28v020
Abstract: FM28V020 AN108 FM18L08
Text: AN108 Differences in FM18L08 and FM28V020 Applies to 256Kb Parallel F-RAM Devices DESCRIPTION This document points out the differences the FM18L08 and FM28V020 parallel F-RAM devices. For most designs, the FM28V020 device can be considered equivalent or better than the FM18L08. The two
|
Original
|
AN108
FM18L08
FM28V020
256Kb
FM28V020
FM18L08.
28v020
AN108
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to Battery-Backed SRAM
|
Original
|
FM18L08
256Kb
FM18L08
256-kilobit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Preview FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
|
Original
|
FM18L08
256Kb
FM18L08
256-kilobit
|
PDF
|
FM18L08-70-S
Abstract: 32kx8 sram FM18L08 FM18L08-70-P MS-011 MS-013
Text: Product Preview FM18L08 256Kb 3V Bytewide FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
|
Original
|
FM18L08
256Kb
32Kx8
FM18L08-70-S
32kx8 sram
FM18L08
FM18L08-70-P
MS-011
MS-013
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
|
Original
|
FM18L08
256Kb
FM18L08
256-kilobit
|
PDF
|
FM18L08-70-S
Abstract: ttl cmos advantages disadvantages FM18L08 FM18L08-70-P MS-011 MS-013 FM18L08-70
Text: Product Preview FM18L08 256Kb Bytewide 3V FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
|
Original
|
FM18L08
256Kb
32Kx8
FM18L08-70-S
ttl cmos advantages disadvantages
FM18L08
FM18L08-70-P
MS-011
MS-013
FM18L08-70
|
PDF
|
fram
Abstract: FM1808 FM1608 FM18L08
Text: Application Note Replacing SRAM with FRAM Parallel FRAM Design Considerations Ramtron offers three FRAM devices that are pin compatible with industry standard bytewide x8 SRAMs. The FM1608 is an 8Kx8 and the FM1808 and FM18L08 are 32Kx8 devices, all of which may be used
|
Original
|
FM1608
FM1808
FM18L08
32Kx8
545-FRAM,
fram
|
PDF
|
FM18L08
Abstract: FM18L08-70-P FM18L08-70-S MS-011 MS-013 BBSRAM
Text: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to Battery-Backed SRAM
|
Original
|
FM18L08
256Kb
FM18L08
256-kilobit
FM18L08-70-P
FM18L08-70-S
MS-011
MS-013
BBSRAM
|
PDF
|
FM18L08-70-S
Abstract: 1E16 FM18L08 FM18L08-70-P MS-013
Text: Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data retention at 85° C • Unlimited read/write cycles • NoDelay write • Advanced high-reliability ferroelectric process
|
Original
|
FM18L08
256Kb
32Kx8
28-pin
600-mil
MS-011
FM18L08-70-S
1E16
FM18L08
FM18L08-70-P
MS-013
|
PDF
|
AN-100
Abstract: FM1608 FM1808 FM18L08
Text: AN-100 Replacing SRAM with FRAM Parallel FRAM Design Considerations Ramtron offers three FRAM devices that are pin compatible with industry standard bytewide x8 SRAMs. The FM1608 is an 8Kx8 and the FM1808 and FM18L08 are 32Kx8 devices, all of which may be used
|
Original
|
AN-100
FM1608
FM1808
FM18L08
32Kx8
545-FRAM,
AN-100
|
PDF
|
RAMTRON
Abstract: 130nm CMOS 256kb ferroelectric FM28V020 1E14 FM18L08 FM24V02 FM24V05 FM24V10
Text: Electronics Components World - Ramtron Launches V-Family 256-Kilobit Parallel F-RAM Page 1 of 3 New Products / Ramtron Launches V-Family 256-Kilobit Parallel F-RAM Publication date: 11 August 2009 Ramtron Launches V-Family 256-Kilobit Parallel F-RAM Ramtron International Corporation Nasdaq: RMTR , a leading developer and supplier
|
Original
|
256-Kilobit
FM28V020,
256-Kilobit
FM25V05
512Kb
FM24V02
256Kb
FM25V02
RAMTRON
130nm CMOS
ferroelectric
FM28V020
1E14
FM18L08
FM24V02
FM24V05
FM24V10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FM28V100 1-Mbit Bytewide F-RAM Memory Features SRAM Replacement • JEDEC 128Kx8 SRAM pinout • 60 ns Access Time, 90 ns Cycle Time Low Power Operation • 2.0V – 3.6V Power Supply • Standby Current 90 µA typ • Active Current 7 mA (typ) Superior to Battery-backed SRAM Modules
|
Original
|
FM28V100
128Kx8
32-pin
FM28V100
|
PDF
|
FM28V100-TG
Abstract: FM28V100 FM28V100-T FM18L08 FM20L08 A16-A3
Text: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
|
Original
|
FM28V100
128Kx8
33MHz
FM28V100
while13
128Kx8
32-pin
FM28V100,
FM28V100-T
FM28V100-TG
FM28V100-T
FM18L08
FM20L08
A16-A3
|
PDF
|
FM28V020-SG
Abstract: FM28V020-SGTR FM28V020 FM18L08
Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
|
Original
|
FM28V020
256Kbit
32Kx8
40MHz
FM28V020
28-pin
MS-013D
FM28V020,
FM28V020-SG
FM28V020-SG
FM28V020-SGTR
FM18L08
|
PDF
|
|
FM18L08
Abstract: FM20L08 FM20L08-60-TG
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Industrial Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
|
Original
|
FM20L08
128Kx8
33MHz
128Kx8
FM18L08
FM20L08
FM20L08-60-TG
|
PDF
|
fm23mld16
Abstract: FM3316 7313 28 pin FM25L04 soic8 footprint interface 8KB ROM and 16KB RAM to 8051 FM22L16 FM6124 footprint soic28 RAMTRON
Text: Co mp uti ng M ete rin g Au tom oti ve Ind us tria l M ed ica l Sc ien tifi c g rin e t e M e tiv o tom Au ng uti p m Co fic nti e i Sc l tria s u Ind Short Form Catalog l ica d e M First Edition 2009 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine
|
Original
|
300-million
fm23mld16
FM3316
7313 28 pin
FM25L04
soic8 footprint
interface 8KB ROM and 16KB RAM to 8051
FM22L16
FM6124
footprint soic28
RAMTRON
|
PDF
|
FM28V020-TG
Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003
Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
|
Original
|
FM28V020
256Kbit
FM28V020
FM28V020-TG,
FM28V020-TG
A9482296TG
32Kx8
FM28V020-TG
AEC-Q100-002
FM18L08
FM28V020-SG
FM28V020-SGTR
FM28V020TG
AEC-Q100-003
|
PDF
|
FM28V100
Abstract: No abstract text available
Text: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
|
Original
|
FM28V100
128Kx8
33MHz
128Kx8
FM28V100
32-pin
FM28V100,
FM28V100-T
A08316340282
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
|
Original
|
FM21L16
128Kx16
256Kx8
33MHz
128Kx16
FM21L16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
|
Original
|
FM28V020
256Kbit
FM28V020
FM28V020-TG,
FM28V020-TG
A9482296TG
32Kx8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
|
Original
|
FM20L08
128Kx8
33MHz
128Kx8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
|
Original
|
FM28V020
256Kbit
FM28V020
FM28V020-TG,
FM28V020-TG
A9482296TG
32Kx8
|
PDF
|
TCA 290
Abstract: No abstract text available
Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules
|
Original
|
FM20L08
128Kx8
33MHz
128Kx8
TCA 290
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process
|
Original
|
FM21LD16
128Kx16
256Kx8
33MHz
128Kx16
48-ball
FM21LD16,
C8556953BG1,
FM21LD16-60-BG
C8556953BG1
|
PDF
|