C10535E
Abstract: MEI-1202 PA505T marking FA fet transistor
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA505T N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +0.1 –0.05 • Two source common MOS FET circuits in package the
|
Original
|
PDF
|
PA505T
SC-59
PA505T
C10535E
MEI-1202
marking FA
fet transistor
|
marking ia
Abstract: uPA602T C10535E MEI-1202 PA602T PA603T
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA602T N-CHANNEL MOS FET 6-PIN 2 CIRCUITS The µPA602T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET circuits. It achieves high-density mounting and • Two MOS FET circuits in package the same size as
|
Original
|
PDF
|
PA602T
PA602T
SC-59
PA603T
marking ia
uPA602T
C10535E
MEI-1202
PA603T
|
2SK1824
Abstract: C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is PACKAGE DIMENSIONS in mm driven at 2.5 V. 0.1 +0.1 –0.05 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and
|
Original
|
PDF
|
2SK1824
2SK1824
C10535E
MEI-1202
|
2SJ243
Abstract: C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven PACKAGE DIMENSIONS in mm at 2.5 V. 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and 0.1 +0.1 –0.05
|
Original
|
PDF
|
2SJ243
2SJ243
C10535E
MEI-1202
|
uPA602T
Abstract: C10535E MEI-1202 PA602T PA603T 6 PIN case mos fet p-channel UPA603T
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA603T P-CHANNEL MOS FET 6-PIN 2 CIRCUITS The µPA603T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET circuits. It achieves high-density mounting and 2.8 ±0.2 FEATURES • Two MOS FET circuits in package the same size as
|
Original
|
PDF
|
PA603T
PA603T
SC-59
PA602T
uPA602T
C10535E
MEI-1202
PA602T
6 PIN case mos fet p-channel
UPA603T
|
a1270* transistor
Abstract: computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141
Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2
|
Original
|
PDF
|
R123-R181,
5091-6489E
5968-1410E
a1270* transistor
computer controlled infrared
M113
C-15
IEEE488
diode ed 2437
AT-8141
|
PH4840S
Abstract: No abstract text available
Text: PH4840S N-channel TrenchMOS intermediate level FET Rev. 02 — 6 November 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features
|
Original
|
PDF
|
PH4840S
PH4840S
|
MTD9N10E
Abstract: SMD310 AN569 MTD6N10 MTD9N10E-D
Text: MOTOROLA Order this document by MTD9N10E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD9N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET
|
Original
|
PDF
|
MTD9N10E/D
MTD9N10E
MTD9N10E/D*
MTD9N10E
SMD310
AN569
MTD6N10
MTD9N10E-D
|
paste
Abstract: AN569 MTD3N25E SMD310
Text: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD3N25E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET
|
Original
|
PDF
|
MTD3N25E/D
MTD3N25E
MTD3N25E/D*
paste
AN569
MTD3N25E
SMD310
|
AN569
Abstract: MTD2955 MTD2955E SMD310 MTD2955 sot-223 MTD2955E-D
Text: MOTOROLA Order this document by MTD2955E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2955E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate TMOS POWER FET
|
Original
|
PDF
|
MTD2955E/D
MTD2955E
MTD2955e/D*
AN569
MTD2955
MTD2955E
SMD310
MTD2955 sot-223
MTD2955E-D
|
AN569
Abstract: MTD2N50 MTD2N50E SMD310
Text: MOTOROLA Order this document by MTD2N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET
|
Original
|
PDF
|
MTD2N50E/D
MTD2N50E
MTD2N50E/D*
AN569
MTD2N50
MTD2N50E
SMD310
|
a1270* transistor
Abstract: 1689c hp plotter
Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2
|
Original
|
PDF
|
5091-6489E
5968-1410E
a1270* transistor
1689c
hp plotter
|
pa1520
Abstract: PA1520BH IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET Compound Field Effect Power Transistor µPA1520B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION The µPA1520B is N-channel Power MOS FET Array that PACKAGE DIMENSIONS built in 4 circuits designed for solenoid, motor and lamp in millimeters
|
Original
|
PDF
|
PA1520B
PA1520B
PA1520BH
pa1520
PA1520BH
IEI-1213
MEI-1202
MF-1134
|
PA1572
Abstract: C10535E C10943X MEI-1202 PT2320 PA1572BH
Text: DATA SHEET Compound Field Effect Power Transistor µPA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and
|
Original
|
PDF
|
PA1572B
PA1572B
PA1572BH
10Pin
PA1572
C10535E
C10943X
MEI-1202
PT2320
PA1572BH
|
|
|
MOSFET SC-59 power
Abstract: AN569 MTD6P10E SMD310
Text: MOTOROLA Order this document by MTD6P10E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6P10E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.66 OHM
|
Original
|
PDF
|
MTD6P10E/D
MTD6P10E
MTD6P10E/D*
MOSFET SC-59 power
AN569
MTD6P10E
SMD310
|
AN569
Abstract: MTD6N20E SMD310
Text: MOTOROLA Order this document by MTD6N20E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6N20E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS on = 0.7 OHM
|
Original
|
PDF
|
MTD6N20E/D
MTD6N20E
MTD6N20E/D*
AN569
MTD6N20E
SMD310
|
2SK1583
Abstract: IEI-1213 MEI-1202 TC-2297B
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1583 N-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK1583 is an N-channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con
|
OCR Scan
|
PDF
|
2SK1583
IEI-1213
MEI-1202
TC-2297B
|
transistor k 4212 fet
Abstract: S211S NE23383B
Text: PRELIMINARY DATA SHEET_ \ | F f ~ / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Hereto Junction FET that utilizes the {Unit : mm
|
OCR Scan
|
PDF
|
NE23383B
NE23383B
transistor k 4212 fet
S211S
|
transistor k 4212 fet
Abstract: gd 361 transistor
Text: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Herero Junction FET that utilizes the Unit : mm
|
OCR Scan
|
PDF
|
NE23383B
NE23383B
transistor k 4212 fet
gd 361 transistor
|
transistor d 2389
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm
|
OCR Scan
|
PDF
|
NE24283B
NE24283B
transistor d 2389
|
TC-2329A
Abstract: F16V 2SJ207 IEI-1213 iei-1209
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ207 P-CHAIMNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit: mm The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con
|
OCR Scan
|
PDF
|
2SJ207
2SJ207,
TC-2329A
F16V
2SJ207
IEI-1213
iei-1209
|
NEC k 2134 transistor
Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
Text: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm
|
OCR Scan
|
PDF
|
NE24283B
NE24283B
NEC k 2134 transistor
nec k 3115
transistor NEC D 587
KU 612
NEC k 3115 transistor
NEC D 587
transistor NEC D 588
NEC m 2134 transistor
P12778EJ1VODSOO
transistor KU 612
|
transistor te 2305
Abstract: SOT223 Package
Text: MOTOROLA Order this document by MTB40N1OE/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet MTB40N10E TMOS E-FET Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS on = 0-04 OHM This advanced TMOS E-FET is designed to withstand high
|
OCR Scan
|
PDF
|
MTB40N1OE/D
transistor te 2305
SOT223 Package
|
NE334501
Abstract: transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor NE334S01 low noise FET NEC U
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.
|
OCR Scan
|
PDF
|
NE334S01
NE334S01
NE334501
transistor k 2761
NEC D 822 P
NEC Ga FET marking C
nec gaas fet marking
NEC Ga FET marking A
ap 2761 l transistor
low noise FET NEC U
|
