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Text: 2N403 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)180m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.
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Text: FZT957 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)1 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)300 V(CE)sat Max. (V).24 @I(C) (A) (Test Condition)1
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FZT957
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Text: BUX34 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BUX34
Freq85M
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NJM2073
Abstract: 1336L H0310
Text: APPLICATION NOTE H8/300H Tiny Series Creating a DTMF Generator Using PWM Introduction This document describes how to create a Dual Tone Multifrequency DTMF generator using a D/A converter with Pulse Width Modulation (PWM) to place calls from a general-purpose telephone.
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H8/300H
H8/36014
REJ06B0219-0100Z/Rev
NJM2073
1336L
H0310
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Abstract: No abstract text available
Text: ST4209A Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10nx @V(CBO) (V) (Test Condition)
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SFT-357
Abstract: No abstract text available
Text: SFT357 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)10m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)15uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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SFT357
Freq85
SFT-357
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Untitled
Abstract: No abstract text available
Text: 2SC3474 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC3474
Freq85M
req85M
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Abstract: No abstract text available
Text: 2SD809 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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keypad dtmf generator
Abstract: pwm Generator NJM2073
Text: APPLICATION NOTE H8/300H Tiny Series Creating a DTMF Generator Using PWM Introduction This document describes how to create a Dual Tone Multifrequency DTMF generator using a D/A converter with Pulse Width Modulation (PWM) to place calls from a general-purpose telephone.
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H8/300H
H8/36014
REJ06B0219-0200/Rev
keypad dtmf generator
pwm Generator
NJM2073
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Untitled
Abstract: No abstract text available
Text: ST4208A Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10nx @V(CBO) (V) (Test Condition)
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Text: ZTX957 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)330 I(C) Max. (A)1 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)1 @I(B) (A) (Test Condition)300m
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Text: SST1139 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)25
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Freq850M
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Abstract: No abstract text available
Text: 2SA1437 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)10m
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2SA1437
Freq85MÃ
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Text: FZT958 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)500m Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)300 V(CE)sat Max. (V).45 @I(C) (A) (Test Condition)500m
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Text: ZTX958 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)400 I(C) Max. (A)500m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).40 @I(C) (A) (Test Condition)500m
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Freq85M
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Abstract: No abstract text available
Text: 2N5771 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)50m Absolute Max. Power Diss. (W)625m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)8.0
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