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Untitled Abstract: No abstract text available Text: QFET TM FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQB13N10 FQI13N10 FQI13N10TU O-262	PDF

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Abstract: No abstract text available
Text: QFET TM FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Original

FQB13N10 FQI13N10 FQI13N10TU O-262

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