KV1720R
Abstract: KV1720RTL KV1720S KV1720STL kv1720 34-1P
Text: POWER&RF Variable capacitance diode for FM tuning FMチューナ用電圧可変容量ダイオード KV1720R/S FEATURES Included Twin Element ツインタイプ素子1組搭載 Very Small Tolerance of Element Being Next Device To Each Other 小さい隣接デバイス間容量偏差
|
Original
|
KV1720R/S
KV1720R
KV1720S
OT23C-3
OT23-3
KV1720RTL.
KV1720STL.
200MHz
KV1720R
KV1720RTL
KV1720S
KV1720STL
kv1720
34-1P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HL1221AC Laser Diode Description H L 1221A C is a 1.2 fim In G aA sP laser diode with d o u b le h etero ju n ctio n stru ctu re. It is su itable as a light source in fiberoptic c o m m u n icatio n s and various o th er types o f optical e q u ip m en t.
|
OCR Scan
|
HL1221AC
|
PDF
|
BAY46
Abstract: BAY44 Diode BAY 55 BAY45 Diode BAY 46 Q60201-Y46 Q60201-Y45 BAY 45 Q60201-Y44
Text: S ilizium -U niversaldio den m it niedrigem S p errstrom BAY 44 BAY 45 -BAY 46 Die Silizium -Dioden BAY 44, BAY 45 und BAY 46 im Glasgehäuse 51 A2 DIN 41880 D O -7 ,
|
OCR Scan
|
Q60201-Y44
Q60201-Y45
Q60201-Y46
BAY46
BAY44
Diode BAY 55
BAY45
Diode BAY 46
Q60201-Y46
Q60201-Y45
BAY 45
Q60201-Y44
|
PDF
|
BGY46B
Abstract: TRANSISTOR regulator fm 513 diode piezoelectric mobile charger Analog Voice scrambler dtmf interface with microcontroller DTMF mobile fm operational amplifier SA612 All Microphone
Text: Philips Semiconductors Semiconductors for Telecom systems Alphanumeric index page BGY46A UHF power amplifier module 42 BGY46B UHF power amplifier module 43 BGY47A UHF power amplifier module 44 BGY95A/B UHF amplifier module 45 BGY96A/B UHF amplifier module
|
OCR Scan
|
BGY46A
BGY46B
BGY47A
BGY95A/B
BGY96A/B
BGY110D/E/F/G
BR211
BS107
BS108
BS170
TRANSISTOR regulator
fm 513 diode
piezoelectric mobile charger
Analog Voice scrambler
dtmf interface with microcontroller
DTMF mobile
fm operational amplifier
SA612
All Microphone
|
PDF
|
am29701
Abstract: AM27S06 AM27S07 AM27S06ADC AM27S06ADM AM27S06AFM AM27S06APC AM27S07ADC AM27S07ADM AM27S07AFM
Text: Am27S06 • Am27S07 Non-Inverting Schottky 64-Bit Random Access Memories D IS T IN C T IV E C H A R A C TER IS TIC S F U N C T IO N A L DESCRIPTIO N • • • • The A m 2 7 S 0 6 and Am 27S 07 are 6 4 -b it R A M s b u ilt using S c h o ttk y diode clam ped transistors in c o n ju n c tio n w ith in ternal EC L c irc u itry
|
OCR Scan
|
Am27S06
Am27S07
64-Bit
16-word
MIL-STD-883
am29701
AM27S06ADC
AM27S06ADM
AM27S06AFM
AM27S06APC
AM27S07ADC
AM27S07ADM
AM27S07AFM
|
PDF
|
30P60
Abstract: No abstract text available
Text: SGS-THOMSON ê œ H J C T fM O û S B Y T 6 0 P -2 0 0 -> 4 0 0 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SW ITCHING LOSSES ■ LOW NOISE TURN-OFF SW ITCHING Cathode connected to case DOP 3 (Plastic iUITABLE APPLICATIO N S
|
OCR Scan
|
60P-200
30P-600/800
30P60
|
PDF
|
transistor D 982
Abstract: TDA7050 All Microphone tda7052 ic POCSAG Receiver piezoelectric mobile charger "true Logarithmic Amplifier" TDA7052 Audio power amplifier IC tda7052
Text: Philips S em iconductors Semiconductors for Telecom systems Functional index page SPEECH/TRANSMISSION CIRCUITS PCA1070 programmable analog CMOS transmission IC 339 TEA1060/1061 versatile telephone transmission circuits with dialler interface; TEA1060: low impedance input for dynamic and magnetic
|
OCR Scan
|
PCA1070
TEA1060/1061
TEA1060:
TEA1061:
BGY46A
BGY46B
BGY47A
BGY95A/B
BGY96A/B
BGY110D/E/F/G
transistor D 982
TDA7050
All Microphone
tda7052 ic
POCSAG Receiver
piezoelectric mobile charger
"true Logarithmic Amplifier"
TDA7052 Audio power amplifier IC
tda7052
|
PDF
|
SMPS CIRCUIT DIAGRAM 5V 20A
Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
Text: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
|
Original
|
I27124
20MT120UF
E78996)
20KHz
SMPS CIRCUIT DIAGRAM 5V 20A
400v 20A ultra fast recovery diode
20MT120UF
diode 10a 400v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with
|
Original
|
I27124
20MT120UF
E78996)
20KHz
|
PDF
|
ultrafast diode 10a 400v
Abstract: X 0238 CE
Text: 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with
|
Original
|
I27124
20MT120UF
E78996)
20KHz
ultrafast diode 10a 400v
X 0238 CE
|
PDF
|
ba 513 diode
Abstract: No abstract text available
Text: M A XIM U M RATINGS Rating Symbol Value Vr 75 Vdc If 200 m Adc *FM surae 500 mA Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Unit BAS16LT1* CASE 318-07, STYLE 8 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Symbol
|
OCR Scan
|
BAS16LT1*
OT-23
O-236AB)
S16LT1
ba 513 diode
|
PDF
|
1N1611AR
Abstract: UHF diode 1N830A DIODE KU 105 D Silicon Point Contact Diode 1N358R
Text: ALPHA IN»/ S E M I C O N D U C T O R 4flE D • 0 5 6 5 4 4 3 Q 0 0 1 1 7 0 bfl? ■ ALP Silicon Point Contact Detector Diodes 'Tcr>o7 Features ■ Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed
|
OCR Scan
|
|
PDF
|
ir igbt 1200V 40A
Abstract: 20MT120UF E78996 bridge
Text: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
|
Original
|
20MT120UF
E78996)
20KHz
12-Mar-07
ir igbt 1200V 40A
20MT120UF
E78996 bridge
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
|
Original
|
20MT120UF
E78996)
20KHz
08-Mar-07
|
PDF
|
|
|
Diode C219
Abstract: resistance 220 ohm diode 1n6
Text: International lï»RjRectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT H a lf-B rid g e VCE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail"
|
OCR Scan
|
IRGTI120F06
10KHz
50KHz
su513
IRGTI120F06
100nH
C-224
Diode C219
resistance 220 ohm
diode 1n6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 20A Avg. 60 Volts SBD C20T06QH •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitive Peak Surge Reverse Voltage
|
Original
|
C20T06QH
20mVRMS,
100kHz,
C20T06QH/C20T06QH-11A
|
PDF
|
C20T06QH
Abstract: No abstract text available
Text: 20A Avg. 60 Volts SBD C20T06QH •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitive Peak Surge Reverse Voltage
|
Original
|
C20T06QH
duty1/50
Tc124
C20T06QH/C20T06QH-11A
20mVRMS,
100kHz,
C20T06QH
|
PDF
|
diode skmd 40 f 10 semikron
Abstract: IR 421F SKMD42F10 SKKD42F15 SKKD42F10 SKKD42F SKKD42F12 SKKD42F14 SKMD42F SKND42F
Text: S IE D • Ö13bb71 00D3421 BID « I S E K G SEMIKRON SËÎÏIIKRON INC V rsm V rrm Ifrms maximum value for continuous operation 120 A V Ifav (sin. 180; Tease =85°C;50Hz) 42 A 1000 SKKD42F 10 SKMD 42 F 10 SKND42F 10 1200 SKKD42 F 12 SKMD 42 F 12 SKND42F 12
|
OCR Scan
|
13bb71
00D3421
SKKD42F10
SKND42F10
SKKD42F12
SKND42F12
SKKD42F14
SKKD42F15
SKND42F15
SKKD42F
diode skmd 40 f 10 semikron
IR 421F
SKMD42F10
SKMD42F
SKND42F
|
PDF
|
PH01
Abstract: TUA4401K BY1230 BAR63 BB914 4401K f7108 ONE CHIP FM Bicmos Processes d70 Crystal OSCILLATOR
Text: Wireless Components FM Car Radio IC with PLL TUA 4401K V 2.1 Specification 17.02.00 DS 1 CONFIDENTIAL Revision History: Current Version: 02.00 Previous Version:Data Sheet 23.09.1999 Page in previous Version Page (in current Version) Subjects (major changes since last revision)
|
Original
|
4401K
300ns
250ns)
PH01
TUA4401K
BY1230
BAR63
BB914
f7108
ONE CHIP FM
Bicmos Processes
d70 Crystal OSCILLATOR
|
PDF
|
BAR63
Abstract: BB914 PH01 TUA4401K divider by 10 PMQFP-44 BB914 equivalent
Text: Wireless Components FM Car Radio IC with PLL TUA 4401K V 2.1 Specification 17.02.00 DS 1 Revision History: Current Version: 02.00 Previous Version:Data Sheet 23.09.1999 Page in previous Version Page (in current Version) Subjects (major changes since last revision)
|
Original
|
4401K
300ns
250ns)
BAR63
BB914
PH01
TUA4401K
divider by 10
PMQFP-44
BB914 equivalent
|
PDF
|
RK 723 007
Abstract: DIODE RK 306 SELECTOR SWITCH ASEA ABG RK 795 001-aa RK741 RK717 CATALOGUE SK 63-1 E ASEA ABG 10 RK795 RK70-10E
Text: C a ta lo g u e R K 70- 10E Edition 1 5930-09 Su persecTes calatog ues R K 7 M O E RK 74-1OE and R K 7 8 -2 E Relay accessories Pushbuttons Component blocks ASEA T h e re lay accesso ries a re used to provide a relay, protective relay or other equip m en t, with
|
OCR Scan
|
RK70-10E
74-1OE
RK78-2E
S-721
i960-Â
RK 723 007
DIODE RK 306
SELECTOR SWITCH ASEA ABG
RK 795 001-aa
RK741
RK717
CATALOGUE SK 63-1 E
ASEA ABG 10
RK795
|
PDF
|
tea6100
Abstract: VLFM
Text: INTEGRATED CIRCUITS DATA SHEET TEA6100 FM/IF system and microcomputer-based tuning interface Product specification File under Integrated Circuits, IC01 August 1987 Philips Semiconductors Product specification FM/IF system and microcomputer-based tuning interface
|
Original
|
TEA6100
01-Aug-87
VLFM
|
PDF
|
958b
Abstract: AS36 IFR 740 IRGTI120F06
Text: International ü r ]Rectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V • Rugged Design • Sim ple gate-drive • Fast operation up to 10 K H z hard switching, or 5 0K H z resonant • Switching-Loss Rating includes all "tail"
|
OCR Scan
|
IRGTI120F06
10KHz
50KHz
C-224
0DEDD14
958b
AS36
IFR 740
IRGTI120F06
|
PDF
|
m7 smd diodes
Abstract: DG401
Text: REVISIONS LTR APPROVED DATE YR-MO-DA DESCRIPTION REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 5_ i PMIC N/A fi STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY A LL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A DEFENSE ELECTRONICS SUPPLY CENTER
|
OCR Scan
|
iw/60Â
5962-9056901EX
DG401AK/883
5962-90569012X
DG401AZ/883
m7 smd diodes
DG401
|
PDF
|
