MN638S
Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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infringement0718
H1-C01EC0-0110015TA
MN638S
STA464C
sk 3001s
relay Re 04501
spf0001
sta509a
Schottky Diode 80V 6A
2SD2633
sk 5151s
SLA2403M
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FMPG2F
Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Text: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179
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RBV-60
RBV-40
FMPG2F
marking RBV - 401
3f series surface mount transistor
FMXA-2202S
RBV-406M
SJPM-H4
FMV-3HU DIODE
diode eu02
rectifier rbv-606
marking RBV
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FMB-26
Abstract: FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56 SPB-66S
Text: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150
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FMB-36M
Abstract: FMB26L SF-PW
Text: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150
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CTB24L
Abstract: ctb34m
Text: 5-5. Schottky Barrier Diodes Surface Mount Type Type No. SFPA-51 VRM IF AV IFSM (V) (A) (A) 10 Tj Tstg (°C) 60 Electrical Characteristics VF (V) IR H•IR Condition (mA) (mA) Fig. = IF Ta = 100°C No. max per max per max per element element element 0.34
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SFPA-51
SFPB-52
SFPB-62
SFPB-72
SFPA-53
SFPA-63
SFPA-73
SFPE-63
SFPJ-53
SFPJ-63
CTB24L
ctb34m
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FMBG16
Abstract: MARKING RK fmbg19l FMB-G24H SFPJ-73
Text: Schottky Barrier Diodes 4-4 4-4-1 1 Chip VRM IO VF IR V (A) (V) (mA) SFPA-53 0.36 1.5 Surface mount (SFP) 2 SFPB-56 EA 03 0.36 1.5 Axial(E0) 5 AK 06 MI2A3* 0.39 2.0 Surface mount (Compact) 1 0.45 1.0 Surface mount (SFP) MI1A3 0.47 1.0 AK 03 0.55 EK 03 Part No.
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SFPA-53
SFPJ-53
SFPA-63
SFPJ-63
SFPE-63*
SFPA-73
SFPJ-73
SPJ-G53S
SFPB-54
SFPB-64
FMBG16
MARKING RK
fmbg19l
FMB-G24H
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RPER11
Abstract: RPER11H SI-8008HFE RPER11H475K5 8050H FMB-G16L RPER1 SI-8050HFE
Text: 1-1-2 Switching Mode Regulator ICs SI-8000HFE Series Full-Mold, Separate Excitation Step-down Switching Mode Regulator ICs •Features ■Lineup • Compact full-mold package equivalent to TO220 Part Number SI-8008HFE VO (V) Variable (0.8 to 15) • Output current: 5.5 A
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SI-8000HFE
SI-8008HFE
SI-8050HFE
RPER11H475K5
FMB-G16L
RPER11
RPER11H
SI-8008HFE
RPER11H475K5
8050H
FMB-G16L
RPER1
SI-8050HFE
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Schottky Barrier Diodes
Abstract: ek 1036 FMB29L
Text: 4-4 Schottky Barrier Diodes VRM V 60 90 IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Tj (°C) Rth(j-l) Rth(j-c) (°C/W)
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O-220F
O-220F2Pin
FMB-26
Schottky Barrier Diodes
ek 1036
FMB29L
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FMB-26
Abstract: FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56 SPB-66S
Text: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150
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66s 66
Abstract: FMB-26 FMB-26L FMB-36 FMB-G16L FME-2106 SFPB-56 SFPB-66 SFPB-76 SFPW-56
Text: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150
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diode 8603
Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Text: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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VR-60SS
VR-61SS
diode 8603
SOT23 1Z
FMV-3HU
RM2C
RN4Z
General FBT
UX-F5B
3gu diode
diode RBV-406M
Part marking
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Untitled
Abstract: No abstract text available
Text: SI-8050HFE DC-to-DC Step-Down Converter Features and Benefits Description 5.5 A output current supplied in a small, through-hole mount power package High efficiency: 83% at VIN = 15 V, IO = 3.0 A,VO = 5 V Requires only five external components optional soft
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SI-8050HFE
SI-8050HFE
SSJ-03183A
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sjpa-l3
Abstract: No abstract text available
Text: 4-4 Schottky Barrier Diodes VRM V 60 90 IF (AV) (A) Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) Tstg (°C) VF (V) max IF (A) IR (mA) VR=VRM max IR(H) (mA) VR=VRM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)
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O-220F
O-220F2Pin
FMB-26
sjpa-l3
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Untitled
Abstract: No abstract text available
Text: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)
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SFPB-54
SFPB-64
SFPB-74
SPB-G34S
SPB-G54S
PB-76
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B 2306 BARRIER RECTIFIER
Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Text: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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VR-60SS
VR-61SS
B 2306 BARRIER RECTIFIER
diode RU 3B
FMQ2FU
RBV-406
UX-F5B
w 2206 schottky
fmv -30j
EZ0150
fmu 22 u
FMP-3FU
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Untitled
Abstract: No abstract text available
Text: 1-1-3 DC/DC Converter ICs SI-8000HD Series Surface-Mount, Separate Excitation Step-down Switching Mode •Features ■Absolute Maximum Ratings • Surface-mount package TO263-5 Symbol Ratings Unit • Output current: 5.5 A Input Voltage VIN 43 V • High efficiency: 83% (at TYP, Vo = 5 V)
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SI-8000HD
O263-5)
SI-8000HD
GMR32ER71H475KA88L
FMB-G16L
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SK 18752
Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,
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O03ED0
dete7837
H1-O03ED0-0805020NM
SK 18752
SK 18751
2SC5586
SI-18752
fn651
709332a
CTB-34D
SLA6102
SLA4052
SI 18751
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Untitled
Abstract: No abstract text available
Text: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)
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AG01A
AG01Y
AG01Z
FMB-29
FMB-29L
FMB-32
EL02Z
SFPB-66
SFPB-69
SFPB-72
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FMBG16
Abstract: No abstract text available
Text: SI-8008HD DC-to-DC Step-Down Converter Features and Benefits Description ▪ 5.5 A output current supplied in a small, surface mount power package ▪ High efficiency: 83% at VIN = 15 V, IO = 3.0 A,VO = 5 V ▪ Requires only seven external components optional soft
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SI-8008HD
FMBG16
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UX-F5B
Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Text: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100
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O-220F
RZ1030
RZ1040
RZ1055
RZ1065
RZ1100
RZ1125
RZ1150
UX-F5B
UX-F5B diode
RG-2A Diode
shv-30j
FMQ2FU
axial package
fmp2fur
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SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
SE012
SE090
SE140N
SE115N
diode
2SC5487
sta474a
8050e
SE110N
SLA-7611
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diode RU 3AM
Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)
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FMPG2F
Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Text: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in
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D01ED0
SFPJ-63
VR-60SS
SFPJ-73
VR-61SS
SFPL-52
SFPL-62
SFPM-52
FMPG2F
zener diode reference guide
diode MARKING 30J
MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR
diode hvr 1x
FMB-34M
sot23 3F mark
fmlg12
RBV SOT23
marking code RBV SOT23
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FMB-G19L
Abstract: EK 110 fmbg19l FMBG24H FMBG14 FMB-29 FMB-29L FMB-G14L FMB-39M FME-230A
Text: Schottky Barrier Diodes Package Part Number Surface Mount Axial 90 Frame-2Pin Center-tap Center-tap 100 IFSM A I F (AV) (A) Tj (°C) 50Hz IR (mA) IR (H) (mA) Tstg (°C) VF (V) max IF (A) VR = VRM max Half-cycle Sinewave Single Shot VR = VRM max Ta (°C)
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SFPB-59
FMB-G19L
EK 110
fmbg19l
FMBG24H
FMBG14
FMB-29
FMB-29L
FMB-G14L
FMB-39M
FME-230A
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