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Abstract: No abstract text available
Text: BFS19 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)135õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.65 h(FE) Max. Current gain.225
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BFS19
Freq260MÃ
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Untitled
Abstract: No abstract text available
Text: MD8003 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V)60 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)625m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100
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MD8003
Freq260MÃ
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Untitled
Abstract: No abstract text available
Text: MPS6534S Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)600m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.140 h(FE) Max. Current gain.
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MPS6534S
Freq260M
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Untitled
Abstract: No abstract text available
Text: BC327 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)45 h(FE) Min. Current gain.100 h(FE) Max. Current gain.630
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BC327
Freq260MÃ
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Untitled
Abstract: No abstract text available
Text: MD8001 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)625m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100
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MD8001
Freq260MÃ
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MD8002
Abstract: No abstract text available
Text: MD8002 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V)50 V(BR)CBO (V) I(C) Max. (A)30m P(D) Max. (W)625m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100
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MD8002
Freq260MÃ
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