RFC-5050
Abstract: 50W 50 ohm termination RFD-3050 RFD-5450 RFC-30 RFC 08 RFD-5550
Text: Lead Free RF SOLUTION – NIKKOHM MICROWAVE TERMINATIONS RFC, RFD RFD RFC Feature and Applications RF and microwave termination with 50ohm and 75 ohm characteristic impedance. RFD for coaxial applications and RFC for flange RF resistor and termination. Ni-Cr thin film and alumina substrates realize long life and temperature stability.
|
Original
|
PDF
|
50ohm
RFD-3350
RFD-4450
RFD-5550
RFD-5450
RFD-5475
RFD-8750
RFD-8775
RFC-5050
50W 50 ohm termination
RFD-3050
RFD-5450
RFC-30
RFC 08
RFD-5550
|
Untitled
Abstract: No abstract text available
Text: FLANGED RF POWER TERMINATOR RESISTOR Custom solutions are available. HOW TO ORDER FRFPT 100- 50 F Y B Package Type B = 100 pieces Bulk TCR Y = ±50ppm FEATURES Resistance Tolerance F = ±1% G = ±2% J = ±5 RF and microwave resistors of 50 to 80Ω have flange
|
Original
|
PDF
|
50ppm
FRFPT100
FRFPT250
FRFPT50-100FYB
FRFPT150-100FYB
FRFPT250-100FYB
|
PTB32003X
Abstract: No abstract text available
Text: PTB32003X NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PTB32003X is Designed for Common Base General purpose amplifier Applications up to 4.2 GHz. PACKAGE STYLE .250 2L FLG A ØD FEATURES INCLUDE: B E • Diffused Emitter Ballasting Resistor • Hermetic Flange Package
|
Original
|
PDF
|
PTB32003X
PTB32003X
|
10x smd resistor
Abstract: 100W high power resistor RPH-10B heat sink to220 resistor 270 ohm diode 8889 TO220 RHP-100E high power diode 500v POwer resistor 0,25 100w resistor 220 1W
Text: HIGH POWER RESISTOR – 20W to 140W The content of this specification may change without notification 12/07/07 Custom solutions are available. HOW TO ORDER FEATURES RHP-10A-100 F Y R Packaging 50 pieces T = tube or R= tray (flanged type only)
|
Original
|
PDF
|
RHP-10A-100
250ppm
50ppm
2002/95/EC.
RHP-100A
300mm
100mm
10x smd resistor
100W high power resistor
RPH-10B
heat sink to220
resistor 270 ohm
diode 8889 TO220
RHP-100E
high power diode 500v
POwer resistor 0,25 100w
resistor 220 1W
|
10W 6.8 ohm k ceramic resistor
Abstract: 100 ohm, 10W resistor flange RF resistor 50 flange RF termination 50 50W 50 ohm termination resistor 2.2 K Ohm resistor 1 k ohm RF Resistor 75 OHM RFTF250
Text: RF SOLUTIONS - WILLOW TECHNOLOGIES LTD FLANGED TERMINATIONS RFTF Features and Applications RF and microwave termination of 50ohm have flange cooling. Low return loss, long life and temperature stability a result of Ni-Cr thin film and super heat conductive
|
Original
|
PDF
|
50ohm
RFTF40
RFTF120
RFTF100
RFTF50
RFTF10Y
RFTF40Y
RFTF10Z
RFTF40Z
RFTF150
10W 6.8 ohm k ceramic resistor
100 ohm, 10W resistor
flange RF resistor 50
flange RF termination 50
50W 50 ohm termination
resistor 2.2 K Ohm
resistor 1 k ohm
RF Resistor 75 OHM
RFTF250
|
TC2996D
Abstract: GaAs FET chip GRM39Y5V104Z25V
Text: TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.45 GHz • 11 dB Typical Linear Power Gain at 2.45 GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %
|
Original
|
PDF
|
TC2996D
TC2996D
GRM39COG0R7C50V
GRM39COG1R5C50V
1000PF
GRM39X7R102K50V
GRM39Y5V104Z25V
GRM42-6Y5V106Z25V
GRM31CF5E106ZA01L)
GRM39COG2R5C50V
GaAs FET chip
GRM39Y5V104Z25V
|
flange RF resistor 50
Abstract: Rod Resistors
Text: Introduction Resistors Features • Lead Free, RoHS Compliant Option Available • Low Capacitance • Mounting - Surface Mount, Tab & Cover, Flange, and Rod • Power Levels: 0.05 to 800 watts • 50 & 100 Ohms standard • Tuned Circuit • Available in AlN, BeO, or Alumina
|
Original
|
PDF
|
|
flange RF resistor 50
Abstract: 10W 6.8 ohm k ceramic resistor Stripline Flange Terminations 800OHM 248hc
Text: RF SOLUTIONS - WILLOW TECHNOLOGIES LTD Lead Free FLANGED POWER RESISTORS RFRF Features and Applications RF and microwave resistors of 50 to 800ohm have flange cooling, also applicable for terminations in strip-line circuits. Long life and temperature stability are a result of Ni-Cr thin film and super heat conductive ceramic
|
Original
|
PDF
|
800ohm
RFRF40
RFRF120
RFRF100
RFRF150C100ohmF
RFRF250C100ohmF
flange RF resistor 50
10W 6.8 ohm k ceramic resistor
Stripline Flange Terminations
248hc
|
flange RF resistor 50
Abstract: resistor 270 ohm 150 ohms resistor AL203 100 ohm resistance flange RF termination 50 CHF190104xBF
Text: PL IA NT Features CO M • *R oH S ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR 12.5, 25, 50 and 100 ohm resistance values available ■ High power RF transmission CHF190104xBF Series 800 W Power RF Flanged Chip Termination/Resistor Absolute Ratings
|
Original
|
PDF
|
CHF190104xBF
2002/95/EC
flange RF resistor 50
resistor 270 ohm
150 ohms resistor
AL203
100 ohm resistance
flange RF termination 50
|
42756 regulator
Abstract: 42756 C207 capacitor j146 1300 transistor
Text: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with
|
Original
|
PDF
|
PTVA123501EC
PTVA123501EC
H-36248-2
42756 regulator
42756
C207 capacitor
j146
1300 transistor
|
TQP770001
Abstract: No abstract text available
Text: TQP770001 Advance Data Sheet Bluetooth Two Stage HBT Power Amplifier (EDR Compliant) Features • InGaP HBT Technology • Bluetooth v2.0 class 1 systems • High Efficiency: 50% @ 21.5dBm • EDR (Enhanced Data Rate) Compliant • Under EDR modulation, its low AM-AM and
|
Original
|
PDF
|
TQP770001
12-pin
TQP770001
81-1-A
|
unisem QFN
Abstract: TQP770001 MO-220 QFN 8 CARSEM
Text: TQP770001 Preliminary Data Sheet Bluetooth Two Stage HBT Power Amplifier (EDR Compliant) Features • InGaP HBT Technology • Bluetooth v2.0 class 1 systems • High Efficiency: 50% @ 21.5dBm • EDR (Enhanced Data Rate) Compliant • Under EDR modulation, its low AM-AM and
|
Original
|
PDF
|
TQP770001
TQP770001
unisem QFN
MO-220
QFN 8 CARSEM
|
jedec package MO-220 QFN 20
Abstract: MO-220 TQP770001 resistor 220 Ohm
Text: TQP770001 Preliminary Data Sheet Bluetooth Two Stage HBT Power Amplifier (EDR Compliant) Features • InGaP HBT Technology • Bluetooth v2.0 class 1 systems • High Efficiency: 50% @ 21.5dBm • EDR (Enhanced Data Rate) Compliant • Under EDR modulation, its low AM-AM and
|
Original
|
PDF
|
TQP770001
TQP770001
jedec package MO-220 QFN 20
MO-220
resistor 220 Ohm
|
unisem QFN
Abstract: 20 PIN LEADLESS CHIP CARRIER x-ray JEDEC Drawing MO-220 qfn QFN 8 CARSEM jedec package MO-220 QFN 20
Text: TQP770001 Preliminary Data Sheet Bluetooth Two Stage HBT Power Amplifier (EDR Compliant) Features • InGaP HBT Technology • Bluetooth v2.0 class 1 systems • High Efficiency: 50% @ 21.5dBm • EDR (Enhanced Data Rate) Compliant • Under EDR modulation, its low AM-AM and
|
Original
|
PDF
|
TQP770001
12-pin
TQP770001
unisem QFN
20 PIN LEADLESS CHIP CARRIER x-ray
JEDEC Drawing MO-220 qfn
QFN 8 CARSEM
jedec package MO-220 QFN 20
|
|
|
Untitled
Abstract: No abstract text available
Text: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.
|
Original
|
PDF
|
PTFA041501E
PTFA041501F
PTFA041501E
PTFA041501F
150-watt
H-36248-2
H-37248-2
IS-95
|
PTFA041501E
Abstract: BCP56 LM7805 PTFA041501F R250 LM7805 voltage regulator packages
Text: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.
|
Original
|
PDF
|
PTFA041501E
PTFA041501F
PTFA041501E
PTFA041501F
150-watt
H-36248-2
H-37248-2
IS-95
BCP56
LM7805
R250
LM7805 voltage regulator packages
|
flange RF resistor 50
Abstract: No abstract text available
Text: NT CO M PL IA Features • *R oH S ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR 25, 50 and 100 ohm resistance values available ■ High power RF transmission CHF190104CBF Series 800 W Power RF Flanged Chip Termination/Resistor Absolute Ratings
|
Original
|
PDF
|
CHF190104CBF
AL203
2002/95/EC
flange RF resistor 50
|
flange RF resistor 50
Abstract: 190104
Text: NT CO M PL IA Features • *R oH S ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR 25, 50 and 100 ohm resistance values available ■ High power RF transmission CHF190104CBF Series 800 W Power RF Flanged Chip Termination/Resistor Absolute Ratings
|
Original
|
PDF
|
CHF190104CBF
AL203
2002/95/EC
flange RF resistor 50
190104
|
Untitled
Abstract: No abstract text available
Text: NT CO M PL IA Features • *R oH S ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR 25, 50 and 100 ohm resistance values available ■ High power RF transmission CHF190104CBF Series 800 W Power RF Flanged Chip Termination/Resistor Absolute Ratings
|
Original
|
PDF
|
CHF190104CBF
AL203
2002/95/EC
|
br cornell dubilier
Abstract: No abstract text available
Text: PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz Description The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down
|
Original
|
PDF
|
PTVA104501EH
PTVA104501EH
H-33288-2
br cornell dubilier
|
roger
Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
Text: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and
|
Original
|
PDF
|
PTF041501E
PTF041501F
150watt,
CDMA2000
H-30260-2
H-31260-2
roger
H-30260-2
LM7805
ceramic capacitor 103 z 21
|
Untitled
Abstract: No abstract text available
Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description 25 IM3 -45 20 tin ACPR -50 15 -55 -60 30 32 34 36 38 40 42 t uc • Broadband internal matching • Typical two-carrier WCDMA performance at
|
Original
|
PDF
|
PTFA210701E
PTFA210701F
|
DS 469 ADJ
Abstract: type 103 capacitor, 2kv RF
Text: PTF040551E PTF040551F Thermally Enhanced High Power RF LDMOS FETs 55 W, 450 – 500 MHz Description The PTF040551E and PTF040551F are thermally-enhanced, 55-watt, internally matched GOLDMOS FETs intended for CDMA applications in the 450 to 500 MHz band. Full gold metallization ensures excellent device
|
Original
|
PDF
|
PTF040551E
PTF040551F
55-watt,
PTF040551F*
IS-95
DS 469 ADJ
type 103 capacitor, 2kv RF
|
Untitled
Abstract: No abstract text available
Text: PA1076 1850-1910 MHz. Ultra Linear Amplifier 'iwo/mr M/C/?OmVECotp. Typical Performance Curves -0°C +25°C - A — +85°C See Short Form Chart and Mechanical Section for available outline drawings Pin 1=RF In, Pin 2=Resistor, Pin 3=RF Out, Flange=Ground Features: typical values
|
OCR Scan
|
PDF
|
PA1076
|
