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    FQB50N06 Search Results

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    FQB50N06 Price and Stock

    onsemi FQB50N06TM

    MOSFET N-CH 60V 50A D2PAK
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    FQB50N06TM Digi-Reel 1
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    Newark FQB50N06TM Reel 800
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    onsemi FQB50N06LTM

    MOSFET N-CH 60V 52.4A D2PAK
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    FQB50N06LTM Digi-Reel 1
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    Fairchild Semiconductor Corporation FQB50N06L

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    Bristol Electronics FQB50N06L 99
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    Quest Components FQB50N06L 79
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    Fairchild Semiconductor Corporation FQB50N06TM

    N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA FQB50N06TM 800
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    Win Source Electronics FQB50N06TM 10,400
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    FQB50N06 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQB50N06 Fairchild Semiconductor 60 V N-Channel MOSFET Original PDF
    FQB50N06 Fairchild Semiconductor QFET N-CHANNEL Scan PDF
    FQB50N06L Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original PDF
    FQB50N06L Fairchild Semiconductor QFET N-CHANNEL Scan PDF
    FQB50N06LTM Fairchild Semiconductor 60V N-Channel Logic level QFET Original PDF
    FQB50N06LTM Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 52.4A D2PAK Original PDF
    FQB50N06TM Fairchild Semiconductor 60V N-Channel QFET Original PDF

    FQB50N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB50N06L FQI50N06L FQB50N06LTM O-263

    FQB50N06L

    Abstract: FQI50N06L
    Text: QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB50N06L FQI50N06L FQI50N06L

    MOTOR DRIVER 48v 50A

    Abstract: No abstract text available
    Text: FQB50N06 / FQI50N06 N-Channel QFET MOSFET 60 V, 50 A, 22 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQB50N06 FQI50N06 FQI50N06 MOTOR DRIVER 48v 50A

    Untitled

    Abstract: No abstract text available
    Text: FQB50N06L / FQI50N06L N-Channel QFET MOSFET 60 V, 52.4 A, 21 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQB50N06L FQI50N06L FQI50N06L

    Untitled

    Abstract: No abstract text available
    Text: QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB50N06L FQI50N06L FQI50N06L

    Untitled

    Abstract: No abstract text available
    Text: QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB50N06 FQI50N06 FQI50N06

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB50N06L, FQI50N06L FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 24.5nC Typ.


    Original     		PDF FQB50N06L, FQI50N06L FQB50N06L

    Untitled

    Abstract: No abstract text available
    Text: FQB50N06L N-Channel QFET MOSFET 60 V, 52.4 A, 21 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		PDF FQB50N06L

    FQB50N06

    Abstract: FQI50N06
    Text: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB50N06 FQI50N06 FQI50N06

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ.


    Original     		PDF FQB50N06, FQI50N06 FQB50N06

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB50N06 FQI50N06 FQI50N06TU O-262

    FQB50N06L

    Abstract: FQI50N06L
    Text: QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB50N06L FQI50N06L FQI50N06L

    FQB50N06

    Abstract: FQI50N06
    Text: QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB50N06 FQI50N06 FQI50N06

    FQB50N06

    Abstract: FQI50N06
    Text: FQB50N06 / FQI50N06 April 2000 QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB50N06 FQI50N06 FQI50N06

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB50N06L FQI50N06L FQI50N06L FQI50N06LTU O-262

    FQB50N06L

    Abstract: FQI50N06L
    Text: FQB50N06L / FQI50N06L April 2000 QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB50N06L FQI50N06L FQI50N06L

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB50N06 FQI50N06 FQB50N06TM O-263

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB50N06 FQI50N06

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FQB50N06L

    Abstract: FQI50N06L
    Text: Q F E T N-CHANNEL FQB50N06L, FQI50N06L FEATURES 60 V BVqss = Advanced New Design r d s ON Avalanche Rugged Technology = 0.021 Q. ID = 52.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k |2-p a k


    OCR Scan     		PDF FQB50N06L, FQI50N06L FQB50N06L FQI50N06L

    FQB50N06

    Abstract: FQI50N06
    Text: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BV qss = 60V Advanced New Design RDS ON = 0.022Î2 Avalanche Rugged Technology lD = 50A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 31 nC (Typ.)


    OCR Scan     		PDF FQB50N06, FQI50N06 018i2 Dissipation06, D2PAK/TO-263 PAK/TO-263 FQB50N06 FQI50N06

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB50N06L, FQI50N06L FEATURES BVqss = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 24.5nC Typ.


    OCR Scan     		PDF FQB50N06L, FQI50N06L

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BVDSS = 60 V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31 nC Typ.


    OCR Scan     		PDF FQB50N06, FQI50N06 022Cl D2PAK/TO-263 D2PAK/TO-263