TD62318AFG
Abstract: TD62318APG arrays 5 transistor dip.16
Text: TD62318APG/AFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62318APG,TD62318AFG 4ch Low Input Active High-Current Darlington Sink Driver The TD62318APG and TD62318AFG are non-inverting transistor arrays which are comprised of four NPN darlington output stages
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TD62318APG/AFG
TD62318APG
TD62318AFG
TD62318AFG
TD62318APG
arrays 5 transistor dip.16
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TD62318AFG
Abstract: TD62318APG arrays 5 transistor dip.16
Text: TD62318APG/AFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62318APG,TD62318AFG 4ch Low Input Active High-Current Darlington Sink Driver The TD62318APG and TD62318AFG are non-inverting transistor arrays which are comprised of four NPN darlington output stages
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TD62318APG/AFG
TD62318APG
TD62318AFG
TD62318AFG
TD62318APG
arrays 5 transistor dip.16
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Untitled
Abstract: No abstract text available
Text: TD62318AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62318AP,TD62318AF 4CH LOW INPUT ACTIVE HIGH−CURRENT DARLINGTON SINK DRIVER The TD62318AP and TD62318AF are non-inverting transistor arrays which are comprised of four NPN darlington output stages
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TD62318AP/AF
TD62318AP
TD62318AF
TD62318AF
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Untitled
Abstract: No abstract text available
Text: TD62318APG/AFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62318APG,TD62318AFG 4ch Low Input Active High-Current Darlington Sink Driver The TD62318APG and TD62318AFG are non-inverting transistor arrays which are comprised of four NPN darlington output stages
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TD62318APG/AFG
TD62318APG
TD62318AFG
TD62318AFG
TD62318APG
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Untitled
Abstract: No abstract text available
Text: TD62318APG/AFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62318APG,TD62318AFG 4ch Low Input Active High-Current Darlington Sink Driver The TD62318APG and TD62318AFG are non-inverting transistor arrays which are comprised of four NPN darlington output stages
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TD62318APG/AFG
TD62318APG
TD62318AFG
TD62318AFG
TD62318APG
TD62318AFGe
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HSOP16
Abstract: TD62318AF TD62318AP
Text: TD62318AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62318AP,TD62318AF 4CH LOW INPUT ACTIVE HIGH−CURRENT DARLINGTON SINK DRIVER The TD62318AP and TD62318AF are non-inverting transistor arrays which are comprised of four NPN darlington output stages
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TD62318AP/AF
TD62318AP
TD62318AF
TD62318AF
HSOP16
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HSOP16
Abstract: TD62318AF TD62318AP
Text: TD62318AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62318AP,TD62318AF 4CH LOW INPUT ACTIVE HIGH−CURRENT DARLINGTON SINK DRIVER The TD62318AP and TD62318AF are non-inverting transistor arrays which are comprised of four NPN darlington output stages
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TD62318AP/AF
TD62318AP
TD62318AF
TD62318AF
HSOP16
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TD62318AFG
Abstract: TD62318APG
Text: TD62318APG/AFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62318APG,TD62318AFG 4ch Low Input Active High-Current Darlington Sink Driver The TD62318APG and TD62318AFG are non-inverting transistor arrays which are comprised of four NPN darlington output stages
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TD62318APG/AFG
TD62318APG
TD62318AFG
TD62318AFG
TD62318APG
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PDF
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Untitled
Abstract: No abstract text available
Text: TD62318APG/AFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62318APG,TD62318AFG 4ch Low Input Active High-Current Darlington Sink Driver The TD62318APG and TD62318AFG are non-inverting transistor arrays which are comprised of four NPN darlington output stages
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TD62318APG/AFG
TD62318APG
TD62318AFG
TD62318AFG
TD62318APG
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M54661P
Abstract: 89COM M54661FP 8 pin 4v power supply ic pnp 8 transistor array
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54661P/FP 4-UNIT 80V/1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54661P and M54661FP are four-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54661P/FP
M54661P
M54661FP
opera04
89COM
8 pin 4v power supply ic
pnp 8 transistor array
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M54532P
Abstract: M54532FP common collector npn array
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits
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M54532P/FP
M54532P
M54532FP
common collector npn array
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits
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M54532P/FP
M54532P
M54532FP
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M54532P
Abstract: M54532FP
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> POWEREX M54532P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54532P and M54532FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits
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M54532P/FP
M54532P
M54532FP
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pnp darlington array
Abstract: pnp DARLINGTON TRANSISTOR ARRAY transistor array pnp M54567FP M54567P pnp 8 transistor array 8 pin 4v power supply ic npn darlington array
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54567P/FP 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54567P and M54567FP are four-circuit Darlington transistor arrays with clamping diodes. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely
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M54567P/FP
M54567P
M54567FP
pnp darlington array
pnp DARLINGTON TRANSISTOR ARRAY
transistor array pnp
pnp 8 transistor array
8 pin 4v power supply ic
npn darlington array
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CA3018
Abstract: an5296 CA3018A AN5296 Application note CA3018 "an5296 Application of the CA3018" AN5296 Application of the CA3018 an5296 ca3018 Darlington pair Darlington pair IC AN5296 Application of the CA3018 Integrated
Text: CA3018 S E M I C O N D U C T O R General Purpose Transistor Arrays March 1993 Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon n-p-n transistors on a common monolithic substrate.
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CA3018
CA3018
CA3018A
CA3018A
an5296
AN5296 Application note CA3018
"an5296 Application of the CA3018"
AN5296 Application of the CA3018
an5296 ca3018
Darlington pair
Darlington pair IC
AN5296 Application of the CA3018 Integrated
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AN5296 Application note CA3018
Abstract: CA3018 an5296 Harris CA3018 AN5296 Application of the CA3018 "Application of the CA3018" AN5296 application note an5296 ca3018 CA3018A AN5296 Application of the CA3018 Integrated
Text: S E M I C O N D U C T O R CA3018, CA3018A NS EW DESIG FOR N MENDED OM November 1996 NOT REC General Purpose Transistor Arrays Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate.
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CA3018,
CA3018A
CA3018
CA3018A
CA3018
500MHz
AN5296 Application note CA3018
an5296
Harris CA3018
AN5296 Application of the CA3018
"Application of the CA3018"
AN5296 application note
an5296 ca3018
AN5296 Application of the CA3018 Integrated
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pnp DARLINGTON TRANSISTOR ARRAY
Abstract: pnp darlington array PNP DARLINGTON ARRAYS pnp 8 transistor array high hfe transistor darlington array pnp sta471a sib1044d STA434A transistor array
Text: Surface Mount Transistor Arrays SD Series Type No. Equivalent Circuit 2 R1 R2 SDA01 4 1 6 3 15,16 7 11,12 R1 : 4kΩtyp SDC01 13,14 11,12 3 5 7 2 4 15,16 1 –60 –1.5 (–2.5A pulse) 2000 to 12000 –1.4 max PNP darlington transistor array (Surface mount type of STA472A)
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STA472A)
SDA01
100typ
SDC01
STA412A)
SDC02
00typ
100typ
200typ
SDH03
pnp DARLINGTON TRANSISTOR ARRAY
pnp darlington array
PNP DARLINGTON ARRAYS
pnp 8 transistor array
high hfe transistor
darlington array pnp
sta471a
sib1044d
STA434A
transistor array
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AN5296 Application note CA3018
Abstract: AN5296 Application of the CA3018 Integrated
Text: CA3018, CA3018A January 1999 File Number General Purpose Transistor Arrays Features The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. • Matched Monolithic General Purpose Transistors Two of the four transistors are connected in the Darlington
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CA3018,
CA3018A
CA3018
CA3018A
AN5296 Application note CA3018
AN5296 Application of the CA3018 Integrated
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AN5296 Application note CA3018
Abstract: AN5296 Application of the CA3018 Integrated AN5296 Application of the CA3018 an5296 Harris CA3018 CA3018 CA3018A AN5296 application note an5296 ca3018 Darlington pair IC
Text: CA3018, CA3018A January 1999 File Number 338.5 GeneraI Purpose Transistor Arrays Features The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. • Matched Monolithic General Purpose Transistors Two of the four transistors are connected in the Darlington
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OCR Scan
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CA3018,
CA3018A
CA3018
CA3018A
AN5296 Application note CA3018
AN5296 Application of the CA3018 Integrated
AN5296 Application of the CA3018
an5296
Harris CA3018
AN5296 application note
an5296 ca3018
Darlington pair IC
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Untitled
Abstract: No abstract text available
Text: 7 t}T7D7b DD1SDS3 74T Ordering number: EN 3298 LB1730 No.3298 Monolithic Digital IC SAiYO i High-Voltage, High-Current, _ Darlington Driver F u n c tio n s a n d F e a tu re s • Four independent high-voltage 85V , high-current (1.5A) Darlington driver
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LB1730
DIP20H
DIP16F
MFP30S
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ULQ2003B
Abstract: No abstract text available
Text: S G S-TH O U SO N Q7E Kv M T ^ULQ2003R g g rc l u ÜLQ20Q4R Ì D | O D 1 1 3 T fl 7 | 67c i7093 ° T- ^ s LINEAR INTEGRATED CIRCUITS DARLINGTON ARRAYS • S EV EN D A RLIN G TO N S PER PAC KA GE The four versions interface to all common logic families. • OUTPUT C U R R EN T 500mA P ER D R IV E R
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ULQ2003R
LQ20Q4R
i7093
500mA
600mA
ULQ20Q2R
ULQ2004R
ULQ2001R
4-25V
ULQ2003B
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AN5296 Application note CA3018
Abstract: CA3016 CA3018 12 Pin Metal Can CA3018A an5296 ca3018 an5296 AN5296 application note
Text: -GA3018, CA3018A lîC T Général Purpose Transistor Arrays November 1996 Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate.
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-GA3018,
CA3018A
CA3018
CA3018A
AN5296 Application note CA3018
CA3016
12 Pin Metal Can
an5296 ca3018
an5296
AN5296 application note
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TRANSISTOR 642
Abstract: ca301b transistor 123 DL CA3018 CA3018A ICAN-5296 529B I426 f425 CA3016
Text: Arrays E SOLID STATE 01 1 e | 3075001 DGlMSfifl 5 | CA3018, CA3018A General-Purpose Transistor Arrays Two Isolated Transistors and a Darlington-Connected Transistor Pair For Low-Power Applications at Frequencies from DC Through the VHF Range features: Matched monolithic general
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CA3018,
CA3018A
CA3018)
CA3018A
CA3018
I4260AI
92CS-M258RI
92CS-IS196
TRANSISTOR 642
ca301b
transistor 123 DL
ICAN-5296
529B
I426
f425
CA3016
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D 1413 transistor
Abstract: transistor a 1413 pnp DARLINGTON TRANSISTOR ARRAY STA434A STA471 high hfe transistor sib1044d npn 8 transistor array Transistor H03
Text: Surface Mount Transistor Arrays SD Series PNP darlington transistor array SDA01 -6 0 15.16 13 .1 4 11.12 Fh : 4 kU typ 15,16 SDC01 in I R 2 J l OOütyp 13^14 3 -. 9, 10 |_ 11.12 5o f . ( — 2.5A pulse) 2000 to 12000 — 1.4 max o Relays 0 S olenoids j 9, 10
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SDA01
STA472A)
SDC01
STA412A)
SDC02
5A100ns
4ki21yp
STA434A)
IB1044D
SDI01
D 1413 transistor
transistor a 1413
pnp DARLINGTON TRANSISTOR ARRAY
STA434A
STA471
high hfe transistor
sib1044d
npn 8 transistor array
Transistor H03
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