detector apd nec
Abstract: NDL5405L NDL5490 NDL5490L NDL5500 NDL5510 NDL5520C NDL5530 NDL5530C NDL5531
Text: DATA SHEET _ PHOTO DIODE NDL5530C 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS <¿30 jum InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5530C is an InGaAs avalanche photo diode especially designed for a detector of long wavelength optical fiber
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NDL5530C
detector apd nec
NDL5405L
NDL5490
NDL5490L
NDL5500
NDL5510
NDL5520C
NDL5530
NDL5531
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Untitled
Abstract: No abstract text available
Text: PHOTO DIODE ^ NDL5200 OPTICAL FIBER CO M M UNICATION Ge PHOTO DIODE DESCRIPTION NDL5200 Germanium Photo diode is designed for a detector of long wavelength fiber transmission systems. FEATURES PACKAGE DIMENSIONS • High quantum efficiency. 7?= 75 % @ 1 300 nm
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NDL5200
NDL5200
1987M
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P1026
Abstract: M50100
Text: DATA SHEET PHOTO DIODE NDL5530 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ 30 µ m InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5530 is an InGaAs avalanche photo diode especially designed for a detector of long wavelength optical fiber communications systems. It covers the wavelength range between 1 000 and 1 600 nm with high efficiency.
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NDL5530
NDL5530
P1026
M50100
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nec NDL1202
Abstract: No abstract text available
Text: DATA SHEET NEC PHOTO DIODE NDL1202 aECTOON DEVICE OPTICAL FIBER COM MUNICATION SILICO N AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 000 nm.
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NDL1202
NDL1202
1987M
nec NDL1202
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTO DIODE NEC NDL1202 ELECTRON DEVICE OPTICAL FIBER COMMUNICATION SILICON AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 0 0 0 nm.
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NDL1202
NDL1202
tj427S2S
19S7M
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l1202
Abstract: nec A 1383
Text: DATA SHEET NEC PHOTO DIODE N D L1202 ELECTRON DEVICE OPTICAL FIBER COMMUNICATION SILICON AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 000 nm.
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L1202
NDL1202
1987M
l1202
nec A 1383
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transistor KSP 42
Abstract: KEL5002A PC17L1 KDP6004A ksp 13 replacement KPI-L05 KST-312 PC-17K1 PC-17L1 KPI-261D
Text: Contents Optoelectronic Sensors Contents 08 Detectors 10 Emitters 12 Photo Interrupters 16 Photo Couplers 21 Photo ICs 24 Optic Receiver Modules 26 LEDs 29 Infrared Transceiver Modules lrDA 31 Fiber Optic Devices(FOD) 33 Fiber Optic Transceivers(FOT) 34 Optical Communication Devices
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KHP2032
KOD-1017
KOD-1016
KOD-1086
KOD-1051
KOM-1020
KOM-1021
K0M-5121
transistor KSP 42
KEL5002A
PC17L1
KDP6004A
ksp 13 replacement
KPI-L05
KST-312
PC-17K1
PC-17L1
KPI-261D
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTO DIODE NDL5171P Series 1 300 nm OPTICAL FIBER COMMUNICAITONS ^100 ¿an GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5171P Series is a Germanium avalanche photo diode module with multimode fiber. It is designed for detectors of long wavelength transmission systems.
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NDL5171P
GI-50/125)
NDL5171P
NDL5171P1
NDL5171P2
b427525
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PDF PIN APD DIODE DESCRIPTION
Abstract: NDL5531P NDL5531P1 NDL5531P1C NDL5531P1D NDL5531P2 NDL5531P2C NDL5531PC NDL5531PD nec 2501 m
Text: DATA SHEET PHOTO DIODE NDL5531P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ 30 µ m InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors
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NDL5531P
SM-9/125)
PDF PIN APD DIODE DESCRIPTION
NDL5531P1
NDL5531P1C
NDL5531P1D
NDL5531P2
NDL5531P2C
NDL5531PC
NDL5531PD
nec 2501 m
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NEC TV MODULE
Abstract: No abstract text available
Text: DATA SHEET PHOTO DIODE NDL5551P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 4*50 /vm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5551P Series are InGaAs avalanche photo diode modules with multimode fiber. detectors of long wavelength transmission systems and cover the wavelength range between
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NDL5551P
GI-50/125)
NDL5551P1
NDL5551P2
NDL55S1P
NEC TV MODULE
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NDL1202
Abstract: fiber optical photo detector Avalanche Photo Diode
Text: PHC’TO DIODE /* NDL1202 •>* OPTICAL FIBER COMMUNICATION SILICON AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 000 nm.
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NDL12Ã
NDL1202
LC-1077D
1987M
fiber optical photo detector
Avalanche Photo Diode
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC PHOTO DIODE NDLS531P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 030 fim InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an In G a A s avalanche photo diode module with single mode fiber. It is designed for detectors
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NDLS531P
NDL5531P
SM-9/125)
b42752S
L427525
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NDL5200
Abstract: 2c ti apd LD236
Text: PRELIMINARY DATA SHEET PHOTO DIODE MODULE NDL5171P, NDL5171P1, NDL5171P2 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 100 ¡im GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5171P, NDL5171P1 and NDL5171P2 are G erm anium avalanche photo diode m odules w ith m ultim ode fiber.
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NDL5171P,
NDL5171P1,
NDL5171P2
NDL5171P1
NDL5171P2
NDL5171PC,
NDL5171P1C
NDL5171P2C.
GI-50/125)
NDL5200
2c ti apd
LD236
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NEC 2501
Abstract: NDL5551P1 NEC ndl5551pc nec 2501 LD NDL5551P NDL5551P1C NDL5551P1D NDL5551P2 NDL5551PC NDL5551PD
Text: DATA SHEET DATA SHEET PHOTO DIODE NDL5551P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ 50 µ m InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5551P Series are InGaAs avalanche photo diode modules with multimode fiber. They are designed for
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NDL5551P
GI-50/125)
NDL5551P1
NDL5551P2
NEC 2501
NEC ndl5551pc
nec 2501 LD
NDL5551P1C
NDL5551P1D
NDL5551PC
NDL5551PD
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2207B
Abstract: No abstract text available
Text: N E C ELECTRONICS INC bSE H • bM2752S 0038123 7X1 « N E C E DATA SHEET NEC PHOTO DIODE NDL5510C ELECTRON DEVICE 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS ^80 „m InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5510C is an InGaAs Avalanche Photodiode especially designed for a detector of long wavelength optical fiber communica
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bM2752S
NDL5510C
NDL5510C
NDL5520P
DLS501P
NDL5520P1
NDL5501P1
NDL5506P:
Gl-50
DL5516P:
2207B
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Untitled
Abstract: No abstract text available
Text: Photo Transistor MTD8000NW Features High Reliability in Demanding Environments Applications Optical Switches Optical Sensors Optical Detectors Fiber Optic Communications o Maximum Ratings Ta=25 C Characteristic Symbol Max. Test Condition Unit Collector Power
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MTD8000NW
MTD8000NW
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Untitled
Abstract: No abstract text available
Text: b427555 0G37b3S üflê « N E C E b2E D N E C ELECTRONICS INC PHOTO DIODE NDL5102C 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 jum GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION NDL5102C is a Germanium Avalanche Photo diode especially designed for a detector of long wavelength fiber transmission
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b427555
0G37b3S
NDL5102C
NDL5102C
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gi diode
Abstract: diode gi GERMANIUM nec
Text: DATA SHEET PHOTO DIODE NDL5151P Series 1 300 nm OPTICAL FIBER COMMUNICAITONS ^50 /¿m GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5151P Series is a Germanium avalanche photo diode module with multimode fiber. It is designed for detectors of long wavelength transmission systems, and features small dark current and high speed response.
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NDL5151P
GI-50/125)
NDL5151P
GI-50/125
NDL5151P1
NDL5151P2
b427525
gi diode
diode gi
GERMANIUM nec
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"photo transistor"
Abstract: metal detectors IC MTD8060W
Text: Photo Transistor MTD8060W Features High Reliability in Demading Enviroments Metal Can Package Applications Optical Sensors Optical Switches Optical Detectors Fiber Optic Communications o Maximum Ratings Ta=25 C Characteristic Symbol Max. Test Condition Unit
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MTD8060W
MTD8060W
"photo transistor"
metal detectors IC
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MTD8060W
Abstract: No abstract text available
Text: MTD8060W Photo Transistor Features: • High Reliability in Demanding Environments Applications: • Optical Switches • Optical Sensors • Fiber Optic Communications • Optical Detectors Absolute Maximum Ratings Ta=25ºC Items Collector-Emitter Voltage
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MTD8060W
MTD8060W
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MTD3010PN
Abstract: No abstract text available
Text: Photo Diode MTD3010PN Features High Reliability in Demanding Environments Optical Grade Glass Lens Narrow Angular Response Applications Edge Sensing Smoke Detectors Fiber Optics Optical Communication Optical Switch o Maximum Ratings Ta=25 C Characteristic
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MTD3010PN
MTD3010PN
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Lem LT 300 - t
Abstract: NDL5200 L5104
Text: N E C h2E D ELECTRONICS INC • b427525 0030074 22T M N E C E PRELIMINARY DATA SHEET NEC PHOTO DIODE NDL5103P, NDL5103P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>50 G ERM AN IU M A V A LA N CH E PHOTO DIODE M O DULE DESCRIPTION NDL5103P and NDL5103P1 are Germanium Avalanche Photo Diodes with optical fiber, especially designed for detectors of
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b427525
NDL5103P,
NDL5103P1
NDL5103P
NDL5103P1
NDL5103P
NDL51Q3P1
NDL5100C
NDL5104P1
NDL5102
Lem LT 300 - t
NDL5200
L5104
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TOLD2000fDA
Abstract: TCD2703ADG TCD1709DG TCM8230 tyco igbt module 25A TOLD2000MDA TLSU225 TOLD2000 TLP250 MOSFET DRIVER application note TLYH180PF
Text: Optical Semiconductor Devices Visible Laser Diodes z 146 Visible LEDs z 147 Photo Sensors z 156 Photo Couplers & Photo Relays z 159 Fiber-Optic Devices TOSLINK z 186 Image Sensors z 190 145 Visible Laser Diodes Maximum Ratings (Tc = 25°C) Optical output
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40PIN
24PIN
03/3Q
35PIN
15PIN
TCM8210MD
TCM8230MD
24-pin
20-pin
TOLD2000fDA
TCD2703ADG
TCD1709DG
TCM8230
tyco igbt module 25A
TOLD2000MDA
TLSU225
TOLD2000
TLP250 MOSFET DRIVER application note
TLYH180PF
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"photo transistor"
Abstract: MTD8000W
Text: Metal Can Photo Transistor MTD8000W Features High Reliability in Demanding Environments Applications Optical Switches Optical Sensors Optical Detectors Fiber Optic Communications o Maximum Ratings Ta=25 C Characteristic Symbol Max. Test Condition Unit Collector Power
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MTD8000W
MTD8000W
"photo transistor"
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