SLA5054
Abstract: No abstract text available
Text: SLA5054 N-channel General purpose Absolute maximum ratings External dimensions A Unit 3 V V A A W W °C/W °C/W Vrms °C °C 6 8 10 12 14 FET-1 FET-1 FET-2 FET-2 FET-3 FET-3 2 5 7 9 11 13 1 15 Pin 4: NC Electrical characteristics Ta=25°C FET1 Symbol V(BR)DSS
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SLA5054
SLA5054
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TC-2303
Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085
Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its
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NE76184A
NE76184A
NE76184A-SL
NE76184A-T1
NE76184A-T1A
TC-2303
NEC 3377
transistor NEC D 582
transistor NEC D 587
NE76184A-SL
NE76184A-T1
NE76184A-T1A
p1085
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XP134A11A1SR
Abstract: No abstract text available
Text: XP134A11A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A11A1SR is a P-Channel Power MOS FET with low on-state
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XP134A11A1SR
XP134A11A1SR
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XP133A0245SR
Abstract: PCB405
Text: XP133A0245SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0245SR is a N-Channel Power MOS FET with low on-state
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XP133A0245SR
XP133A0245SR
PCB405
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XP134A01A9SR
Abstract: No abstract text available
Text: XP134A01A9SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.19Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A01A9SR is a P-Channel Power MOS FET with low on-state
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XP134A01A9SR
XP134A01A9SR
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XP133A1145SR
Abstract: No abstract text available
Text: XP133A1145SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.045Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A1145SR is a N-Channel Power MOS FET with low on-state
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XP133A1145SR
XP133A1145SR
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XP133A0175SR
Abstract: No abstract text available
Text: XP133A0175SR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.075Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP133A0175SR is a N-Channel Power MOS FET with low on-state
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XP133A0175SR
XP133A0175SR
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XP134A02A1SR
Abstract: XP134A11A1SR XP134A1275SR XP135A1145SR
Text: XP134A02A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A02A1SR is a P-Channel Power MOS FET with low on-state
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XP134A02A1SR
XP134A02A1SR
Vds10V
XP134A11A1SR
XP134A1275SR
XP135A1145SR
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pin diagram of ic tl082
Abstract: l0828 tl0828 L082 TL082 OF IC TL082 tl082 equivalent ic TL082AC TL082BC TL082C
Text: UTC TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER SOP-8 DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.
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TL082
TL082
Gain-of-10
100pF
QW-R105-019
100KHZ
pin diagram of ic tl082
l0828
tl0828
L082
OF IC TL082
tl082 equivalent ic
TL082AC
TL082BC
TL082C
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L082
Abstract: pin diagram of ic tl082 IC TL082 l0828 TL082 tl082 equivalent ic OF IC TL082 QW-R105-019
Text: UTC TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER SOP-8 DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.
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TL082
TL082
QW-R105-019
L082
pin diagram of ic tl082
IC TL082
l0828
tl082 equivalent ic
OF IC TL082
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XP133A1235SR
Abstract: No abstract text available
Text: XP133A1235SR ◆ ◆ ◆ ◆ ◆ ◆ Power MOS FET N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.035Ω max Ultra High-Speed Switching SOP - 8 Package Two FET Devices built-in • General Description ■ ● ● ● ● Applications
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XP133A1235SR
XP133A1235SR
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Low Capacitance MOS FET
Abstract: XP133A1330SR XP133A
Text: XP133A1330SR ◆ ◆ ◆ ◆ ◆ ◆ Power MOS FET N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.03Ω max Ultra High-Speed Switching SOP - 8 Package Two FET Devices built-in • General Description ■ ● ● ● ● Applications Notebook PCs
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XP133A1330SR
XP133A1330SR
Low Capacitance MOS FET
XP133A
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tl082
Abstract: TL082L TL082P tl082d TL082 PIN DIAGRAM tl082 equivalent absolute maximum ratings tl082 TL082G TL082 DATA SHEET TL-082
Text: UNISONIC TECHNOLOGIES CO., LTD TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.
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TL082
TL082
TL082L
QW-R105-019
TL082L
TL082P
tl082d
TL082 PIN DIAGRAM
tl082 equivalent
absolute maximum ratings tl082
TL082G
TL082 DATA SHEET
TL-082
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XP134A1275SR
Abstract: No abstract text available
Text: XP134A1275SR ◆ ◆ ◆ ◆ ◆ ◆ Power MOS FET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.075Ω max Ultra High-Speed Switching SOP - 8 Package 2 FET Devices Built-in • General Description ■ ● ● ● ● Applications Notebook PCs
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XP134A1275SR
XP134A1275SR
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TL082
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TL082 LINEAR INTEGRATED CIRCUIT GENERAL PURPOSE DUAL J-FET OPERATIONAL AMPLIFIER DESCRIPTION The UTC TL082 is a high speed J-FET input dual operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.
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TL082
TL082
QW-R105-019
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XP151A03A7MR
Abstract: No abstract text available
Text: XP151A03A7MR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.17Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP151A03A7MR is a N-Channel Power MOS FET with low on-state
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XP151A03A7MR
OT-23
XP151A03A7MR
OT-23
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Low Capacitance MOS FET
Abstract: Low Input Capacitance MOS FET fet n-channel pin configuration Pch MOS FET XP135A1145SR P Channel Ultra Low Gate Charge
Text: XP135A1145SR Power MOS FET ◆ N-Channel/P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance : 0.045Ω max Nch 0.110Ω max (Pch) ◆ Ultra High-Speed Switching ◆ SOP - 8 Package ◆ Two FET Devices Built-in • ● ● ● ■ General Description
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XP135A1145SR
XP135A1145SR
Vds10V
Low Capacitance MOS FET
Low Input Capacitance MOS FET
fet n-channel pin configuration
Pch MOS FET
P Channel Ultra Low Gate Charge
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XP132A01A0SR
Abstract: No abstract text available
Text: XP132A01A0SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A01A0SR is a P-Channel Power MOS FET with low on-state
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XP132A01A0SR
XP132A01A0SR
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LH0022
Abstract: LH0042CD lh0052 LH0022CH LH0052H LH0042CH LH0022CD LH004 LH0042 H0052
Text: LH0022/LH0022C/LH0042/LH0042C/LH0052/LH0052C National Semiconductor LH0022/LH0022C High Performance FET Op Amp LH0042/LH0042C Low Cost FET Op Amp LH0052/LH0052C Precision FET Op Amp General Description The LH0022/LH0042/LH0052 are a family of FET input op
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022/LH0022C/LH0042/LH0042C/LH0052/LH0052C
LH0022/LH0022C
LH0042/LH0042C
LH0052/LH0052C
LH0022/LH0042/LH0052
LH0052
LH0022
LH0042
LH0042CD
LH0022CH
LH0052H
LH0042CH
LH0022CD
LH004
H0052
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LH0042CD
Abstract: LH0052CH h0042 LH0022CH LH0042CH LH0052CD electrometer LH0042 LH0052 AH0152
Text: LH0022/LH0022C/LH0042/LH0042C/LH0052/LH0052C National Jl A Semiconductor LH0022/LH0022C High Performance FET Op Amp LH0042/LH0042C Low Cost FET Op Amp LH0052/LH0052C Precision FET Op Amp General Description The LH0022/LH0042/LH0052 are a family of FET input op
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LH0022/LH0022C
LH0042/LH0042C
LH0052/LH0052C
LH0022/LH0042/LH0052
LH0052
LH0022
LH0042
-15V-Â
100pF
tl/k/5557-1!
LH0042CD
LH0052CH
h0042
LH0022CH
LH0042CH
LH0052CD
electrometer
AH0152
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SG 2368
Abstract: LS 2027 audio amp c 2688 nec LS 2027 amp
Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION N E76184A is a N-channel GaAs MES FET housed in ce ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. Its
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NE76184A
NE76184A
NE76184A-SL
NE76184A-T1
NE76184A-T1A
SG 2368
LS 2027 audio amp
c 2688 nec
LS 2027 amp
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FET differential amplifier circuit
Abstract: fet differential amplifier schematic DC bias of gaas FET
Text: æ Agom Application Note Æ a n A M P com pany Suggested Circuit Controller for a Dual-Control FET VVA in AGC Temperature Compensationt M524 Experimental Series FET — O— Experimental (Shunt FET) - A - •Calc (Series FET) — □ — Calc (Shunt FET)
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LH0062
Abstract: LH0062CD LH0062C LH0062CH ultra Low noise FET LB-17
Text: National Semiconductor LH0062C High Speed FET Op Amp GENERAL DESCRIPTION The LH0062jLH0062C is a precision, high-speed FET inpu t operational am plifier w ith more than an order of magnitude improvem ent in slew rate and bandw idth over conventional FET 1C op amps. In
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LH0062C
LH0062/LH0062C
LH0062CH
LH0062CD
345MA
34505X
LH0062
ultra Low noise FET
LB-17
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teledyne philbrick 1020
Abstract: 1421 op TELEDYNE PHILBRICK teledyne 1424 teledyne 1421
Text: 1421 1424 1425 1426 •WTELECYNE PHILBRICK FET Input High Performance Monolithic Op Amps The 1421, 1424, 1425 and 1426 comprise a group of general purpose, 741 pin-compatible FET op amps with specifications approaching low drift FET modules such as the 1020. For all but the 1424, typical low
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74Jechanical
teledyne philbrick 1020
1421 op
TELEDYNE PHILBRICK
teledyne 1424
teledyne 1421
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