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    TRANSISTOR mcr 100-8

    Abstract: No abstract text available
    Text: MOTOROLA MC33389 SEMICONDUCTOR TECHNICAL DATA SBC System basis chip Advance Information Automotive System Basis Chip The MC33389 is a monolithic integrated circuit combining many functions frequently used by automotive ECUs. It incorporates a low speed fault


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    PDF MC33389 MC33389 100mA 200mA 125kBaud MC33388 TRANSISTOR mcr 100-8

    Untitled

    Abstract: No abstract text available
    Text: Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX3 Series ●General The PWM type DC/DC converter BM2PXX3 for AC/DC provide an optimum system for all products that include an electrical outlet. BM2PXX3 supports both isolated and non-isolated


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    MIMMG150DR120UZA

    Abstract: No abstract text available
    Text: MIMMG150DR120UZA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module


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    PDF MIMMG150DR120UZA Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG150DR120UZA

    MIMMG150DR120UA

    Abstract: No abstract text available
    Text: MIMMG150DR120UA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module


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    PDF MIMMG150DR120UA Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG150DR120UA

    MIMMG75SR060UK

    Abstract: No abstract text available
    Text: MIMMG75SR060UK 600V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module


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    PDF MIMMG75SR060UK Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG75SR060UK

    MIMMG200DR120UZA

    Abstract: No abstract text available
    Text: MIMMG200DR120UZA 1200V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module


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    PDF MIMMG200DR120UZA Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG200DR120UZA

    MIMMG40H120XB6TN

    Abstract: 1 phase igbt 1200V 40A module inverter circuit diagram
    Text: MIMMG40H120XB6TN 1200V 40A PIM Module RoHS Compliant FEATURES □ High level of integration—only one power semiconductor module required for the whole drive □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current


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    PDF MIMMG40H120XB6TN Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG40H120XB6TN 1 phase igbt 1200V 40A module inverter circuit diagram

    MIMMG150DR120UK

    Abstract: AC welder circuit diagram
    Text: MIMMG150DR120UK 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module


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    PDF MIMMG150DR120UK Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG150DR120UK AC welder circuit diagram

    MIMMG75SR120B

    Abstract: No abstract text available
    Text: MIMMG75SR120B 1200V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module


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    PDF MIMMG75SR120B Tempera75 Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG75SR120B

    pin configuration of 7486 IC

    Abstract: pin DIAGRAM OF IC 7486 Schottky B 1045 TRW PT 3154 D pin DIAGRAM OF IC 7486 datasheet pin configuration OF IC 7486 pin configuration of ic 7448 6232 RAM DIAGRAM OF IC 7106 IC 7486
    Text: S6B33A2 128 RGB Segment & 129 Common Driver For 4,096 Color STN LCD Sep. 06. 2002. Ver. 1.3 Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose,


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    PDF S6B33A2 S6B33A2 Page11 Page24 VOUT45 VIN45 pin configuration of 7486 IC pin DIAGRAM OF IC 7486 Schottky B 1045 TRW PT 3154 D pin DIAGRAM OF IC 7486 datasheet pin configuration OF IC 7486 pin configuration of ic 7448 6232 RAM DIAGRAM OF IC 7106 IC 7486

    SL1925E

    Abstract: DS4955 SL1925 1T379 BB831 Capacitance Varactor Diode KV 4 way rf splitter ic fc-146 4-WAY L-band active splitter
    Text: SL1925 Satellite Zero IF QPSK Tuner IC Preliminary Information DS4955 Issue 3.0 Features ● ● ● ● ● ● ● ● ● Single chip system for direct quadrature down conversion from L-band High signal handling capability for minimum external component count application, requires


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    PDF SL1925 DS4955 30MHz SL1925E DS4955 SL1925 1T379 BB831 Capacitance Varactor Diode KV 4 way rf splitter ic fc-146 4-WAY L-band active splitter

    ba1s

    Abstract: No abstract text available
    Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


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    PDF IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s

    SAMSUNG K9F1208U0B

    Abstract: K9F1208* technical K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D
    Text: K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark Aug. 24th 2003 Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.


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    PDF K9F1208Q0B K9F1208D0B K9F1208U0B SAMSUNG K9F1208U0B K9F1208* technical K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D

    K4R271669E

    Abstract: No abstract text available
    Text: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)


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    PDF K4R271669E 128Mbit K4R271669E

    Untitled

    Abstract: No abstract text available
    Text: XRP9710 and XRP9711 Dual 6A Programmable Power Module Rev. 1.0.1 January 2014 GENERAL DESCRIPTION FEATURES The XRP9710 and XRP9711 are programmable step down power modules providing two 6A outputs. The module package contains the switching controller, power


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    PDF XRP9710 XRP9711 XRP9711 XRP9710 12x12x2

    1T379

    Abstract: BB811 DS4955 SL1925
    Text: SL1925 Satellite Zero IF QPSK Tuner IC Preliminary Information DS4955 Features ● ● ● ● ● ● ● ● ● Single chip system for direct quadrature down conversion from L-band High signal handling capability for minimum external component count application, requires


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    PDF SL1925 DS4955 30MHz 1T379 BB811 DS4955 SL1925

    HFBR-2522

    Abstract: No abstract text available
    Text: Versatile Link Family Application Note 1035 Introduction Optical fiber technology has changed data communication transfer especially in the industrial environment, where data must be transferred between machines rapidly while still ensuring high reliability. Optical fiber is typically fabricated


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    PDF 5964-40027E AV02-0730EN HFBR-2522

    IS43LR16640A

    Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


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    PDF IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit -40oC 64Mx16 IS43LR16640A-5BLI IS43LR16640A-6BLI 60-ball IS43LR16640A IS46LR16640A-5BLA1 IS43LR16640A-6BL

    TXM RX 28 Receiver

    Abstract: No abstract text available
    Text: TLV320AD16 3.3-V INTEGRATED ADSL CODEC SLWS107 – JUNE 2000 D D D D D D Complete Discrete Multitone-Based Asymmetric Digital Subscriber Line Coder/Decoder Supports Full Rate ADSL and G.Lite Application in Both Echo Cancellation or FDM Modes Integrated 14-Bit Converter for


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    PDF TLV320AD16 SLWS107 14-Bit 16-Bit TXM RX 28 Receiver

    15w audio amplifier circuit diagram

    Abstract: mosfet driver marking he sot23-6 MD4101 MO-178 2x500pF 1F MARKING SOT23-6 VA-2230A
    Text: MD4101 1.5W Filterless Class-D Mono Audio Amplifier General Description Features The MD4101 is a single supply,high efficiency P O at 10% THD+N, VDD = 5V 1.5W class-D audio amplifier. A low noise, RL = 8 Ω filterless PWM architecture eliminates the output


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    PDF MD4101 MD4101 MO-178. 15w audio amplifier circuit diagram mosfet driver marking he sot23-6 MO-178 2x500pF 1F MARKING SOT23-6 VA-2230A

    MP-25

    Abstract: NP88N055CLE NP88N055DLE NP88N055ELE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CLE, NP88N055DLE, NP88N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


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    PDF NP88N055CLE, NP88N055DLE, NP88N055ELE NP88N055CLE O-262 O-220AB NP88N055DLE O-263 O-220AB) MP-25 NP88N055CLE NP88N055DLE NP88N055ELE

    pks607

    Abstract: ee25 transformer PKS603-607 pks606 PKS603 PX 1N4007
    Text: PKS603-607 PeakSwitch Family Enhanced, Energy-Efficient, Off-Line Switcher IC With Super Peak Power Performance Product Highlights EcoSmart – Extremely Energy-Efficient • Standby output power ≥0.6 W for 1 W input high line • Sleep mode power ≥2.4 W at 3 W input (high line)


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    PDF PKS603-607 pks607 ee25 transformer PKS603-607 pks606 PKS603 PX 1N4007

    da53

    Abstract: uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD488385 72 M-bit 256K x 18 x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where


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    PDF PD488385 da53 uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TMP47P400V CMOS 4-BIT MICROCONTROLLER TMP47P400VN TMP47P400VF The 47P400V is the system evaluation LSI of 47C200B/400B with 32K bits one-time PROM. The 47P400V programs/verifies using an adapter socket to connect with PROM programmer, as it is in TMM2764AD.


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    PDF TMP47P400V TMP47P400VN TMP47P400VF 47P400V 47C200B/400B TMM2764AD.