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    FOUR-QUADRANT PHOTO DETECTOR Search Results

    FOUR-QUADRANT PHOTO DETECTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    933HM/B Rochester Electronics LLC 933H - Dual Four Input Expander Visit Rochester Electronics LLC Buy
    933FM/B Rochester Electronics LLC 933 - Dual Four Input Expander Visit Rochester Electronics LLC Buy
    2903AFM/B Rochester Electronics LLC 2903A - Four-Bit Bipolar Microprocessor Slice Visit Rochester Electronics LLC Buy
    2903ADM/B Rochester Electronics LLC 2903A - Four-Bit Bipolar Microprocessor Slice Visit Rochester Electronics LLC Buy
    93S16/BEA Rochester Electronics LLC 93S16 - BCD Decade/Four Bit Binary Counters Visit Rochester Electronics LLC Buy

    FOUR-QUADRANT PHOTO DETECTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S239P

    Abstract: quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239
    Text: TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted


    Original     		S239P D-74025 quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239 PDF

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original     		CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E PDF

    UL268

    Abstract: MC1455P1 Smoke Detector ICs Motorola Smoke Detector MC1455BP1 MC1495D ul217 Diode Photo Smoke DEtector mc1455p1 motorola piezoelectric smoke detector
    Text: Other Analog Circuits In Brief . . . Other analog circuits are provided for special applications with both bipolar and CMOS technologies. These circuits range from the industry standard analog timing circuits and multipliers to specialized CMOS smoke detectors. These products provide key functions in a wide


    Original     		MC14467 UL217 UL268 MC145011 MC145012 MC145013 MC145017 P/648, DW/751G P/646, UL268 MC1455P1 Smoke Detector ICs Motorola Smoke Detector MC1455BP1 MC1495D ul217 Diode Photo Smoke DEtector mc1455p1 motorola piezoelectric smoke detector PDF

    MC1455P1

    Abstract: Motorola Smoke Detector MC1455BP1 MC1494P Smoke Detector ICs MC3456P Motorola Master Selection Guide MC14467 MC1495BP MC1494
    Text: Other Analog Circuits In Brief . . . A variety of other analog circuits are provided for special applications with both bipolar and CMOS technologies. These circuits range from the industry standard analog timing circuits and multipliers to specialized CMOS smoke


    Original     		MC14468 MC14467 UL217 UL268 MC145011 P/648, DW/751G MC145012 MC145013 MC145017 MC1455P1 Motorola Smoke Detector MC1455BP1 MC1494P Smoke Detector ICs MC3456P Motorola Master Selection Guide MC1495BP MC1494 PDF

    Photo diode TFK S 186 P

    Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
    Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission


    Original     		PDF

    BPW21 application note

    Abstract: BPW21 photodiode application lux meter 308-067 photodiode lumen uA741 linear photometer photodiode RS 308-067 564-037 303-674 UV Photodiode
    Text: Issued March 1999 298-4562 Data Pack F Photodiodes Data Sheet Basics of photometry Figure 2 This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required.


    Original     		PDF

    AD642JH

    Abstract: AD642K AD642KH transistor TO99 package
    Text: a Precision, Low Cost Dual BiFET Op Amp AD642 FEATURES Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Current Crosstalk: –124 dB @ 1 kHz Low Bias Current: 35 pA max Warmed Up Low Offset Voltage: 500 ␮V max Low Input Voltage Noise: 2 ␮V p-p


    Original     		MIL-STD-883B AD542 AD642 AD642 C632c AD642JH AD642K AD642KH transistor TO99 package PDF

    AD642JH

    Abstract: AD542 AD642 AD642J AD642K AD642KH AD642L AD642S AD7541 active maximally flat bandpass filter
    Text: a FEATURES Matched Offset Voltage Matched Offset Voltage Over Temperature Matched Bias Current Crosstalk: –124 dB @ 1 kHz Low Bias Current: 35 pA max Warmed Up Low Offset Voltage: 500 ␮V max Low Input Voltage Noise: 2 ␮V p-p High Open Loop Gain Low Quiescent Current: 2.8 mA max


    Original     		MIL-STD-883B AD542 AD642 AD642JH AD542 AD642J AD642K AD642KH AD642L AD642S AD7541 active maximally flat bandpass filter PDF

    AFE0064

    Abstract: No abstract text available
    Text: AFE0064 www.ti.com . SLAS672 – SEPTEMBER 2009 64 Channel Analog Front End for Digital X-Ray Detector


    Original     		AFE0064 SLAS672 AFE0064 PDF

    BPW21 application note

    Abstract: 308-067 uA741 linear photometer 564-037 BPW21 303-674 bpw21 op BPW21 equivalent uv Photocell bpw21 amplifier
    Text: Issued July 1998 298-4562 Data Pack F Photodiodes Data Sheet Basics of photometry Figure 2 This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required. Geometric principles


    Original     		PDF

    AFE0064

    Abstract: No abstract text available
    Text: AFE0064 www.ti.com . SLAS672 – SEPTEMBER 2009 64 Channel Analog Front End for Digital X-Ray Detector


    Original     		AFE0064 SLAS672 AFE0064 PDF

    AFE0064

    Abstract: CHN 920 diode CHN 920 diode in40 AFEXR0064 AFE0064IPBKR IN17 AFE0064IPBK circuit diagram of Zigbee Based Wireless Electron "x-ray detector"
    Text: AFE0064 www.ti.com . SLAS672 – SEPTEMBER 2009 64 Channel Analog Front End for Digital X-Ray Detector


    Original     		AFE0064 SLAS672 AFE0064 CHN 920 diode CHN 920 diode in40 AFEXR0064 AFE0064IPBKR IN17 AFE0064IPBK circuit diagram of Zigbee Based Wireless Electron "x-ray detector" PDF

    dlp afe 1000

    Abstract: AFE0064 diode IN47 IN2-3IN24 AFE 1000 DLP
    Text: AFE0064 www.ti.com . SLAS672 – SEPTEMBER 2009 64 Channel Analog Front End for Digital X-Ray Detector


    Original     		AFE0064 SLAS672 14m/clocks dlp afe 1000 AFE0064 diode IN47 IN2-3IN24 AFE 1000 DLP PDF

    BPW21 application note

    Abstract: 308-067 uA741 linear photometer Photodiode amplifier ceramic case large area quadrant photodiode photodiode RS 308-067 BPW21 fast photodiode Photodiode laser detector BPX-65 RS 308-067
    Text: Issued March 1997 232-3894 Data Pack F Photodiodes Data Sheet Basics of photometry Figure 2 This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required.


    Original     		PDF

    L14F1 PHOTOTRANSISTOR

    Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 PHOTOTRANSISTOR 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1 PDF

    L14F1 phototransistor

    Abstract: L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator LED55B 2N5777 A3-H11 2N5778 L14G3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 phototransistor L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator 2N5777 A3-H11 2N5778 L14G3 PDF

    L14F1 npn photo transistor

    Abstract: 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 npn photo transistor 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25 PDF

    1307 TRANSISTOR

    Abstract: H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 4N38A IC VS 1307 H11AA1 H11AA2 H11B2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? I I 20% 10% 1500 1500 ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 1307 TRANSISTOR H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 IC VS 1307 PDF

    H15B1

    Abstract: IC VS 1307 H11C1 photo interrupter module h13a1 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H 11A 10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER R A TIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? I I 20% 10% 1500 1500 ID nA MAX. BVc e o (VOLTS) MIN. 50 30 100 200 30 30 100 100


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 H15B1 IC VS 1307 H11C1 photo interrupter module h13a1 4N38 PDF

    photo interrupter module h13a1

    Abstract: 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2 H11D1 H11D2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER R A TIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? 1500 1500 I I 20% 10% ID nA MAX. BV c e o (VOLTS) MIN. 50 30 100 200 30 30 100 100


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 photo interrupter module h13a1 4N38 PDF

    opto isolator 4n35

    Abstract: GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 LED55B L14G1 phototransistor
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A l p = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . m W PAGE M A X . Ip CONT.


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 opto isolator 4n35 GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 L14G1 phototransistor PDF

    a4n33

    Abstract: H11B255 H13A2 H11C1 photo interrupter module photo interrupter module h13a1 4N38 4N38A H11A10 H11AA1
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 a4n33 H11B255 H13A2 H11C1 photo interrupter module photo interrupter module h13a1 4N38 PDF

    SEN 1327

    Abstract: CI06B pnp phototransistor H11A10 1307 TRANSISTOR D34C1 SCR ci06b "Photo Interrupter" dual transistor H11B1 4N38
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 1 1 2 2 2 2 I 5 1I 55 5 5 5 5 5 5 4 .4 .4 .4 1.0


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 SEN 1327 CI06B pnp phototransistor 1307 TRANSISTOR D34C1 SCR ci06b "Photo Interrupter" dual transistor 4N38 PDF

    H13B1

    Abstract: HIIAA1 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2 H11D1
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 H13B1 HIIAA1 4N38 PDF