BF991
Abstract: fet MARKING g2 Marking G2 SOT-103 dual-gate sot103 transistor SOT103 mosfet
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF991 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
|
Original
|
BF991
OT143
BF991
fet MARKING g2
Marking G2
SOT-103
dual-gate
sot103
transistor SOT103 mosfet
|
PDF
|
BF989
Abstract: MOSFET 4466 BP317 SCA52 dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
|
Original
|
BF989
OT143
SCA52
117061/00/02/pp8
BF989
MOSFET 4466
BP317
SCA52
dual-gate
|
PDF
|
BF990A
Abstract: PHILIPS MOSFET MARKING 4814 mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by
|
Original
|
BF990A
OT143
SCA52
117061/00/02/pp8
BF990A
PHILIPS MOSFET MARKING
4814 mosfet
dual-gate
|
PDF
|
BF997
Abstract: Philips MKP dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
|
Original
|
BF997
OT143
BF997
Philips MKP
dual-gate
|
PDF
|
BF997
Abstract: Dual-Gate Mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF997 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF997 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
|
Original
|
BF997
OT143
BF997
Dual-Gate Mosfet
dual-gate
|
PDF
|
BF990A
Abstract: mosfet handbook Dual-Gate Mosfet philips mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by
|
Original
|
BF990A
OT143
BF990A
mosfet handbook
Dual-Gate Mosfet
philips mosfet
dual-gate
|
PDF
|
BF989
Abstract: Dual-Gate Mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
|
Original
|
BF989
OT143
BF989
Dual-Gate Mosfet
dual-gate
|
PDF
|
transistor SOT103
Abstract: BF991 Dual-Gate Mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF991 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION • Protected against excessive input voltage surges by
|
Original
|
BF991
OT143
transistor SOT103
BF991
Dual-Gate Mosfet
dual-gate
|
PDF
|
BF994S marking code
Abstract: FET MARKING CODE Marking G2 BF994S sot143 marking code G2 Dual-Gate Mosfet dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF994S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF994S FEATURES DESCRIPTION • Protected against excessive input voltage surges by
|
Original
|
BF994S
OT143
BF994S marking code
FET MARKING CODE
Marking G2
BF994S
sot143 marking code G2
Dual-Gate Mosfet
dual-gate
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by
|
Original
|
BF996S
OT143
|
PDF
|
marking code cig
Abstract: fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by
|
Original
|
BF996S
OT143
marking code cig
fet dual gate sot143
Dual-Gate Mosfet
BF996S
dual-gate
p 1S marking SOT143
|
PDF
|
MSB390
Abstract: No abstract text available
Text: 2381 66. 93. Vishay BCcomponents PTC Thermistors, Time Delay For Lighting FEATURES C fluorescent lamp L rectified mains 310 V d.c. for 230 V a.c. mains cathode cathode C • Reliable starting, time and time again FET switch 36 kHz lamp supply FET switch
|
Original
|
MBC425
2002/95/EC
2002/96/EC
11-Apr-05
MSB390
|
PDF
|
PMF370XN
Abstract: SOT323 FET N M 087
Text: PMF370XN N-channel µTrenchMOS extremely low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
|
Original
|
PMF370XN
M3D102
OT323
SC-70)
PMF370XN
SOT323 FET N
M 087
|
PDF
|
SOT323 FET N
Abstract: PMF290XN
Text: PMF290XN N-channel µTrenchMOS extremely low level FET Rev. 01 — 27 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
|
Original
|
PMF290XN
M3D102
OT323
SC-70)
SOT323 FET N
PMF290XN
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: PMF280UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 27 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package
|
Original
|
PMF280UN
M3D102
OT323
SC-70)
MBC870
771-PMF280UN115
PMF280UN
|
PDF
|
JEDEC Drawing MO-006
Abstract: No abstract text available
Text: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK
|
Original
|
INA110
SBOS147A
106dB
10kHz
50ppm/
AD524
AD624
INA110
JEDEC Drawing MO-006
|
PDF
|
Untitled
Abstract: No abstract text available
Text: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK
|
Original
|
INA110
SBOS147A
106dB
10kHz
50ppm/
AD524
AD624
INA110
|
PDF
|
three stage Instrumentation Amplifier
Abstract: INA110AG Power resistor 0,25R transformer pulse 6 pin 500v AD524 AD624 INA110 ad624 application ad524 application
Text: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK
|
Original
|
INA110
SBOS147A
106dB
10kHz
50ppm/
AD524
AD624
INA110
three stage Instrumentation Amplifier
INA110AG
Power resistor 0,25R
transformer pulse 6 pin 500v
AD624
ad624 application
ad524 application
|
PDF
|
AD524
Abstract: AD624 INA110 INA110AG JEDEC Drawing MO-006 dsp relay A0301
Text: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK
|
Original
|
INA110
SBOS147A
106dB
10kHz
50ppm/
AD524
AD624
INA110
AD624
INA110AG
JEDEC Drawing MO-006
dsp relay
A0301
|
PDF
|
fluorescent lamp starter
Abstract: electronic ballast for fluorescent lighting PTCLL05 electronic ballast PTC Thermistor Application of electronics circuits to lighting conventional fluorescent lamp starter igniTION CIRCUIT ptc application note ptc fluorescent ballast
Text: 2381 66. 93. / PTCLL.P.E Vishay BCcomponents PTC Thermistors, Time Delay For Lighting FEATURES C fluorescent lamp • Reliable starting, time and time again FET switch L rectified mains 310 V d.c. for 230 V a.c. mains 36 kHz lamp supply cathode cathode
|
Original
|
MBC425
2002/95/EC
2002/96/EC
08-Apr-05
fluorescent lamp starter
electronic ballast for fluorescent lighting
PTCLL05
electronic ballast
PTC Thermistor
Application of electronics circuits to lighting
conventional fluorescent lamp starter
igniTION CIRCUIT
ptc application note
ptc fluorescent ballast
|
PDF
|
PMF400UN
Abstract: No abstract text available
Text: PMF400UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 11 February 2004 Product data M3D102 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package
|
Original
|
PMF400UN
M3D102
OT323
SC-70)
PMF400UN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK
|
Original
|
INA110
SBOS147A
106dB
10kHz
50ppm/
AD524
AD624
INA110
|
PDF
|
Untitled
Abstract: No abstract text available
Text: INA110 INA INA 110 110 SBOS147A – SEPTEMBER 1986 – JULY 2005 Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● MULTIPLEXED INPUT DATA ACQUISITION SYSTEM ● FAST DIFFERENTIAL PULSE AMPLIFIER ● HIGH SPEED GAIN BLOCK
|
Original
|
INA110
SBOS147A
106dB
10kHz
50ppm/
AD524
AD624
INA110
|
PDF
|
LF3531
Abstract: Thomson lf353 k 105 jfet LF353 APPLICATION 353B LF153AGC LF153BGC LF153GC LF353 LF353BN
Text: r ¿5 7 LF153/A/B LF253/A/B LF353/A/B SGS-THOMSON lU Û T IR M Q O S J-FET INPUT DUAL OP-AMPs LOW POWER CONSUMPTION WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE J-FET INPUT
|
OCR Scan
|
LF153/A/B
LF253/A/B
LF353/A/B
LF353
LCC20
27max.
LF3531
Thomson lf353
k 105 jfet
LF353 APPLICATION
353B
LF153AGC
LF153BGC
LF153GC
LF353BN
|
PDF
|