Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS Search Results

    FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ351-E Renesas Electronics Corporation Silicon P Channel MOSFET Visit Renesas Electronics Corporation
    2SK1954-AZ Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1492-A Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1954-Z-AZ Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation
    2SK1521-E Renesas Electronics Corporation Silicon N Channel MOSFET Visit Renesas Electronics Corporation

    FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TEST88

    Abstract: No abstract text available
    Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools


    Original     		PDF TPC8A01 Qg17nC TEST88

    TPC8A01

    Abstract: No abstract text available
    Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools


    Original     		PDF TPC8A01 Qg17nC TPC8A01

    TPC8A01

    Abstract: No abstract text available
    Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •


    Original     		PDF TPC8A01 Qg17nC TPC8A01

    TPC8A01

    Abstract: MARKING 3AB
    Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •


    Original     		PDF TPC8A01 Qg17nC TPC8A01 MARKING 3AB

    d1595

    Abstract: 2SK1108
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1108 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK1108 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance


    Original     		PDF 2SK1108 2SK1108 d1595

    2SK660

    Abstract: 2SK66
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance


    Original     		PDF 2SK660 2SK660 2SK66

    2SK660

    Abstract: No abstract text available
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance


    Original     		PDF 2SK660 2SK660

    2SK3719

    Abstract: TRANSISTOR BJ 026 drain
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3719 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.3 ±0.05 0.13 –0.05 • Compact package • High forward transfer admittance


    Original     		PDF 2SK3719 2SK3719 TRANSISTOR BJ 026 drain

    Bft46

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic


    Original     		PDF BFT46 MAM385 R77/02/pp11 Bft46

    D1629

    Abstract: 2SK3653
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3653 is suitable for converter of ECM. +0.1 0.3 ±0.05 0.13 –0.05 FEATURES


    Original     		PDF 2SK3653 2SK3653 D1629

    transistor NEC 2SK2552B

    Abstract: 2SK2552B SC-75 D17282
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552B is suitable for converter of ECM. 0.3 +0.1 –0 General-purpose product.


    Original     		PDF 2SK2552B 2SK2552B SC-75 transistor NEC 2SK2552B SC-75 D17282

    CRS15

    Abstract: BFT46
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic


    Original     		PDF BFT46 MAM385 R77/02/pp11 CRS15 BFT46

    2SK3782

    Abstract: D17001 NEC PART NUMBER MARKING
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3782 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3782 is suitable for converter of ECM. 1.2 ±0.1 +0.1 0.3 –0.05 MAX. 0.33


    Original     		PDF 2SK3782 2SK3782 3pXSOF03 D17001 NEC PART NUMBER MARKING

    Contact Electronics

    Abstract: 2SK4028
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK4028 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4028 is suitable for converter of ECM. 1.2 ±0.1 +0.1 0.3 –0.05 MAX. 0.33


    Original     		PDF 2SK4028 2SK4028 3pXSOF03 Contact Electronics

    D1594

    Abstract: 2SK2552 SC-75 J3300
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552 is suitable for converter of ECM. 0.3 +0.1 –0 0.15 +0.1 –0.05 FEATURES


    Original     		PDF 2SK2552 2SK2552 SC-75 D1594 SC-75 J3300

    D1594

    Abstract: 2SK3230 SC-89
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230 is suitable for converter of ECM. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES


    Original     		PDF 2SK3230 2SK3230 SC-89 D1594 SC-89

    transistor NEC 2SK2552

    Abstract: 2sk2552 j7 D1594 2SK2552 SC-75
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552 is suitable for converter of ECM. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES


    Original     		PDF 2SK2552 2SK2552 SC-75 transistor NEC 2SK2552 2sk2552 j7 D1594 SC-75

    Contact Electronics

    Abstract: 2SK4027
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK4027 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4027 is suitable for converter of ECM. 0.4 +0.1 –0.05 2.0 MIN. FEATURES • High gain


    Original     		PDF 2SK4027 2SK4027 SC-59 Contact Electronics

    marking AE

    Abstract: 2SK3718 SC-89 NEC JAPAN
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3718 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.3 ±0.05 0.1–0.05 0.4 The 2SK3718 is suitable for converter of ECM. • Compact package


    Original     		PDF 2SK3718 2SK3718 SC-89 marking AE SC-89 NEC JAPAN

    2SK3653B

    Abstract: 2SK3653
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3653B is suitable for converter of ECM. 0.13 +0.1 –0.05 0.3 ±0.05 0.2 General-purpose product.


    Original     		PDF 2SK3653B 2SK3653B 2SK3653

    2SK3230B

    Abstract: SC-89
    Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230B is suitable for converter of ECM. +0.1 0.3 ±0.05 0.1–0.05 0.4 General-purpose product.


    Original     		PDF 2SK3230B 2SK3230B SC-89 SC-89

    CMUDM7001

    Abstract: mosfet low vgs
    Text: CMUDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed


    Original     		PDF CMUDM7001 CMUDM7001 OT-523 100mA mosfet low vgs

    3N128

    Abstract: No abstract text available
    Text: Order this document by 3N128/D MOTOROLA M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTOR N-CHANNEL MOS FIELD-EFFECT TRANSISTOR . . . designed for VHF amplifier and oscillator applications in com­ munications equipment.


    OCR Scan     		PDF 3N128/D_ 3N128 5000/imhos 3N128/D 3N128/D 3N128

    TPC8A01

    Abstract: MARKING J1A 4X25 pdii
    Text: T O S H IB A TPC8A01 01:TOSH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U—MOS DI 0 2:INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE( U - M O S M ) TENTATIVE TPC8A01 DC-DC CONVERTER NOTE BOOK PC PORTABLE MACHINES AND TOOLS


    OCR Scan     		PDF TPC8A01 TPC8A01 MARKING J1A 4X25 pdii