IGBT FF 300 R 12 KF2
Abstract: FZ 77 1000 igbt ff 75 r IGBT FZ 1200 FF 100 R 12 kf2 igbt FZ200
Text: IGBT modules Type VcES le A V IcRM v C E sat. ton ts R th J C DC per arm = tvj max tv ,= tvi = tvi 1 rrs 25 °C, typ. 25 °C, typ. 25 °C, typ. 25 °C, typ. A V US |iS |JS °C/W °c tvi O utline Dual m odules 15 R 12 KF 1200 15 30 3 0,4 0,5 0,2 1 150 63 25 R 06 KF2
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 200 R 33 KF2 B1 vorläufiges Datenblatt preliminary datasheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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IGBT FF 450
Abstract: FF 100 R 12 kf2 igbt
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 200 R 33 KF2 vorläufiges Datenblatt preliminary data sheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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IGBT FF 450
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 200 R 33 KF2 vorläufiges Datenblatt preliminary data sheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 33 KF2 Datenblatt data sheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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IF400
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 400 R 33 KF2 Datenblatt data sheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FF 150 R 1200 kf igbt
Abstract: FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ circuit of six pack module igbt FS-100 r 12 FZ 75 IGBT FZ 1200 IGBT FZ 600 IGBT module FZ 1200
Text: IGBT Standard Modules Type VCES V IGBT-Standardmodule IC A ICRM A VCEsat V ton µs ts µs tp = 1 ms tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. tf µs RthJC tvj max °C/W °C tvj=25°C per arm typ. Dual modules n FF 15 R 12 KF 1200 15 30 3,0 0,4 0,50 0,20
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FZ 77 1000
Abstract: IGBT FZ 1200 FZ 77 FF R 1200 FZ200
Text: IGBT modules VcES IC R M lc v CEsal to n ts tf R th J C Wj ' l l i • DC V A '• i * 2 5 °C . ty p t., = 2 5 °C , ty p 'v, 2 5 °C , ly p p e r a rm V us us MS ° C /W °c tp = 1 ms •vi = 2 5 °C A ty p Dual modules FF 15 R 12 KF 1200 15 30 3 0.4 0.5
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IGBT FF 300
Abstract: eupec module igbt FF 150 R 1200 kf igbt IGBT FF 300 R 06 KF2 FF 50 R 12 kf igbt Eupec fz 1200 r 12 IGBT FF 300 R 12 KF2 IGBT module FZ 1200 eupec FZ 800 R 16 FF 25 R 1200 KF
Text: EUPEC IGBT modules tlE D • 34D32T7 00G134M 4*11 « U P E C Fast modules Type VcES lc IcRM V= V A V C E sat. to n RthJC ts tvj max Outline DC 1v| = tvi 2 5 °C, typ. 25 °C, typ. 25 °C, typ. u per arm 1 ms 25 °C, typ. A V us US us °c/w tv = = °c Dual modules
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00G1344
IGBT FF 300
eupec module igbt
FF 150 R 1200 kf igbt
IGBT FF 300 R 06 KF2
FF 50 R 12 kf igbt
Eupec fz 1200 r 12
IGBT FF 300 R 12 KF2
IGBT module FZ 1200
eupec FZ 800 R 16
FF 25 R 1200 KF
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FF 150 R 1200 kf igbt
Abstract: IGBT FF 300 R 06 KF2 IGBT FF 300 FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ 1200 IGBT module FZ FF 75 R 1200 kl igbt FF 50 R 12 kf igbt Eupec fz 1200 r 12
Text: EUPEC IGBT modules tlE D • 34D32T7 00G134M 4*11 « U P E C Fast modules Type VcES lc IcRM V= V A V C E sat. to n RthJC ts tvj max Outline DC 1v| = tvi 2 5 °C, typ. 25 °C, typ. 25 °C, typ. u per arm 1 ms 25 °C, typ. A V us US us °c/w tv = = °c Dual modules
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00G1344
FF 150 R 1200 kf igbt
IGBT FF 300 R 06 KF2
IGBT FF 300
FF 50 R 12 KF2
FZ 300 R 06 KL
IGBT module FZ 1200
IGBT module FZ
FF 75 R 1200 kl igbt
FF 50 R 12 kf igbt
Eupec fz 1200 r 12
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Untitled
Abstract: No abstract text available
Text: EUPEC IGBT modules b lE D • 34032^17 G00134S 32fl H U P E C Normal modules Type Vc e S IcRM lc A ^on ts tf R«hjc DC per arm tvj max = 25 °C, typ. tvj = 25 °C, typ. tvj V us US us °C/W °c 30 3 0,4 0,5 0,3 1 150 1 ms t,| = 25 °C, typ. A tp = V v C E sa t.
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G00134S
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FF100R10KN
Abstract: Eupec fz 1200 r 12 fz 300 r 12 kf2 eupec module igbt FZ200
Text: EUPEC IGBT m odules b lE 34032^7 0G01345 3Efl D IUPEC Normal modules Type VcES IcRM lc A Outline tv] = 25 ”C, typ. t«i = 25 °C, typ. tyj = 25 °C, typ. tv¡ A V US US us °C/W °c 150 59 25 °C, typ. 0,5 0,3 25 50 3 0,4 0,6 0,3 0,5 150 59 50 100 3 0,45
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igbt power module FS 25 R 12 KF2
Abstract: Eupec fz 1200 r 12 FD100 FZ200
Text: EUPEC IGBT modules b lE D • 34032^7 0G 01345 3Efl M U P E C Normal modules Type VcES IcRM lc A Outline tv] = 25 ”C, typ. t«i = 25 °C, typ. tyj = 25 °C , typ. tv¡ A V US US us °C/W °c 150 59 = 25 °C, typ. 0,5 0,3 25 50 3 0,4 0,6 0,3 0,5 150 59 50
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IGBT module FZ 1200
Abstract: IGBT FZ 200 IGBT module FZ 400 FZ 800 R12 KF1 IGBT FZ 800 IGBT FZ 1200 kf1 IGBT FZ 1200 IGBT FZ 600 IGBT FZ 1000 RT200
Text: IG BT-Mod ule IGBT modules Modules IGBT Typ Type V CES lc V A R ,h jc DC pro Zweig per arm par bras tv, max IS ° C /W °c 0: 0,088 0.089 ICRM v CEsat Ion ts tf i ms tv| = 25 °C, typ. lv| = 25 “C, typ. t»,= 2 5 °C, typ tv, 25 °C, typ A V us US Maßbild
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150R06KL
3403EeJ7
IGBT module FZ 1200
IGBT FZ 200
IGBT module FZ 400
FZ 800 R12 KF1
IGBT FZ 800
IGBT FZ 1200 kf1
IGBT FZ 1200
IGBT FZ 600
IGBT FZ 1000
RT200
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surround sound IC upc1891
Abstract: 1891ACY
Text: MATRIX S U R R O U N D - S O U N D P R O C E S S O R The /uPC1891 A is a specific IC to reproduce surround-sound by using a signal m atrix. The IC is based on a unique high-speed and low-noise bipolar process and high-precision on-chip filter technology, and
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uPC1891
I1207)
ZPC1891ACY:
surround sound IC upc1891
1891ACY
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Untitled
Abstract: No abstract text available
Text: TECH. CORP. SPECIFICATIONS CUSTOMER : CTW989 SAMPLE CODE : SG12232WRF-AGBKF2Q MASS PRODUCTION CODE : PG12232WRF-AGBKF2Q RG12232WRF-AGB-KF2 SAMPLE VERSION : 01 SPECIFICATIONS EDITION : 001 DRAWING NO. Ver. : DMD-08284 (Ver.0) PACKAGING NO. (Ver.) : DPK-08549(Ver.0)
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CTW989
SG12232WRF-AGBKF2Q
PG12232WRF-AGBKF2Q
RG12232WRF-AGB-KF2
DMD-08284
DPK-08549
PG12232WRF-AGBKF2Q
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87009
Abstract: No abstract text available
Text: FU JITS U MB 87009 DTMF/PULSE DIALER February 1986 Edition 1.0 DUAL TONE MULTI-FREQUENCY/PULSE DIALER The F u jits u M B 8 7 0 0 9 is an IC f o r p u s h b u tto n tele ph on e sets using Si gate CMOS process and can be used fo r b o th D T M F and PULSE m odes.
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DIP-20P-M
87009
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Untitled
Abstract: No abstract text available
Text: S 405IB 8-CHANNEL ANALOG MULTIPLEXER/DEMULTIPLEXER D E SC R IPTIO N — The 4051 B is an 8-Channel A nalog M u ltip le x e r/D e m u ltip le x e r w ith three Address Inputs A q —A 2 , an active LOW Enable In p u t (E ), eight Independent In p u ts/O u tp u ts (Y q —Y o la n d a
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405IB
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6NO6T
Abstract: E/100
Text: T O SH IB A _ TA1267AF TENTATIVE TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 1 2 6 7 AF MULTISTANDARD PIF/SIF SYNCHRONOUS DEMODULATOR IC FEATURES PIF CIRCUIT • True synchronous PIF demodulator
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TA1267AF
980910EBA1
TA1267F
SSOP24-P-300-1
6NO6T
E/100
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CCIR 468-2
Abstract: No abstract text available
Text: DEVELOPMENT DATA TDA3830 T h is data sheet co n ta in s advance in fo r m a tio n and s p e c ific a tio n s are su b je c t to change w it h o u t n o tic e . _ BTSC-STEREO / SAP / DBX DECODER G ENERAL DESCRIPTION The TD A3830 is a sound processor fo r stereo/second audio programme SAP baseband signals in
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TDA3830
TDA3830
32-pin
CCIR 468-2
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Untitled
Abstract: No abstract text available
Text: 4052B DUAL 4-CHANNEL ANALOG MULTIPLEXER/DEMULTIPLEXER D E S C R IP TIO N — The 40 5 2 B Is a Dual 4-Channel Anatog M u itlp le x e r/D e m u ltlp le x e r w ith com m on channel select logic. Each M u ltlp le x e r/D e m u ltlp le x e r has fo u r Independent In p u ts /O u tp u ts Y q — Y g
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4052B
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fm radio using cd 1619 CP ic circuit diagram
Abstract: PNA7509P TDA1517 equivalent TDA1541A S1 PNA7518P tda7052 equivalent TDA1011 equivalent TEA5570 TEA5570 equivalent mesa
Text: RADIO, A U D IO AND ASSOCIATED SYSTEMS BIPOLAR, MOS Part a page Selection guide Functional in d e x . Numerical in d e x .
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smd npn 2n2222
Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.
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2PC1815L
2PC1815
10xx0.
7Z88986
smd npn 2n2222
bf471
BSR62 equivalent
EQUIVALENT TRANSISTOR bc549c
transistor bf 175
transistor bc547 PH in metal detector
tunnel diode
BSY95A
BF470
BC200
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BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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LCD01
BFG55A
philips discrete a440
IC05 philips
a1211 lg
SMD MARKING CODE ALg
BST60
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