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    FSF25 Search Results

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    FSF25 Price and Stock

    OptiFuse FSF-2.5A

    FUSE GLASS 2.5A 250VAC
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    OptiFuse FSF-250MA

    FUSE GLASS 250MA 250VAC
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    Fairview Microwave Inc SA8SFSF25W-50

    FXD ATTN JACK-JACK SMA 1.3
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    Fairview Microwave Inc SA18SFSF25W-03

    FXD ATTN JACK-JACK SMA 1.6
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    DigiKey SA18SFSF25W-03 Bag 1
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    Newark SA18SFSF25W-03 Bulk 1 1
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    Fairview Microwave Inc SA18SFSF25W-30

    FXD ATTN JACK-JACK SMA 1.6
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    DigiKey SA18SFSF25W-30 Bag 1
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    Newark SA18SFSF25W-30 Bulk 1 1
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    RS SA18SFSF25W-30 Bulk 3 Weeks 1
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    Find more FSF25 price and stock on Findchips.com

    FSF25 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSF250 Intersil 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250D Intersil 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250D1 Fairchild Semiconductor 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250D1 Intersil 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250D3 Fairchild Semiconductor Transistor Mosfet N-CH 200V 24A 3TO-254AA Original PDF
    FSF250D3 Intersil 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250R Intersil 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250R1 Fairchild Semiconductor 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSF250R1 Intersil 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250R3 Fairchild Semiconductor 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250R3 Intersil 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250R4 Fairchild Semiconductor 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSF250R4 Intersil 24A, 200V, 0.110 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF250R4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    FSF254D Intersil 18A, 250V, 0.170 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF254D1 Fairchild Semiconductor 18A, 250V, 0.170 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF254D1 Intersil 18A, 250V, 0.170 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSF254D1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    FSF254D3 Fairchild Semiconductor Transistor Mosfet N-CH 250V 18A 3TO-254AA Original PDF
    FSF254D3 Intersil 18A, 250V, 0.170 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF

    FSF25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic 4046

    Abstract: FSF250R1 FSF250R3 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R
    Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSF250D, FSF250R ic 4046 FSF250R1 FSF250R3 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R

    1E14

    Abstract: 2E12 FSF254R4 JANSR2N7407 Rad Hard in Fairchild for MOSFET TRANSISTOR 187
    Text: JANSR2N7407 Data Sheet [ /Title JANS R2N74 07 /Subject (Formerly Available As FSF25 4R4, Radiation Hardened, SEGR Resistant, N-Cha nnel Power MOSFETs) /Autho r () /Keywords (FSF2 54R4, Radiation Hardened, SEGR Resistant, N-Cha Formerly Available As FSF254R4,


    Original     		PDF JANSR2N7407 R2N74 FSF25 FSF254R4, 1E14 2E12 FSF254R4 JANSR2N7407 Rad Hard in Fairchild for MOSFET TRANSISTOR 187

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7407 Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF JANSR2N7407 FSF254R4,

    Untitled

    Abstract: No abstract text available
    Text: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSF254D, FSF254R

    1E14

    Abstract: 2E12 FSF254D FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3 ic 356
    Text: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSF254D, FSF254R 1E14 2E12 FSF254D FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3 ic 356

    fsf254

    Abstract: MIL-S-19500 1E14 2E12 FSF254D FSF254R
    Text: S E M I C O N D U C T O R FSF254D, FSF254R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 18A, 250V, rDS ON = 0.170Ω • Total Dose - Meets Pre-Rad Specifications to 100kRAD(Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original     		PDF FSF254D, FSF254R 100kRAD 36MeV/mg/cm2 O-254AA 1-800-4-HARRIS fsf254 MIL-S-19500 1E14 2E12 FSF254D FSF254R

    1E14

    Abstract: 2E12 FSF254R4 JANSR2N7407
    Text: JANSR2N7407 Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF JANSR2N7407 FSF254R4, 1E14 2E12 FSF254R4 JANSR2N7407

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7406 S E M I C O N D U C T O R September 1997 Formerly Available As FSF250R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7406 1-800-4-HARRIS

    DATA SHEET IC 4046

    Abstract: FS250R DATASHEET Of c i 4046 MIL-S-19500 fsf250 ic 4046 2E12 FSF250D FSF250R
    Text: S E M I C O N D U C T O R FSF250D, FSF250R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 24A, 200V, rDS ON = 0.110Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original     		PDF FSF250D, FSF250R 36MeV/mg/cm2 to1E14 O-254AA 1-800-4-HARRIS DATA SHEET IC 4046 FS250R DATASHEET Of c i 4046 MIL-S-19500 fsf250 ic 4046 2E12 FSF250D FSF250R

    FSF254D

    Abstract: 1E14 2E12 FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3
    Text: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSF254D, FSF254R FSF254D 1E14 2E12 FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3

    1E14

    Abstract: 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N74 bt A, 0V, 10 m, d rd, anwer OST utho eyrds errpoon, minctor, A, 0V, 10 m, d rd, Features Description • 24A, 200V, rDS(ON) = 0.110Ω The Discrete Products Operation of Intersil Corporation has


    Original     		PDF JANSR2N7406 FSF250R4 1E14 2E12 FSF250R4 JANSR2N7406 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7406 Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7406 FSF250R4

    1E14

    Abstract: 2E12 FSF250D FSF250D1 FSF250D3 FSF250R FSF250R1 FSF250R3
    Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSF250D, FSF250R 1E14 2E12 FSF250D FSF250D1 FSF250D3 FSF250R FSF250R1 FSF250R3

    Untitled

    Abstract: No abstract text available
    Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 24A, 200V, rDS ON = 0.110Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSF250D, FSF250R

    Untitled

    Abstract: No abstract text available
    Text: H a r r is S E M I C O N D U C T O R FSF250D, FSF250R " M • Single Event W rW • ■ Package Features • 24A, 200V, rDS ON = 0.110ft Total Dose ^ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 • M TO-254AA - Meets Pre-RAD Specifications to 100K RAD (Si)


    OCR Scan     		PDF FSF250D, FSF250R O-254AA 36MeV/mg/cm2 110ft 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: 09 FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 24A, 200V, rDS 0N = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSF250D, FSF250R MIL-STD-750, MIL-S-19500, 100ms, 500ms,

    Untitled

    Abstract: No abstract text available
    Text: a h a r r is S E M I C O N D U C T O R FSF254D, FSF254R " J " m * • ■ Radiation Hardened, SE G R Resistant N-Channel Power M OSFETs june 1997 F e a tu re s Package • 18A, 250V, rDS ON = 0.170i2 • Total Dose - Meets Pre-Rad Specifications to 100kRAD(Si)


    OCR Scan     		PDF FSF254D, FSF254R O-254AA 170i2 100kRAD 36MeV/mg/cm2 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 24A, 200V, r DS 0 N = 0.11 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSF250D, FSF250R MIL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: S3 FSF250D, FSF250R June 1997 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 24A, 200V, rDS o N = 0.110£i TO-254AA • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF FSF250D, FSF250R O-254AA 36MeV/mg/cm2 to1E14 1-800-4-HARRIS

    Rad hard MOSFETS in Harris

    Abstract: No abstract text available
    Text: JANSR2N7406 S W A« Formerly FSF250R4 24A, 200V, 0.110 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 24A, 200V, Td s ON) = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSF250R4 JANSR2N7406 MIL-STD-750, MIL-S-19500, 100ms; 500ms; Rad hard MOSFETS in Harris

    BU271

    Abstract: IRF540 24334 FSN0920
    Text: Microsemi N-Channel MOSFETs Part Number ! IRFZ40 ! BU271 i FSN1606 FSF2506 FSF2606 ! IRFZ34 FSE3506 MSAER45N06A : IRFZ44 IRFZ48 MSAEZ58N06A 1 MSAFZ58N06A MSAFX76N07A ! MSAEX150N07E IRF510 1IRF520 IRF530 FSN1410 FSF2210 FSF2510 IRF540 FSE3510 MSAER38N10A MSAFR38N10A


    OCR Scan     		PDF O-220 O-257 O-254 O-258 BU271 IRF540 24334 FSN0920

    Untitled

    Abstract: No abstract text available
    Text: h a r r is S E M I C O N D U C T O R FSF250D, FSF250R " M a W • • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Package • 24A, 200V, rDS ON = 0.110£1 • Total Dose • Single Event TO-254AA - M eets Pre-RAD Specifications to 100K RAD (Si)


    OCR Scan     		PDF FSF250D, FSF250R O-254AA 1-800-4-HARRIS

    250JIS

    Abstract: No abstract text available
    Text: GBü à ttm FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 18A, 250V, rDS 0N = 0.170Q The Discrete Products Operation of Harris Semiconductor has developed a series ot Radiation Hardened MOSFETs


    OCR Scan     		PDF FSF254D, FSF254R 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, 100ms; 500ms; 250JIS

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7407 S em iconductor Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 1998 File N um ber 4636 Features • 18A, 250V, rog oi\| = 0.170Q • Total Dose The Discrete Products Operation of Harris Semiconductor


    OCR Scan     		PDF JANSR2N7407 FSF254R4, 1-800-4-HARRIS