Untitled
Abstract: No abstract text available
Text: 35E D • fl23b32Q GG1722S ö M S I P PNP Silicon Switching Transistors SIEM ENS/ S P C L i • • • SMBT2907 SEMIC0N] S ' High DC current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: SMBT 2222, SMBT 2222 A NPN) C Type
|
OCR Scan
|
fl23b32Q
GG1722S
SMBT2907
Q68000-A4336
Q68000-A4337
Q68000-A6501
Q68000-A6474
1/CE-20V
23b32Q
A23b32G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 32E D • Ô 23 b 3 2 0 QQlbb7Q PNP Silicon Darlington Transistors 2 msip BCV 28 BCV 48 S IE M E N S / SPCL-i SEMICONDS For general AF applications High collector current High current gain Complementary types: BCV 29, BCV 49 NPN Type Marking Ordering code
|
OCR Scan
|
Q62702-C1683
Q62702-C1685
Q62702-C1852
Q62702-C1854
6E3b32Q
0Qlbb73
BCV28
BCV48
T-29-29
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance
|
OCR Scan
|
23b3S0
QQ17177
BSS192
-240V
Q62702-S602
23b320
T-37-25
80f/a;
|
PDF
|
RTM 866 - 485
Abstract: No abstract text available
Text: 32E J> • 023ti32Q OGlb^QH 1 « S I P NPN Silicon RF Transistor BFP 93A .SIEMENS/ SPCLi S E M I C O N D S _ • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
023ti32Q
BFP93A
62702-F
OT-143
RTM 866 - 485
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 32E D • Ô53b320 □ 01711=1 1 ■ SIP BSP 297 SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS T - M - O S * • SIPMOS - enhancement mode • Drain-source voltage Vis = 200V • Continuous drain current l 0 - 0.6A • Drain-source on-resistance fWon> = 2 .0 0
|
OCR Scan
|
53b320
Q67000-S068
A23b320
T-39-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3SE D • ñ23b35Q ÜQlbSö^ Ô « S IP Silicon Switching Diode SIEMENS/ SMBD 914 SPCLi SEMICONDS _ T ~ C Z - 0 ? • For high-speed switching applications Type Marking SMBD 914 S5D Ordering code for versions in bulk Q68000-A6418 Ordering code for
|
OCR Scan
|
23b35Q
Q68000-A6418
Q68000-A625
023b3SQ
23b32Q
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BEE D • û53b32Q QG1712b b « S I P NPN Silicon Switching Transistors 3 S'” I Ì SIEMENS/ S P C L i • • • SEMKONDS BSS79 BSS 81 _ High DC current gain Low collector-emitter saturation voltage Complementary types: B S S 80, BSS 82 PNP
|
OCR Scan
|
53b32Q
QG1712b
BSS79
Q62702-S403
Q62702-S402
Q62702-S420
Q62702-S419
Q62702-S503
Q62702-S501
Q62702-S555
|
PDF
|
BC5471
Abstract: BC547E BC 548 NPN relay 876 N 2C S BC5461 BC2371 BC516 548 BC550 bc4151 TLC 5491
Text: SIEMENS/ SPCL-. SEMIC ON DS Application Type NPN = N PNP = P 2TE D • epitaxial = E planar = PL suitable complementary transistors fl23b350 O D l b m b ■ T-'^-Ol Max. ratings Vc b o VCEO VfeBO le r, Plot flth JA [l/CES] V V V mA c mW K/W BC1671>N BC1681)N
|
OCR Scan
|
BC1671
BC1681
BC1821
BC2121
BC2371
BC2381
BC2391
BC2571
BC2581
BC2591
BC5471
BC547E
BC 548 NPN
relay 876 N 2C S
BC5461
BC516 548
BC550
bc4151
TLC 5491
|
PDF
|
g 995
Abstract: No abstract text available
Text: 32E D m 023b32Q OOlbôQ? 3 H S I P BF 995 Silicon N Channel MOSFET Tetrode SIEMENS/ SPCLi SEMICONDS _ For FM and VHF TV input and mixer stages Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 995 MB Q62702-F872
|
OCR Scan
|
023b32Q
Q62702-F872
Q62702-F936
23b32Ã
g 995
|
PDF
|
BFR92P
Abstract: No abstract text available
Text: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.
|
OCR Scan
|
0G17GQ2
BFR92P
OT-23
BFR92P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPN Silicon RF Transistor 35E D • ^ 3 H 7 023b32Q 0011=701 □ H S I P BF775 _ SIEMENS/ SPCL-i SEMICONDS • • Broadband amplifier, mixer, oscillator, and switching applications up to 2 GHz Specially suited for use in TV-sat and UHF TV tuners Type Marking
|
OCR Scan
|
023b32Q
BF775
Q62702-F991
Q62702-F102
23b320
T-31-17
|
PDF
|
BT 815 transistor
Abstract: BT 816 transistor
Text: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code
|
OCR Scan
|
0017S3?
SMBT3906
Q68000-A4341
Q68000-A4417
23b320
BT 815 transistor
BT 816 transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: f - Silicon N Channel M O SFET Tetrode 3SE D • 31 BF 989 &53b35Q OOlbTfl? 1 ■ S I P SIEMENS/ S P CL i SEMICONDS For amplifier and mixer stages in UHF and VHF TV tuners Low Input and output capacitance Type Marking Ordering code for versions In bulk Ordering code for
|
OCR Scan
|
53b35Q
Q62702-F874
Q62702-F969
23b320
BP989
200MHz;
|
PDF
|
62703-F
Abstract: CFY30 GaAs FET cfy 19 siemens gaas fet
Text: fl2 3 b3 2ü BSE D GaAs FET SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS CFY30 T " '3 1 • • • • • • • Low noise Fm n = 1.4 dB at 4 GHz) High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion-implanted planar structure
|
OCR Scan
|
0G1734Ô
CFY30
62703-F
OT-143
fl23b32Q
GG173S7
T--31--25
CFY30
GaAs FET cfy 19
siemens gaas fet
|
PDF
|
|
|
B80C
Abstract: No abstract text available
Text: B EE D • ô23b32Q Q017131 T « SIP PNP Silicon Switching Transistors _ S IE M E N S / SPCLi BSS 80 BSS 82 T ' SEM ICO N D S _ High D C current gain Low collector-emitter saturation voltage Complementary types: B S S 79, B S S 81 NPN Type BSS
|
OCR Scan
|
23b32Q
Q017131
Q62702-S398
Q62702-S399
Q62702-S409
Q62702-S408
Q62702-S557
Q62702-S492
Q62702-S560
Q62702-S482
B80C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
23b320
BFR35AP
62702-F
OT-23
T-31-17
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BEE D • 023b32Q QGlb7EM T H S I P NPN Silicon RF Transistor BF 517 SIEMENS/ SPCL-. SEMICONDS • r ^ 3 i - t 7 _ Broadband amplifier and oscillator applications up to 1 GHz Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape
|
OCR Scan
|
023b32Q
Q62702-F988
Q62702-F78
fl23b32Q.
GQlb72b
BF517
T-31-17
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 35E D • 023b3SG NPN Silicon RF Transìstor 0Q lbflñ3 & « S IP BFP 81 _SIEMENS/ SPCLi SEMICONDS f-3<- 1*7_ • For low-noise amplifiers up to 2 GHz at collector currents from 0.5 to 25 mA. S CECC-type In preparation: CECC 50002/. ESD : Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
023b3SG
62702-F1
OT-143
-J250
|
PDF
|