FE42-0001
Abstract: SVC6310
Text: GaAs Foundry Services PROCESS HI2 HI2 V2.00 Features • Typical RF Performance 0.5 µm MESFET Technology for High Gain/Low Noise Applications MMICs up to 20 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging
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50IDSS
12/18GHz
25IDSS
25GHz
300um
FE42-0001
SVC6310
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MS2532
Abstract: 15544 FE43-0001 tv lg 37 datasheet FC06 SVC6310 MESFET MULTIWATT die
Text: GaAs Foundry Services PROCESS PE3 PE3 V2.00 Features • Typical RF Performance 0.5 µm MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging •
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6X150)
40IDSS
2/12GHz
680/525mW/mm
20GHz
MS2532
15544
FE43-0001
tv lg 37 datasheet
FC06
SVC6310
MESFET
MULTIWATT die
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diode BB102
Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003G
diode BB102
RF TRANSISTOR 10GHZ low noise
Tv tuner Diagram LG RF
VCO 9GHZ 10GHZ
Transistor GaAs FET Low Noise NF 1.6dB
2SC4784F
ultra high frequency FETs or transistors
A08 smd transistor
lg tv electronic diagram
SMD TRANSISTOR fet
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3SK238
Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003E
3SK238
g1 smd transistor
small signal audio FET
BB303
smd transistor g1
SMD Transistor 070 R
hitachi all fet audio application
hitachi DISCRETE DUAL fet
dual transistor 6 pin SMD 327
Hitachi 2SJ
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HITACHI SMD TRANSISTORS
Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,
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ADE-A08-003E
HITACHI SMD TRANSISTORS
small signal audio FET
hitachi small signal
Tv tuner Diagram LG RF
nf transistor array
g1 smd TRANSISTOR
BB304
3SK238
BB405 equivalent
smd 015
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PDF
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fet amplifier schematic
Abstract: high end amplifier schematics TL74 of 3842 c cor hybrid amplifier modules MITSUBISHI Microwave TL71 high power fet amplifier schematic TL78 mitsubishi gaAs 1998
Text: Design and Performance of a 1.6-2.2 GHz Low-Noise, High Gain Dual Amplifier in GaAs E-pHEMT White Paper Abstract — The design and realization of a dual lownoise amplifier LNA module in the 2 GHz band suitable for balanced receiver front-end application
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XC1900E-03
AV01-0258EN
fet amplifier schematic
high end amplifier schematics
TL74
of 3842
c cor hybrid amplifier modules
MITSUBISHI Microwave
TL71
high power fet amplifier schematic
TL78
mitsubishi gaAs 1998
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Prospects for a BiCFET III-V HBT Process
Abstract: kopin
Text: Prospects for a BiCFET III-V HBT Process Peter J Zampardi, Mike Sun, Cristian Cismaru, and Jiang Li Abstract—While complementary FETs are routinely available in BiCMOS processes, the successful integration of HBTs with complementary FETs has not been reported. In this work, we
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40-Gbit/s-class
Prospects for a BiCFET III-V HBT Process
kopin
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HAT1058C
Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,
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notic50
SON3024-8
HAT1062G
ADE-A08-003Q
HAT1058C
HAT2106G
HAT1068C
Hitachi MOSFET
HAT3016G
H5P0201MF
BB304M
FU 3024
wba sot23
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PDF
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fet ft 20 GHZ
Abstract: SMG50 fet probe service manual
Text: 1.5 GHz Active Probe TAP1500 Data Sheet Easy to Use Connects Directly to DPO7000 and DPO/MSO4000 Series Oscilloscopes Using the TekVPI Probe Interface Provides Automatic Units Scaling and Readout on the Oscilloscope Display Easy Access to Oscilloscope Probe Menu Display for Probe
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TAP1500
DPO7000
DPO/MSO4000
1W-19043-2
fet ft 20 GHZ
SMG50
fet probe service manual
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Untitled
Abstract: No abstract text available
Text: GaAs Foundry Services PROCESS PE3 PE3 V2.00 Features • Typical RF Performance FC06 6X150 900 um FET 0.5 |im MBE MESFET Technology for High Power Applications MMICs up to 18 GHz 100 mm wafer diameter Layout and design assistance Space qualification Custom test and packaging
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OCR Scan
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6X150)
2/12GHZ
2/12GHZ
680/525mW/mm
20GHz
900um
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PDF
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Untitled
Abstract: No abstract text available
Text: MwT-0206S-9P2/0206Z-9P2 2.0-6.0 GHz BALANCED AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4268 Solar W ay Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TYPICAL SPECIFICATIONS @ 25°C • 11.0 dB SMALL SIGNAL GAIN • +37 dBm IP3 • 26.0 dBm P-1dB • 4.0 dB NOISE FIGURE
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MwT-0206S-9P2/0206Z-9P2
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PDF
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AWS01
Abstract: aft-186
Text: What mL'HÆ HEWLETT PACKARD Avantek Products General Purpose GaAs FET Amplifier Series 6 to 18 GHz Technical Data AFT 186 X XX U S eries F eatu res D escription Pin C onfiguration • L ow C o st The AFT 186 X XX U product series offers the system designer
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MGFS52B2122
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS52B2122 ft 8«^ 2.1 - 2.2 GHz BAND 160W GaAs FET DESCRIPTION o u t l in e The MGFS52B2122 is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MQFS52B2122
12GHz
MGFS52B2122
GF-49
12GHz
May-01
MGFS52B2122
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PDF
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AF002C1-32
Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Text: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:
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AF002C1-32
AF002C1-32
AF002C1-39
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
E 212 fet
AS006M2-10
AD004T2-00
AD004T2-11
AK006R2-01
AS006M1-01
S443
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PDF
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET 3 Bit Digital Attenuator 4,8,16 dB Bits DC-t GHz EHAIpha AT001D3—11 Features • Designed for Military Applications ■ 8 Lead Metal Surface Mount Package ■ Low DC Power Consumption ■ Meets MIL-STD-883 Screening Requirements Description
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AT001D3--1
MIL-STD-883
AT001D3-11
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transistor C5080
Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295
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3SK228
3SK239A
3SK309
3SK186
3SK295
3SK194
BB101M
BB101C
3SK296
2SC2732
transistor C5080
transistor 2SC458
C5247
Transistor 2SA 2SB 2SC 2SD
transistor 2sc1515
2SC1755A
transistor f 20 nf
C5246
A1052
C4965
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fet ft 25 GHZ
Abstract: No abstract text available
Text: GaAs MMIC FET 4 Bit Digital Attenuator 2,4,8,16 dB Bits DC-1 GHz AT001D4-31 Features • Designed for Military Applications ■ Low DC Power Consumption ■ 14 Lead Metal Surface Mount Package ■ Meets M IL -S T D -883 Screening Requirements 2 dB J1 Description
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AT001D4-31
AT001D4-31
fet ft 25 GHZ
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FK 38V2228 1 2 .2 — 12.8G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F K 3 8 V 2 2 2 8 is an internally impedance matched GaAs power F E T especially designed for use in 12.2 ~ 12.8 GHz band amplifiers. The hermetically sealed metal-ceramic
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38V2228
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PDF
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IM-5964-3
Abstract: IM5964-3 5964 fet IM5964-6 IM-5964-6 Avantek Avantek, Inc IM5964 IM-5964-3/-6
Text: AVANTEK ObE INC 0A V A N TEK D | DOObOEO fl | T-39-05 IM-5964-3/-6 3 & 6 Watt, 5.9-6.4 GHz Internally Matched Power GaAs FET Features • • • • • • u m it t Avantek IMFET Package 5.9-6.4 GHz Minimum Bandwidth Internally Matched Input/Output Impedance
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IM-5964-3/-6
T-39-05
IM-5964-3
IM-5964-6
IM5964-3
5964 fet
IM5964-6
Avantek
Avantek, Inc
IM5964
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PDF
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siemens gaas fet
Abstract: TMS 1600 marking S221
Text: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,
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Q62702-L96
siemens gaas fet
TMS 1600
marking S221
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PDF
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GRH111
Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS52BN2122Ã
MGFS52BN2122A
17GHz
GF-49
14GHz
GR708â
GR40-1000
GRH111
GRH111-0
GRH111-27
GRH111-1
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PDF
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Untitled
Abstract: No abstract text available
Text: HE WLE TT-PACKARD/ CMPNTS blE D HEW LETT PACKARD • 4447304 OQDTflTb “Ì7S * H P A ATF-13170 2-16 GHz Low Noise Gallium Arsenide FET 70 mil Package Features Low Noise Figure: 1.0 dB typical at 12 GHz High Associated Gain: 10.0 dB typical at 12 GHz High Output Power: 17.5 dBm typical Pi <ib
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ATF-13170
ATF-13170
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PDF
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Avantek S
Abstract: S717 IM-4450-3 im4450-6 Avantek F4-450
Text: AVANTEK IN C Ot>E D | i m i l f c i b AVANTEK 1M-4450-3/-6 3 & 6 Watt, 3.7-4.2 GHz Internally Matched Power GaAs FET T-39-05 Avantek IMFET Package Features • • • • • • D O O tDlb b | 4.4-5.0 GHz Minimum Bandwidth Internally Matched Input/Output Impedance
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1M-4450-3/-6
T-39-05
IM-4450-3/-6
IM-4450-3
IM-4450-6
Avantek S
S717
im4450-6
Avantek
F4-450
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PDF
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AVANTEK transistor
Abstract: ATF-13136-TR1
Text: A V A N T E K INC EOE D AVANTEK i m m 0GQb54b 2 ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET "T -^ -Z S Features Avantek 36 mlcro-X Package1 • Low Noise Figure: 1.2 dB typical at 12 GHz • High Associated Gain: 9.5 dB typical at 12 GHz • High Output Power: 17.5 dBm typical Pi dB
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0GQb54b
ATF-13136
AVANTEK transistor
ATF-13136-TR1
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