SGM2014M
900MHz
Ga-18dB
OT-143
-64l0Â
fet dual gate sot143
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MRF966
Abstract: MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R
Text: Order this document by MRFG9661/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9661 MRFG9661R Advance Information The RF Line N-Channel Dual-Gate GaAs Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion m ode dual-gate M E S FET designed for high frequency amplifier
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MRFG9661/D
MRFG9661/9661R
MRFG9661/D
MRF966
MRF9661
HP8970A
HP11590B
mrf9661 motorola
TRANSISTOR 318a
Eaton 2075
TRANSISTOR MPS A72
2f 1001
MRFG9661R
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motorola 304
Abstract: MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075
Text: Order this document by MRFG9801/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9801 MRFG9801R Advance Information The RF Line N-Channel Dual-Gate G a A s Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion mode dual-gate MES FET designed for high frequency amplifier
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MRFG9801/D
MRFG9801/9801R
MRFG9801/D
motorola 304
MRFG9801
MRFG9801R
hp89
HP8970A
dual-gate
K31S
HP11590B
Eaton 2075
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BF908R
Abstract: BF908 URC276 MRC280 BH rn transistor
Text: ' m bbSBTBl 005355b 141 • APX Philips Semiconductors Product specification N AUER PHILIPS/DISCRETE fa?E D Dual gate MOS-FETs BF908; BF908R FEATURES QUICK REFERENCE DATA • High IY„I dual gate MOS-FET SYMBOL ■ Short channel transistor with high IYfcl : C „ ratio
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005355b
BF908;
BF908R
OT143
OT143R
CAU01
BF908R
BF908
URC276
MRC280
BH rn transistor
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Untitled
Abstract: No abstract text available
Text: • 7110öEb D0bfi7QS m s ■PHIN BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S0T143 microminiature envelope with source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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BF991
S0T143
SQT103
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Marking G1s
Abstract: No abstract text available
Text: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF
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bbS3131
BF992R
OT143R
Marking G1s
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Untitled
Abstract: No abstract text available
Text: • APX bbSBTBl QD2M73D bT4 N AMER PHILIPS/DISCRETE BF989 b7E D J K. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television
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QD2M73D
BF989
OT143
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Untitled
Abstract: No abstract text available
Text: ' • bbS3^31 002355b 141 ■ APX Philips Semiconductors Product specification N AHER P H IL IP S /D IS C R E T E b?E D Dual gate MOS-FETs — BF908; BF908R QUICK REFERENCE DATA FEATURES SYMBOL • High IY„I dual gate MOS-FET • Short channel transistor with high
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002355b
BF908;
BF908R
OT143
OT143R
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