IGBT 50 amp 1000 volt
Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode
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ultrafast igbt
Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching
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of169
1200-volt
CPWR-AN03,
ultrafast igbt
IGBT 50 amp 1000 volt
calculation of IGBT snubber
CPWR-AN03
Cree SiC MOSFET
12 VOLT 10 AMP smps
24 volt 10 amp smps
power diode
AN-11A
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PIC-005
Abstract: RC Snubber Design in EZBuck Circuit RC snubber mosfet design RC snubber diode snubber circuit for mosfet Snubber Design RC snubber AOZ1014 snubber capacitor for low frequency AOZ101x
Text: Application Note PIC-005 RC Snubber Design in EZBUCK Circuit Zach Zhang, Alpha & Omega Semiconductor, Inc. The AOZ101x EZBuck family IC are peak current-mode controlled step down regulators with integrated high-side P-channel MOSFET. A Schottky diode is used as low-side freewheeling device. It operates from a 4.5V to 16V input voltage range and
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PIC-005
AOZ101x
AOZ1013
AOZ1014
500kHz)
PIC-005
RC Snubber Design in EZBuck Circuit
RC snubber mosfet design
RC snubber diode
snubber circuit for mosfet
Snubber Design
RC snubber
snubber capacitor for low frequency
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siemens TLE-5206
Abstract: smd code book dual transistors SMD transistor code NC diode 5206 smd transistors code book transistor SMD g 28 smd code book transistor smd code book transistors siemens TLE-5206G transistor smd CF
Text: DC Motor Driver TLE 5206 SPT IC * Features ● ● ● ● ● ● ● Output current ± 4 A peak 5A) I/O error diagnostics Short-circuit proof Four-quadrant operation Integrated free-wheeling diodes Wide temperature range Break low and break high, if open load detection is
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P-DSO-20-10
P-TO220-7-8
5206GP
Q67006-A9239
5206G
Q67006-A9240
GPS05791
siemens TLE-5206
smd code book dual transistors
SMD transistor code NC
diode 5206
smd transistors code book
transistor SMD g 28
smd code book transistor
smd code book transistors
siemens TLE-5206G
transistor smd CF
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Untitled
Abstract: No abstract text available
Text: SKDH146/.-L140 DVXS DVVSR D=VS F= K AHC O <& ;.&4& E(74, 6%3 %0*.04%4- %',3(*.%0? D AUCC D AZCC <1- K YC N$? X[=5AHBTAZ¥PAHC ALCC ABCC X[=5AHBTAB¥PAHC Absolute Maximum Ratings Symbol Conditions Bridge - Rectifier SEMIPONTTM 6 AHC AZMC O O .]* *' K AC &-I -.0 AYCN I1J&(;
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SKDH146/.
-L140
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Untitled
Abstract: No abstract text available
Text: SKDH116/.L105 DVXS DVVSR D=VS F= K AAC O <& ;.&4& E(74, 6%3 %0*.04%4- %',3(*.%0? D AUCC D AZCC <1- K YC N$? X[=5AABTAZ¥PACM ALCC ABCC X[=5AABTAB¥PACM Absolute Maximum Ratings Symbol Conditions Bridge - Rectifier SEMIPONTTM 6 AAC ]MC O O .^* *' K AC &-I -.0 AYC I1J&(;
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SKDH116/.
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Untitled
Abstract: No abstract text available
Text: SKDH116/.L140 DVXS DVVSR D=VS F= K AAC O <& ;.&4& E(74, 6%3 %0*.04%4- %',3(*.%0? D AUCC D AZCC <1- K YC N$? X[=5AABTAZ¥PAHC ALCC ABCC X[=5AABTAB¥PAHC Absolute Maximum Ratings Symbol Conditions Bridge - Rectifier SEMIPONTTM 6 AAC ]MC O O .^* *' K AC &-I -.0 AYC I1J&(;
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SKDH116/.
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Untitled
Abstract: No abstract text available
Text: Midi Industrial Relay Type RMI. 4-5 5A Monostable • • • • • • • • • • High switching power Small size 4 poles configuration AC coils 6 to 230VAC DC coils 5 to 110VDC 3750VAC dielectric coil to contacts Standard with LED, Push with arm and Flag
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230VAC
110VDC
3750VAC
250VAC
30VDC
ZDM14A
ZC15/4A
ZC15/4
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MP6622
Abstract: bipolar power transistor data toshiba transistors equivalent Power MOSFET toshiba Power MOSFET, toshiba toshiba environment policy MP66 toshiba mosfet home Inverter circuit Three-phase inverter
Text: TOSHIBA Semiconductor Company | Transistors >>>Products SEMICONDUCTOR BULLETIN EYE JANUARY 2005 Vol.150 Data Sheets Bipolar Small-Signal Transistors Small-Signal FETs New MOSFET Module MP66 Series 500V/5A 6-in-1 module Combination Products of Differnet Type Devices
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00V/5A
MP6622
150ns
jp/eng/prd/tr/eye/eye200501
MP6622
bipolar power transistor data toshiba
transistors equivalent
Power MOSFET toshiba
Power MOSFET, toshiba
toshiba environment policy
MP66
toshiba mosfet
home Inverter circuit
Three-phase inverter
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SF5A400
Abstract: rectifier 400V 5A SF5A400H SF5A
Text: SF5A400H Ultrafast Recovery Rectifier 400V, 5A ULTRAFAST RECOVERY RECTIFIERS Features High voltage and high reliability Ultrafast reverse recovery time High speed switching Low power loss and High efficiency Pin Configuration Pin 1: Cathode
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SF5A400H
O-220F-2L
SF5A400H
KSD-D0Q014-003
SF5A400
rectifier 400V 5A
SF5A
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sf5a600h
Abstract: No abstract text available
Text: SF5A600H Ultrafast Recovery Rectifier 600V, 5A ULTRAFAST RECOVERY RECTIFIERS Features High voltage and high reliability Ultrafast reverse recovery time High speed switching Low power loss and High efficiency Pin Configuration Pin 1: Cathode
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SF5A600H
O-220F-2L
SF5A600H
KSD-D0Q022-002
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SF5A400
Abstract: No abstract text available
Text: SF5A400H Ultrafast Recovery Rectifier 400V, 5A ULTRAFAST RECOVERY RECTIFIERS Features High volt age and high reliabilit y Ult rafast reverse recovery t im e High speed swit ching Low pow er loss and High efficiency Pin Configuration Pin 1: Cathode
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SF5A400H
O-220F-2L
SF5A400H
KSD-D0Q014-003
SF5A400
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SF5A400H
Abstract: rectifier 400V 5A SF5A400 marking code cj SF5A SDB20D45 freewheeling diode 5A
Text: SF5A400H Semiconductor Ultrafast Recovery Rectifier 400V, 5A ULTRAFAST RECOVERY RECTIFIERS Features High voltage and high reliability Ultrafast reverse recovery time 1 High speed switching Low power loss and High efficiency 1 2 1 : Cathode
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SF5A400H
O-252
O-220F-2L
SF5A400H
KSD-D0Q014-002
rectifier 400V 5A
SF5A400
marking code cj
SF5A
SDB20D45
freewheeling diode 5A
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Untitled
Abstract: No abstract text available
Text: SF5A600H Ultrafast Recovery Rectifier 600V, 5A ULTRAFAST RECOVERY RECTIFIERS Features High volt age and high reliabilit y Ult rafast reverse recovery t im e High speed swit ching Low pow er loss and High efficiency Pin Configuration Pin 1: Cathode
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SF5A600H
O-220F-2L
SF5A600H
KSD-D0Q022-002
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Untitled
Abstract: No abstract text available
Text: SKDH146/.-L105 DVXS DVVSR D=VS F= K AHC O <& ;.&4& E(74, 6%3 %0*.04%4- %',3(*.%0? D AUCC D AZCC <1- K YC N$? X[=5AHBTAZ¥PACM ALCC ABCC X[=5AHBTAB¥PACM Absolute Maximum Ratings Symbol Conditions Bridge - Rectifier SEMIPONTTM 6 AHC AZMC O O .]* *' K AC &-I -.0 AYCN I1J&(;
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SKDH146/.
-L105
SKDH146-L105
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R16FFSSTAG
Abstract: R19FFSSPAGRB12 R16FRSSTAG r19F R19FFSSPAGRG12 R16FRNSTAG R19FFSSPAGRR12 EAO conformity R19FFSSPAGRW12
Text: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information R.series Switches and Indicators R.series Contents R.series Description . 3
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P channel 600v 30a IGBT
Abstract: step recovery diode 10a ultra fast diode EPE99 30A ultra fast diode 600v 10A ultra fast recovery diode fast recovery diode 1000v 10A fast recovery diode 600v 5A 30A, 600v DIODE Switching Characteristics of Fast Recovery Diodes
Text: C-Class Ultra Fast Recovery Diodes for High Speed Switching Applications M.T. Rahimo, S. R. Jones Power Division, Semelab plc., Coventry Road, Lutterworth, Leicestershire, LE17 4JB, United Kingdom. Tel + 44 1455 552505, Fax + 44 1455 552612, E-mail [email protected]
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June-97,
May-98,
P channel 600v 30a IGBT
step recovery diode
10a ultra fast diode
EPE99
30A ultra fast diode
600v 10A ultra fast recovery diode
fast recovery diode 1000v 10A
fast recovery diode 600v 5A
30A, 600v DIODE
Switching Characteristics of Fast Recovery Diodes
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L6386 schematic
Abstract: st l6384 applications AN1263 AN1299 L6384 L6385 L6386 L6387 L638X L6386 application
Text: AN1299 APPLICATION NOTE L638X TRICKS AND TIPS by Gian Paolo Meloncelli Topics covered: • Devices family • Internal diode structure • How to select Cboot • Parasitic elements in the half bridge topology • How to manage below ground voltage on out pin:
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AN1299
L638X
L6386:
L6384,
L6385,
L6386
L6387.
400mA
600mA.
L6386 schematic
st l6384 applications
AN1263
AN1299
L6384
L6385
L6387
L6386 application
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L6386 schematic
Abstract: 4 switch 3 phase inverter L6386 application AN1263 AN1299 L6384 L6385 L6386 L6387 STGW12NB60H
Text: AN1299 APPLICATION NOTE L638X TRICKS AND TIPS by Gian Paolo Meloncelli Topics covered: • Devices family • Internal diode structure • How to select Cboot • Parasitic elements in the half bridge topology • How to manage below ground voltage on out pin:
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AN1299
L638X
L6386:
L6384,
L6385,
L6386
L6387.
400mA
600mA.
L6386 schematic
4 switch 3 phase inverter
L6386 application
AN1263
AN1299
L6384
L6385
L6387
STGW12NB60H
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Untitled
Abstract: No abstract text available
Text: SKiiP 29ANB08V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Chopper - %2 : -%2 0 1 . # 0 )( 56+7 1 # ; 8 4 = Values Units &+ 8)( 59'7 '+ < 8( - > ?+ $$$ @ 8(+ 1 8)+ 5A97 '+
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29ANB08V1
29ANB08V1
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Untitled
Abstract: No abstract text available
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT UG8FT AND UG8GT ULTRAFAST SOFT RECOVERY RECTIFIER Reverse Voltage - 300 to 400 Volts Forward Current - 8.0 Amperes TQ-220AS FEATURES ♦ Plastic package has Underwriters Laboratories Flammability Classification 94V-0 ♦ Ideally suited for freewheeling diode power factor
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OCR Scan
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PDF
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TQ-220AS
O-220AC
MIL-STD-750,
300fis
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ESM2012DV
Abstract: No abstract text available
Text: 3QE D • 7 ^2 3 7 GG3DM2D 3 SGS-THOMSON S ESM2012DF ESM2012DV G S - THOMS ON " y / 3 3 ./a, 5 " NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE
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OCR Scan
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ESM2012DF
ESM2012DV
ESM2012DV
ESM2012DF
T-91-20
O-240)
PC-029«
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1GA1
Abstract: igbt power module FF 50 R 1200 KL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M HPM 6B 5A 120D M H PM 6B 10A 120D M H PM 6B 15A 120D Integrated Power Stage for 460 VAC Motor Drives Motorola Preferred Devices These VersaPower modules integrate a 3-phase inverter in a single convenient package. They are designed for 1.0, 2.0 and 3.0
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HPM6B5A120D
HPM6B10A120D
MHPM6B1SA120D
1GA1
igbt power module FF 50 R 1200 KL
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rectifier diode 6 amp 400 volt
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M H P M 7A 15A 60A Integrated Power Stage for 1.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A10E60DC3) The MHPM7A15A60A module integrates a 3-phase input
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MHPM7A10E60DC3)
MHPM7A15A60A
HPM7A15A60A
rectifier diode 6 amp 400 volt
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