Bc177a
Abstract: No abstract text available
Text: 37E D SEMELAB LTD fll331fl7 DDD0031 5 ISMLB - y - X J - 01 — type No. Package Vc e o •c cont hFEc PD V c e /'C B C1 0 7 BC107A BC107B BC108 BC108A SCRE E N SCREEN SCREEN SCRE E N SCREEN NPN NPN NPN NPN NPN T018 T018 T018 T018 T018 45 45 45 20 20 0.1 0.1
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fll331fl7
DDD0031
BC107A
BC107B
BC108
BC108A
BC108B
BC108C
BC109
BC109B
Bc177a
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Untitled
Abstract: No abstract text available
Text: bOE D “ • fll331fl7 DDQO'lbb 370 ■ SMLB SENELAB PLC '^T'3V'¿ó SEMELAB D2004UK TetraFET METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 10W -28V -1G H Z PUSH-PULL MECHANICAL DATA Dimensions FEATURES PIN1 SOURCE COMMON PIN2
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fll331fl7
D2004UK
300/xs,
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BUL52A
Abstract: SOT93 BUP43 BUP47 BUP49 BUP53 dd453 BUL50A BUL50B BUL51A
Text: 4AE D • fll331fl7 0DDD4S3 IDA ■ SMLB SEMELAB LTD T-Z?-o BI-POLAR TRANSISTORS (CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code HR HR HR HR HR HR HR HR HR HR HR HR UR HR CECC CECC CECC REQ REQ HR HR HR HR CECC CECC CECC CECC Pol NPN NPN NPN NPN NPN
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DD453
BUL50A
S0T93
10min
BUL50B
T0220
BUL51A
30min
DUL51B
BUL52A
SOT93
BUP43
BUP47
BUP49
BUP53
BUL50A
BUL50B
BUL51A
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sml752r4gn
Abstract: No abstract text available
Text: S E ME LA B _ m PL C bGE D fll331fl7 D D D G Ô M t bTl • S M L B i = MOS POWER I M 4 T~-'3>°i - \3 SEME “ ■ I - 800V 750V 800V 750V SML802R4GN SML752R4GN SML802R8GN SML752R8GN LAB 2.4012 2.4012 2.8012 2.8012 4.3A 4.3A 4.0A 4.0A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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fll331fl7
SML802R4GN
SML752R4GN
SML802R8GN
SML752R8GN
752R4GN
802R4GN
752R8GN
802R8GN
De100
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4040BN
Abstract: 4030BN sml3530bn SML4030BN SML4040BN
Text: SENELAB PLC bOE D fll331fl7 OOOGblb GTE Mil ISMLB MOS POW ER d I 3 °i-is ' SEME SML4030BN SML3530BN SML4040BN SML3540BN LAB 400V 350V 400V 350V 0.3012 0.3012 0.4012 0.40Q 18.5A 18.5A 16.0A 16.0A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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fll331fl7
SML4030BN
SML3530BN
SML4040BN
SML3540BN
3530BN
4030BN
3540BN
4040BN
O-247AD
4040BN
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BSW66
Abstract: BU208A BSW67 BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 BSS50
Text: 4flE D • fll331fl7 0 0 0 0 4 5 2 SEMELABL 271 ■ S H L B _ SEMELAB BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number BI.YA8A BLYA9 BLYA9A BLY50 BLY50A BSS15 BSS17 BSS33 B.SSAA BSS50 BSS51 DSS52 BSS60 BSS61 BSS62 BSS71 DSS72 BSS73
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BLY49
BLY49A
BLY50
BLY50A
BSS15
BSS33
120typ
2/10m
40min
BSS50
BSW66
BU208A
BSW67
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ba606
Abstract: BU500
Text: S E N E LA B LTD 37E D fll331fl7 D D Ü 0 0 S 4 3 • S f l L B «'¡I { t ¿S ÍÉ £ á U & 3 ft fc a n ¿^ ¡£ U 3 t t H fií¿á Type No. Option"*^ Polarlty Paoka9e V CEO ¡ £ nt cont hF E @ VCE/>C Pd BU408D BU409 BU409D BU426 BU426A NPN NPN NPN NPN
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fll331fl7
BU408D
BU409
BU409D
BU426
BU426A
T0220
BU433
ba606
BU500
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HT1 npn
Abstract: No abstract text available
Text: SENELAB LTD 37E D fll331fl7 000DD44 0 .'-'H JU . Ht.1. j U' \\\/'yv TV peN o. ? O p t io n 1'*7 Polarl,y Packa9 e VC e o ¡ £ n, hF E @ /¿.-V : PD V C E /IC BDS10 BDS11 BDS12 BDS13 BDS14 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN PNP PNP TO220M T0220M
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fll331fl7
000DD44
BDS10
BDS11
BDS12
BDS13
BDS14
O220M
T0220M
HT1 npn
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BUX28
Abstract: No abstract text available
Text: 37E » SENELAB LTD fll331fl7 □□□□□57 =| • S M L B SEMELABI ty p e No. B UW58 BOW6 4 A BUW6 4 B BUW64B BUW70 BUW71 BUW72 BUW73 BUW74 BUW75 BUW76 BUW77 BOW81 BUW8 1 A BUW85 Reliability Option S C REEN SCREEN SCREEN SCREEN S C REEN SC REEN SC REEN
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fll331fl7
BUW64B
BUW70
BUW71
BUW72
BUW73
BUW74
BUW75
BUW76
BUW77
BUX28
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2N4033
Abstract: 2n4026
Text: fll331fl7 QDDQDlfl T • S N L B 37E D SEMELAB LTD ' IVpe No. Reliability Polarity Option 2N3997 2N3998 2N3999 2N4000 2N4001 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN * * * * T0111 T059 T059 T039 T039 80 80 80 80 100 2N4012 2N4026 2N4027 2N4028
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fll331fl7
2N3997
2N3998
2N3999
2N4000
2N4001
2N4012
2N4026
2N4027
2N4028
2N4033
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BUP38
Abstract: LE17
Text: - SEMELAB 37E LTD Û1331Û7 D Q0QQ14M ISMLB •1 S E M E LA B JUN 2 6 1987 4 'S m g - i , 4Î T - 3 3-13 -• 1 BUP38 SILICO N N P N MECHANICAL DATA EPITAXIAL PLANAR FEATURES =j—r T 12.7 21 • High breakdown voltage imi • Wide area of secondary breakdown
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BUP38
OT-93
fll331fl7
BUP38
LE17
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Untitled
Abstract: No abstract text available
Text: b.QE ]> • Û1331S7 GG0LH34 flbO M S r iL B SEUELAB PLC T ' H - Z S SEMELAB D1014UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DM O SRFFET 20W -28V-400M H z SINGLE ENDED M ECH A N ICA L DATA Dimensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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1331S7
GG0LH34
D1014UK
-28V-400M
300fis,
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s34 schottky diode
Abstract: SB3009 sb30-09 s34 schottky s34 DIODE schottky SOT93M
Text: 4ÔE D Ô1331Û7 ÜDDD4S1 bTfl 5EMELABI SENELAB SCHOTTKY BARRIER DIODES 3 LTD ' l MECHANICAL DATA Dimensions in mm New Product In response to the significant demand for High Voltage Schottky Barrier Rectifier Diodes for use in Advanced Power Supplies and DC/DC Converters, SEMELAB
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T03PB
SB16C
T0220METAL
OT93METAL
s34 schottky diode
SB3009
sb30-09
s34 schottky
s34 DIODE schottky
SOT93M
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Untitled
Abstract: No abstract text available
Text: SEMELAB 37E D LTD JUL 0 6 1988 • Ô1331Ô7 DGODlfiM 5 SEMELAB BUV42A NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for applications requiring low saturation and high gain transistors for reduced load operation M E C H A N IC A L D A T A D im e nsion s in mm
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BUV42A
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BFC52
Abstract: No abstract text available
Text: mi BFC52 SEME LAB 4TH GENERATION MOSFET T 0 2 4 7 -A D Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 5 31 (0 208) 1 49 (0 OS» a — 4 ubÿoT IN £ i * i 1 ! ! ^ ; I 1 0 40 (D 016) 1 01 |0 040) 1 40 (0 055)
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BFC52
T0247-AD
MIL-STD-750
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LM 4585
Abstract: sml451r1gn
Text: SEP1ELAB PLC 0133107 t>OE D000Ô3Ô INI 525 •SMLB ä MOS POWER -13 SML5085GN SML4585GN SEME LAB 500V 450V 500V 450V SML501R1GN SML451R1GN 0.8512 7.0A 7.0A 0.85Q 1.1 on 1.1 on 6.5A 6.5A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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SML5085GN
SML4585GN
SML501R1GN
SML451R1GN
5085GN
451R1GN
501R1GN
4585GN
O-257AA
LM 4585
sml451r1gn
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Untitled
Abstract: No abstract text available
Text: SEMELAB PLC_ bOE D • Ö1331Ö7 □□□OLbä = rr= 4T0 ■ SMLB MOS POWER 4 “ im “ SEME LAB SML1004R2KN 1000V 3.5A 4.20 Q N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 2 5 °C unless otherwise specified.
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SML1004R2KN
SML1004RKN
O-22QAC
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Untitled
Abstract: No abstract text available
Text: mi WM8030 SEME LAB QUAD 8 BIT DAC FEATURES • • • • • • • • • • • Four 8 bit D to A converters Guaranteed Monotonicity 3V to 10V operation Microprocessor, TTL, CMOS compatible 4 Separate voltage reference inputs High impedance reference voltage inputs
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WM8030
8030D
fll331fl7
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Untitled
Abstract: No abstract text available
Text: SEMELAB LTD 37E tfOÖ D 0133107 □ □□024*1 7 • SEM ELAB W BUZ 35 M O S POW ER M EC H A N IC A L DATA N-Channel Enhancem ent M o d e Dimensions in mm APPLICATIONS • DC/DC CONVERTERS • C O M M U N ICA TIO N S EQUIPMENT • M EA SU R IN G & C O N TR O L
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BUZ35
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sml8075hn
Abstract: sml7575hn
Text: SEMELAB bOE PLC 5133157 ]> M il ODDOflbb HTT ISULB MOS POWER d '“P 3 > ° 1 - 1 $ SML8075HN SML7575HN SML8090HN SML7590HN SEM E LAB 800V 750V 800V 750V 11.5A 11.5A 10.5A 10.5A 0.75Q 0.75Q 0.90Q 0.90LÌ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML8075HN
SML7575HN
SML8090HN
SML7590HN
7575HN
8075HN
7590HN
8090HN
Vo5/7575/8090/7590HN
10jiS
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sml752r4cn
Abstract: No abstract text available
Text: bDE D SEMELAB PLC A1331Ô7 OOGDfiEb ÛG3 MSIILB IN I = ^ = SEME m i SML802R4CN SML752R4CN SML802R8CN SML752R8CN LAB 800V 750V 800V 750V 2.4012 2.40Í2 2.8012 2.80Í2 4.5A 4.5A 4.0A 4.0A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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A1331
SML802R4CN
SML752R4CN
SML802R8CN
SML752R8CN
752R4CN
802R4CN
752R8GCN
802R8CN
12802R8C
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