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    FREESCALE SEMICONDUCTOR BODY MARKING Search Results

    FREESCALE SEMICONDUCTOR BODY MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FREESCALE SEMICONDUCTOR BODY MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4066 spice model

    Abstract: LL1608-FH MBC13900 MBC13900T1
    Text: Freescale Semiconductor, Inc. Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package


    Original     		PDF MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 4066 spice model LL1608-FH MBC13900T1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking


    Original     		PDF MRFIC0970/D MRFIC0970 QFN-20) QFN-20 MRFIC0970 GSM900 QFN-20

    905 motorola

    Abstract: MRFIC0970 QFN-20 GSM900 MOTOROLA RF POWER SEMICONDUCTOR DETAIL freescale 352 2.6 v
    Text: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking


    Original     		PDF MRFIC0970/D MRFIC0970 QFN-20) QFN-20 MRFIC0970 GSM900 QFN-20 905 motorola GSM900 MOTOROLA RF POWER SEMICONDUCTOR DETAIL freescale 352 2.6 v

    MBC13720

    Abstract: MBC13720T1 low noise amplifier 0947
    Text: Freescale Semiconductor, Inc. Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking


    Original     		PDF MBC13720/D MBC13720 OT-363) MBC13720T1 OT-363 MBC13720 MBC13720T1 low noise amplifier 0947

    qfn-12

    Abstract: cdm 12.1 laser MC13820 QFN12 IP3 BOOST
    Text: Freescale Semiconductor, Inc. Technical Data MC13820/D Rev. 0, 06/2004 MC13820 Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 1345 QFN-12 Ordering Information Device Marking Package MC13820


    Original     		PDF MC13820/D MC13820 QFN-12) QFN-12 MC13820 qfn-12 cdm 12.1 laser QFN12 IP3 BOOST

    MC13770

    Abstract: PC13770FC QFN-12 LNA marking R0
    Text: Freescale Semiconductor, Inc. Product Preview MC13770PP/D Rev. 1, 11/2002 MC13770 W-CDMA LNA and Downconverter Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1345 (QFN-12) Ordering Information Device Device Marking Package


    Original     		PDF MC13770PP/D MC13770 QFN-12) PC13770FC QFN-12 MC13770 PC13770FC QFN-12 LNA marking R0

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking


    Original     		PDF MRFIC1870PP/D MRFIC1870 QFN-20) QFN-20 MRFIC1870 QFN-20

    MOTOROLA RF POWER SEMICONDUCTOR DETAIL

    Abstract: JEDEC QFN case outline MRFIC1870 QFN-20
    Text: Freescale Semiconductor, Inc. Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking


    Original     		PDF MRFIC1870PP/D MRFIC1870 QFN-20) QFN-20 MRFIC1870 QFN-20 MOTOROLA RF POWER SEMICONDUCTOR DETAIL JEDEC QFN case outline

    M13892AJ

    Abstract: MC13892VL MC13892AJVK MC13892 MC13892JVK MC13892VK M13892 MC13892J MC13892AJVL MC13892 registers
    Text: Document Number: MC13892ER Rev. 7.0, 10/2010 Freescale Semiconductor Errata MC13892, Silicon Errata Introduction This errata document applies to the following devices: Package 12x12 7x7 Part Number Functional Description Device Marking Mask ID Silicon Revision


    Original     		PDF MC13892ER MC13892, MC13892VL 12x12 DB00M29X MC13892JVL MC13892AJVL M13892AJ MC13892VL MC13892AJVK MC13892 MC13892JVK MC13892VK M13892 MC13892J MC13892AJVL MC13892 registers

    SECF036

    Abstract: MCF5214 MCF5216 MCF5216DE MCF5282 SECF038
    Text: MCF5216 Chip Errata Silicon Revision: All Supports: MCF5214, MCF5216 Summary of MCF5214/16 Errata All current MCF5214/16 devices are marked as L95M mask set. The date code on the marking can be used to determine which errata have been corrected on a particular device as shown in Table 1. The datecode format is


    Original     		PDF MCF5216 MCF5214, MCF5216 MCF5214/16 XXX0324 XXX0326 SECF036 MCF5214 MCF5216DE MCF5282 SECF038

    MCF528X

    Abstract: MCF5282 MCF5281 MCF5282DE L95M
    Text: MCF5282 Chip Errata Silicon Revision: All Supports: MCF5281, MCF5282 Summary of MCF528x Errata All current MCF5281/82 devices are marked as L95M mask set. The date code on the marking can be used to determine which errata have been corrected on a particular device as shown in Table 1. The datecode format is


    Original     		PDF MCF5282 MCF5281, MCF5282 MCF528x MCF5281/82 XXX0324 XXX0326 MCF5281 MCF5282DE L95M

    98ARL10519D

    Abstract: JESD51-5 JEDEC JESD51-8 BGA AN2409 JESD51-7 JESD51-51 jesd51 8 54ld JESD51-8
    Text: Freescale Semiconductor Application Note AN2409 Rev. 1.0, 12/2005 Small Outline Integrated Circuit Fine Pitch Package SOIC 1.0 Purpose This Application Note provides general package information including package dimensions, guidelines for printed circuit board (PCB) layout,


    Original     		PDF AN2409 98ARL10519D JESD51-5 JEDEC JESD51-8 BGA AN2409 JESD51-7 JESD51-51 jesd51 8 54ld JESD51-8

    465B

    Abstract: BC847 GSM1900 LP2951 MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking j8 smd transistor marking z8
    Text: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BR3 MRF18090BSR3 MRF18090BR3 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BSR3 smd transistor marking j8 smd transistor marking z8

    MRF373A

    Abstract: MRF373ALR1 MRF373ALSR1 MRF373AS
    Text: Freescale Semiconductor Technical Data Document Number: MRF373A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these


    Original     		PDF MRF373A MRF373ALR1 MRF373ALSR1 MRF373ALR1 MRF373A MRF373ALSR1 MRF373AS

    smd transistor marking z8

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18090B Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking z8

    MRF18085A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18085A Rev. 4, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18085AR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and


    Original     		PDF MRF18085A MRF18085AR3 MRF18085ALSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF18060B Rev. 7, 3/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MFR18060BLR3 MFR18060BLSR3 Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF18060B MFR18060BLR3 MFR18060BLSR3 MRF18060B

    MRF18030A

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18030A Rev. 7, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030A MRF18030ALR3 MRF18030ALSR3

    MRF19090

    Abstract: 465B CDR33BX104AKWS MRF19090R3 MRF19090SR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF19090 Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and


    Original     		PDF MRF19090 MRF19090R3 MRF19090SR3 MRF19090 465B CDR33BX104AKWS MRF19090SR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance


    Original     		PDF MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3

    "RF power MOSFETs"

    Abstract: marking Z4 MRF9130LR3 MRF9130L MRF9130LSR3 chip resistor 1206
    Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance


    Original     		PDF MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3 "RF power MOSFETs" marking Z4 MRF9130L MRF9130LSR3 chip resistor 1206

    smd transistor marking z1

    Abstract: marking TRANSISTOR SMD nf c4 MRF18060A
    Text: Freescale Semiconductor Technical Data MRF18060A Rev. 7, 1/2005 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF18060AR3 MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18060A GSM1805 MRF18060AR3 MRF18060ALSR3 smd transistor marking z1 marking TRANSISTOR SMD nf c4

    Untitled

    Abstract: No abstract text available
    Text: MRF9030 Rev. 5, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9030LR1 MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9030 MRF9030LR1 MRF9030LSR1

    MRF18085A

    Abstract: F 5M 365 R AN1955 GSM1800 MRF18085ALR3 MRF18085ALSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF18085A Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085ALR3 MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and


    Original     		PDF MRF18085A MRF18085ALR3 MRF18085ALSR3 MRF18085ALR3 MRF18085A F 5M 365 R AN1955 GSM1800 MRF18085ALSR3