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    FHD1664

    Abstract: FHD1664P FHD1664Q FHD1664R
    Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 SOT-89 Medium Power Transistor NPN FHD1664 FEATURES特征 •Low VCE sat ： VCE(sat) = 0.15V (Typ.)


    Original     		OT-89 FHD1664 500mA FHD1664P FHD1664Q FHD1664R -50mA, 30MHz FHD1664 PDF

    Untitled

    Abstract: No abstract text available
    Text: QOQ ᒦ৖ൈहࡍྯ૵਌ Medium Power Transistor PNP Medium Power Transistor(PNP) FHB1132 QOQ ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 1) Low VCE (sat) = -0.2V(Typ) (IC / IB =-500mA/-50mA) 2) Complements the FHD1664 3) Epitaxial planar type,


    Original     		-500mA/-50mA) FHD1664 FHB1132 OT-89 OT-89 FHB1132P FHB1132Q -100mA -500mA -50mA PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN ᒦ৖ൈहࡍྯ૵਌ Medium Power Transistor NPN Medium Power Transistor(NPN) FHD1664 NPN ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 1) Low VCE (sat) = 0.15V(Typ) (IC / IB =500mA/50mA) 2) Complements the FHB1132 3) Epitaxial planar type,


    Original     		500mA/50mA) FHB1132 OT-89 FHD1664 OT-89 DED1664Q FHD1664R 100mA 500mA PDF