Untitled
Abstract: No abstract text available
Text: PS-S100 Series Specifications SAVER ENERGY ENERGY SAVER OUTPUT OUTPUT Features: • Universal AC input / full range • Protections: Short Circuit / Overload / Overvoltage / Over temperature • ZCS/ZVS technology to reduce power dissipation • Cooling by free air convection
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PS-S100
PS-S10012
PS-S10024
PS-S10048
120mVp-p
150mVp-p
200mVp-p
20MHz
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Untitled
Abstract: No abstract text available
Text: PSW-120 Series Features: Specifications SAVER ENERGY ENERGY SAVER OUTPUT OUTPUT • Single and two phase wide input range 180 ~ 550VAC • Protections: Short Circuit / Overload / Over Voltage / Overtemperature • Cooling by free air convection • Built-in constant current limiting circuit
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PSW-120
550VAC
UL508
EN61000-6-2
EN50082-2)
PSW-12012
PSW-12024
PSW-12048
120mVp-p
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13005
Abstract: 13005R
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CDL13005R NPN PLASTIC POWER TRANSISTOR TO-220 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" Used in Energy Saving Lights and Power Switch Circuits
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CDL13005R
O-220
C-120
CDL13005RRev040706D
13005
13005R
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PDF
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CDL13005R NPN PLASTIC POWER TRANSISTOR TO-220 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" Used in Energy Saving Lights and Power Switch Circuits
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Original
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CDL13005R
O-220
C-120
CDL13005RRev040706D
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PDF
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APT94N65B2C3
Abstract: APT94N65B2C3G APT94N65B2
Text: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D
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APT94N65B2C3
APT94N65B2C3G*
APT94N65B2C3S
O-247
APT94N65B2C3
APT94N65B2C3G
APT94N65B2
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Untitled
Abstract: No abstract text available
Text: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated
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APT94N65B2C3
APT94N65B2C3G*
APT94N65B2C3
75DQ60
APT30DF60
O-247
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PDF
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75DQ60
Abstract: No abstract text available
Text: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated
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APT94N65B2C3
APT94N65B2C3G*
75DQ60
APT30DF60
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated
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APT94N65B2C3
APT94N65B2C3G*
APT94N65B2C3S
Continuo50
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS ON TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Dual die (parallel)
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APT94N60L2C3
APT94N60L2C3G*
O-264
APT94N60L2C3
75DQ60
APT30DF60
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diode 748 36A
Abstract: APT36N90BC3G apt30df60
Text: 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors TO -24 7 D3 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated
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APT36N90BC3G*
APT36N90BC3G
diode 748 36A
APT36N90BC3G
apt30df60
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PDF
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Untitled
Abstract: No abstract text available
Text: APT34N80B2C3 G APT34N80LC3(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 800V 34A 0.145Ω Super Junction MOSFET T-MAX COOLMOS TO-264 Power Semiconductors • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated
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APT34N80B2C3
APT34N80LC3
O-264
O-264
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors TO -24 7 D3 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated
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APT36N90BC3G*
APT30DF60
O-247®
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PDF
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Untitled
Abstract: No abstract text available
Text: 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET TO -24 7 D3 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extremedv/dt Rated • Dual die (parallel)
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APT36N90BC3G*
APT36N90BC3G
APT30DF60
O-247Â
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PDF
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dt600A
Abstract: No abstract text available
Text: 900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET TO -24 7 D3 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Dual die (parallel)
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APT36N90BC3G*
APT30DF60
O-247®
dt600A
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mil std 810f method 514.5 procedure 1
Abstract: CN104 267E
Text: GE Energy Preliminary Data Sheet 3A Digital Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc –14.4Vdc input; 0.45Vdc to 5.5Vdc output; 3A Output Current Features • Compliant to RoHS EU Directive 2002/95/EC Z versions • Compatible in a Pb-free or SnPb reflow environment (Z
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45Vdc
2002/95/EC
IPC-9592
3Vdc-14
exter1124619A,
CN11346682A,
CN1685299A,
CN1685459A,
CN1685582A,
mil std 810f method 514.5 procedure 1
CN104
267E
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APXW005A0X3-SRZ
Abstract: apxw005 non-isolated synchronous step down variable 12 V
Text: GE Energy Data Sheet 9-36V ProLynxTM 5A: Non-Isolated DC-DC Power Modules 9Vdc –36Vdc input; 3Vdc to 18Vdc output; 5A to 2.5A Output Current Features RoHS Compliant Applications • Compliant to RoHS EU Directive 2002/95/EC Z versions • Compatible in a Pb-free or SnPb reflow environment (Z
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36Vdc
18Vdc
2002/95/EC
IPC-9592
36Vdc)
CC109151916
CC109151908
CC109168852
APXW005A0X3-SRZ
apxw005
non-isolated synchronous step down variable 12 V
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mosfet SOA testing
Abstract: AN9409 RFP70N06 RFD3055 mosfet transistor checking and testing 407 transistor
Text: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated junction temperature. The circuits to maintain a fixed current
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mosfet SOA testing
Abstract: AN-7516 RFD3055 RFP70N06 TO-251 fairchild
Text: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Title N75 ubct AFE PERTING REA ESTG ITHUT EAT NK) utho ) eyords reor ) OC FO fark ageode seute OCEW fark Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated
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mosfet SOA testing
Abstract: AN-7516 RFD3055 RFP70N06 TO-251 fairchild
Text: Safe Operating Area Testing Without A Heat Sink Application Note Introduction Title N94 bt AFE ERING REA STG THUT AT NK utho eyrds er ) OCI O frk geode setes OCEW frk Most manufacturers of PowerMOS transistors specify the Safe Operating Area for their devices at 25oC case temperature and derate them linearly to zero at the maximum rated
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10N10EL
Abstract: 10EL fet 10n 10el 10N10E
Text: MTD10N10EL TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
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MTD10N10EL
MTD10N10EL/D
10N10EL
10EL fet
10n 10el
10N10E
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PDF
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10n10el
Abstract: 10N10 AN569 MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G dpak 369C
Text: MTD10N10EL TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient
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MTD10N10EL
MTD10N10EL/D
10n10el
10N10
AN569
MTD10N10EL
MTD10N10ELT4
MTD10N10ELT4G
dpak 369C
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PDF
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MTP6N6
Abstract: MTP6N60E equivalent MTP6N60E AN569 mtp6n mosfet transistor 400 volts.100 amperes
Text: TMOS E-FET. Power Field Effect Transistor MTP6N60E ON Semiconductor Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading
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MTP6N60E
r14525
MTP6N60E/D
MTP6N6
MTP6N60E equivalent
MTP6N60E
AN569
mtp6n
mosfet transistor 400 volts.100 amperes
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G15N60
Abstract: G15N60S1G NGTG15N60 NGTB15N60S1
Text: NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss. The
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NGTG15N60S1EG
NGTG15N60S1E/D
G15N60
G15N60S1G
NGTG15N60
NGTB15N60S1
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ferrite n27
Abstract: bipolar transistor tester germanium transistors NPN AN1628 GaAs tunnel diode germanium transistor pnp pnp germanium low power transistor POWER TRANSISTOR Cross AN-1628 Understanding Power Transistors Breakdown Parameters
Text: AN1628/D Understanding Power Transistors Breakdown Parameters Prepared by: Michaël Bairanzade http://onsemi.com APPLICATION NOTE TUNNELING EFFECT When the electrical field approaches 106 V/cm in Silicon, a significant current begins to flow by means of the band to
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AN1628/D
ferrite n27
bipolar transistor tester
germanium transistors NPN
AN1628
GaAs tunnel diode
germanium transistor pnp
pnp germanium low power transistor
POWER TRANSISTOR Cross
AN-1628
Understanding Power Transistors Breakdown Parameters
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