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    FM18L08 REPLACE Search Results

    FM18L08 REPLACE Result Highlights (5)

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    HA4158- Coilcraft Inc OBSOLETE. Replaced by HA4158-EL Visit Coilcraft Inc
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    FM18L08 REPLACE Datasheets Context Search

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    28v020

    Abstract: FM28V020 AN108 FM18L08
    Text: AN108 Differences in FM18L08 and FM28V020 Applies to 256Kb Parallel F-RAM Devices DESCRIPTION This document points out the differences the FM18L08 and FM28V020 parallel F-RAM devices. For most designs, the FM28V020 device can be considered equivalent or better than the FM18L08. The two


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    AN108 FM18L08 FM28V020 256Kb FM28V020 FM18L08. 28v020 AN108 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to Battery-Backed SRAM


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    FM18L08 256Kb FM18L08 256-kilobit PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Preview FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


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    FM18L08 256Kb FM18L08 256-kilobit PDF

    FM18L08-70-S

    Abstract: 32kx8 sram FM18L08 FM18L08-70-P MS-011 MS-013
    Text: Product Preview FM18L08 256Kb 3V Bytewide FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


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    FM18L08 256Kb 32Kx8 FM18L08-70-S 32kx8 sram FM18L08 FM18L08-70-P MS-011 MS-013 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


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    FM18L08 256Kb FM18L08 256-kilobit PDF

    FM18L08-70-S

    Abstract: ttl cmos advantages disadvantages FM18L08 FM18L08-70-P MS-011 MS-013 FM18L08-70
    Text: Product Preview FM18L08 256Kb Bytewide 3V FRAM Memory Features 256K bit Ferroelectric NonVolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


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    FM18L08 256Kb 32Kx8 FM18L08-70-S ttl cmos advantages disadvantages FM18L08 FM18L08-70-P MS-011 MS-013 FM18L08-70 PDF

    fram

    Abstract: FM1808 FM1608 FM18L08
    Text: Application Note Replacing SRAM with FRAM Parallel FRAM Design Considerations Ramtron offers three FRAM devices that are pin compatible with industry standard bytewide x8 SRAMs. The FM1608 is an 8Kx8 and the FM1808 and FM18L08 are 32Kx8 devices, all of which may be used


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    FM1608 FM1808 FM18L08 32Kx8 545-FRAM, fram PDF

    FM18L08

    Abstract: FM18L08-70-P FM18L08-70-S MS-011 MS-013 BBSRAM
    Text: FM18L08 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year Data Retention • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Superior to Battery-Backed SRAM


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    FM18L08 256Kb FM18L08 256-kilobit FM18L08-70-P FM18L08-70-S MS-011 MS-013 BBSRAM PDF

    FM18L08-70-S

    Abstract: 1E16 FM18L08 FM18L08-70-P MS-013
    Text: Preliminary FM18L08 256Kb 2.7-3.6V Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data retention at 85° C • Unlimited read/write cycles • NoDelay write • Advanced high-reliability ferroelectric process


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    FM18L08 256Kb 32Kx8 28-pin 600-mil MS-011 FM18L08-70-S 1E16 FM18L08 FM18L08-70-P MS-013 PDF

    AN-100

    Abstract: FM1608 FM1808 FM18L08
    Text: AN-100 Replacing SRAM with FRAM Parallel FRAM Design Considerations Ramtron offers three FRAM devices that are pin compatible with industry standard bytewide x8 SRAMs. The FM1608 is an 8Kx8 and the FM1808 and FM18L08 are 32Kx8 devices, all of which may be used


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    AN-100 FM1608 FM1808 FM18L08 32Kx8 545-FRAM, AN-100 PDF

    RAMTRON

    Abstract: 130nm CMOS 256kb ferroelectric FM28V020 1E14 FM18L08 FM24V02 FM24V05 FM24V10
    Text: Electronics Components World - Ramtron Launches V-Family 256-Kilobit Parallel F-RAM Page 1 of 3 New Products / Ramtron Launches V-Family 256-Kilobit Parallel F-RAM Publication date: 11 August 2009 Ramtron Launches V-Family 256-Kilobit Parallel F-RAM Ramtron International Corporation Nasdaq: RMTR , a leading developer and supplier


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    256-Kilobit FM28V020, 256-Kilobit FM25V05 512Kb FM24V02 256Kb FM25V02 RAMTRON 130nm CMOS ferroelectric FM28V020 1E14 FM18L08 FM24V02 FM24V05 FM24V10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM28V100 1-Mbit Bytewide F-RAM Memory Features SRAM Replacement • JEDEC 128Kx8 SRAM pinout • 60 ns Access Time, 90 ns Cycle Time Low Power Operation • 2.0V – 3.6V Power Supply • Standby Current 90 µA typ • Active Current 7 mA (typ) Superior to Battery-backed SRAM Modules


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    FM28V100 128Kx8 32-pin FM28V100 PDF

    FM28V100-TG

    Abstract: FM28V100 FM28V100-T FM18L08 FM20L08 A16-A3
    Text: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


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    FM28V100 128Kx8 33MHz FM28V100 while13 128Kx8 32-pin FM28V100, FM28V100-T FM28V100-TG FM28V100-T FM18L08 FM20L08 A16-A3 PDF

    FM28V020-SG

    Abstract: FM28V020-SGTR FM28V020 FM18L08
    Text: Preliminary FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32Kx8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


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    FM28V020 256Kbit 32Kx8 40MHz FM28V020 28-pin MS-013D FM28V020, FM28V020-SG FM28V020-SG FM28V020-SGTR FM18L08 PDF

    FM18L08

    Abstract: FM20L08 FM20L08-60-TG
    Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory – Industrial Temp. Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


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    FM20L08 128Kx8 33MHz 128Kx8 FM18L08 FM20L08 FM20L08-60-TG PDF

    fm23mld16

    Abstract: FM3316 7313 28 pin FM25L04 soic8 footprint interface 8KB ROM and 16KB RAM to 8051 FM22L16 FM6124 footprint soic28 RAMTRON
    Text: Co mp uti ng M ete rin g Au tom oti ve Ind us tria l M ed ica l Sc ien tifi c g rin e t e M e tiv o tom Au ng uti p m Co fic nti e i Sc l tria s u Ind Short Form Catalog l ica d e M First Edition 2009 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine


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    300-million fm23mld16 FM3316 7313 28 pin FM25L04 soic8 footprint interface 8KB ROM and 16KB RAM to 8051 FM22L16 FM6124 footprint soic28 RAMTRON PDF

    FM28V020-TG

    Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


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    FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 FM28V020-TG AEC-Q100-002 FM18L08 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003 PDF

    FM28V100

    Abstract: No abstract text available
    Text: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


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    FM28V100 128Kx8 33MHz 128Kx8 FM28V100 32-pin FM28V100, FM28V100-T A08316340282 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM21L16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay™ Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


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    FM21L16 128Kx16 256Kx8 33MHz 128Kx16 FM21L16 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


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    FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


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    FM20L08 128Kx8 33MHz 128Kx8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


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    FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8 PDF

    TCA 290

    Abstract: No abstract text available
    Text: Preliminary FM20L08 1Mbit Bytewide FRAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • Unlimited Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


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    FM20L08 128Kx8 33MHz 128Kx8 TCA 290 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM21LD16 2Mbit F-RAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx16 • Configurable as 256Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process


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    FM21LD16 128Kx16 256Kx8 33MHz 128Kx16 48-ball FM21LD16, C8556953BG1, FM21LD16-60-BG C8556953BG1 PDF