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    FLU10 Search Results

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    FLU10 Price and Stock

    POBCO Inc FLU1014016

    Plastic Flange Bearing, UHMW, 5/8in IDx7/8in ODx1in L, FD=1in, FT=1/8in | POBCO Inc. FLU1014016
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS FLU1014016 Bulk 20 1
    • 1 $4.52
    • 10 $4.52
    • 100 $4.52
    • 1000 $4.52
    • 10000 $4.52
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    POBCO Inc FLU1014012

    Plastic Flange Bearing, UHMW, 5/8in IDx7/8in ODx3/4in L, FD=1-1/8in, FT=1/8in | POBCO Inc. FLU1014012
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS FLU1014012 Bulk 20 1
    • 1 $4.52
    • 10 $4.52
    • 100 $4.52
    • 1000 $4.52
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    POBCO Inc FLU1012012

    Plastic Flange Bearing, UHMW, 5/8in IDx3/4in ODx3/4in L, FD=15/16in, FT=1/8in | POBCO Inc. FLU1012012
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS FLU1012012 Bulk 20 1
    • 1 $4.37
    • 10 $4.37
    • 100 $4.37
    • 1000 $4.37
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    FUJITSU Limited FLU10XMT

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA FLU10XMT 167
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    SUMITOMO ELECTRIC Interconnect Products FLU10XM

    SMT-Device, L-Band, 14.5dB, 2GHz, 180mA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics FLU10XM 2,200
    • 1 -
    • 10 $32.986
    • 100 $32.986
    • 1000 $32.986
    • 10000 $32.986
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    FLU10 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLU10XM Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
    FLU10XM-E1 Fujitsu FET: P Channel: ID 0.45 A Original PDF
    FLU10ZM Eudyna Devices L-Band Medium & High Power GaAs FET Original PDF
    FLU10ZM-E1 Fujitsu Original PDF

    FLU10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: hadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the


    Original     		PDF FLU10XM FLU10XM FCSI0598M200

    FLU10XM

    Abstract: No abstract text available
    Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the


    Original     		PDF FLU10XM FLU10XM V4888

    FLU10XM

    Abstract: No abstract text available
    Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the


    Original     		PDF FLU10XM FLU10XM FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm typ. ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE


    Original     		PDF FLU10ZM FLU10ZM

    FLU10

    Abstract: fujitsu flu fujitsu gaas fet L-band pae100
    Text: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm typ. ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE


    Original     		PDF FLU10ZM FLU10ZM FCSI0202M200 FLU10 fujitsu flu fujitsu gaas fet L-band pae100

    Untitled

    Abstract: No abstract text available
    Text: FLU10XM L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: hadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the


    Original     		PDF FLU10XM FLU10XM

    Untitled

    Abstract: No abstract text available
    Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the


    Original     		PDF FLU10XM FLU10XM FCSI0598M200

    Untitled

    Abstract: No abstract text available
    Text: FLU10ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm typ. High Gain: G1dB=13.0dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU10ZME1 is a GaAs FET designed for base station and CPE application up to a 3.0GHz frequency range. This is a new product


    Original     		PDF FLU10ZME1 FLU10ZME1 25deg

    Untitled

    Abstract: No abstract text available
    Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the


    Original     		PDF FLU10XM FLU10XM

    FLU10XM

    Abstract: FLU10
    Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the


    Original     		PDF FLU10XM FLU10XM VGS794 FLU10

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original     		PDF FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    FLU10XM

    Abstract: No abstract text available
    Text: FLU10XM _ L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P-|C|g=29.5dBnn Typ. High Gain: G-|C|g=14.5dB (Typ.) High PAE: riadd=47% (Typ.) Hermetic Metal/Ceramic (SMT) Package Tape and Reel Available


    OCR Scan     		PDF FLU10XM FLU10XM FCSI0598M200

    FLL105

    Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
    Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ


    OCR Scan     		PDF FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF