BFY182
Abstract: No abstract text available
Text: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • Hermetically sealed microwave package • fT = 8GHz F = 2.4dB at 2GHz • esa Space Qualified
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BFY182
BFY182
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d marking Micro-X
Abstract: BFY450 RF TRANSISTOR NPN MICRO-X
Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz
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BFY450
19dBm
25-Line
Transistor25
QS9000
d marking Micro-X
BFY450
RF TRANSISTOR NPN MICRO-X
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BFY181
Abstract: No abstract text available
Text: BFY181 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz
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BFY181
Q62702F1607
QS9000
BFY181
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Q62702F1609
Abstract: No abstract text available
Text: BFY183 HiRel NPN Silicon RF Transistor • • • • HiRel Discrete and Microwave Semiconductor 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz
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BFY183
BFY183
Q62702F1609
Q62702F1713
QS9000
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BFY182
Abstract: No abstract text available
Text: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.4 dB at 2 GHz •
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BFY182
Q62702F1608
QS9000
BFY182
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Untitled
Abstract: No abstract text available
Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • • fT= 6,5 GHz F = 3 dB at 2 GHz 4
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BFY196
BFY196
Q62702F1684
QS9000
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BFY181
Abstract: No abstract text available
Text: BFY181. HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.2 dB at 2 GHz
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BFY181.
BFY181
BFY181
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microwave transistor bfy193
Abstract: No abstract text available
Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • • fT= 8 GHz F = 2.3 dB at 2 GHz 4
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BFY193
BFY193
Q62702F1610
QS9000
microwave transistor bfy193
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microwave transistor bfy193
Abstract: BFY193
Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = 2.3 dB at 2 GHz • Space Qualified
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BFY193
Q62702F1610
QS9000
microwave transistor bfy193
BFY193
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BFY193
Abstract: BFY183
Text: BFY183 HiRel NPN Silicon RF Transistor • • • • HiRel Discrete and Microwave Semiconductor 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz
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BFY183
Q62702F1609
QS9000
BFY193
BFY183
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Q971
Abstract: BFY180
Text: BFY180 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. • Hermetically sealed microwave package • fT= 6,5 GHz F = 2.6 dB at 2 GHz • Space Qualified
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BFY180
Q97301013
QS9000
Q971
BFY180
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A03 transistor
Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
Text: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz
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Q62702F1610
Q62702F1701
BFY193
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
Q62702F-1610
a03 dbm
microwave transistor bfy193
24 marking code transistor
K 193 transistor
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UPA76ha
Abstract: 2SC2291 uPA49A 2AD149 MA7809 MP2060-6 B1181MP BFX10 HA7808 2N4009
Text: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE (V) Ic Max (A) fT (Hz) PD Max (W) Mati. Description Package Style NPN Monolithic Pairs, (Co nt' d) 5 10 BFY83 BFY83 BFY83 2N3517 2N3517 MD8003 UPA76HA AD813 2N4044 MP312 ~S~;:~A 15
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BFY83
2N3517
MD8003
UPA76HA
AD813
2N4044
MP312
2SC2291
uPA49A
2AD149
MA7809
MP2060-6
B1181MP
BFX10
HA7808
2N4009
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Untitled
Abstract: No abstract text available
Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Hermetically sealed microwave package Transition Frequency fT = 20 GHz 3 1 2 Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz
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BFY450
19dBm
25-Line
Transistor25
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A03 transistor
Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
Text: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz
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Q62702F1609
Q62702F1713
BFY183
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
BFy 90 transistor
microwave transducer
marking code microwave
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Untitled
Abstract: No abstract text available
Text: BFY183 HiRel NPN Silicon RF Transistor • 4 3 1 2 HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz
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BFY183
BFY183
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BFy 90 transistor
Abstract: No abstract text available
Text: BFY 183 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at co currents from 2mA to 30mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.3 dB at 2 GHz • esa Space Qualified
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A03 transistor
Abstract: BFY280
Text: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥
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Q97302026
Q97111414
BFY280
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package 4 3 1 2 fT= 6,5 GHz F = 3 dB at 2 GHz
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BFY196
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marking K "micro x"
Abstract: MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450
Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB = 19 dbm 1.8 GHz Max. available gain Gma = 16 dB at 1.8 GHz • Hermetically sealed microwave package • Transitor frequency fT = 20 GHz
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BFY450
Transistor25
marking K "micro x"
MICROWAVE TRANSITOR
transistor "micro-x" "marking" 3
GHZ micro-X Package
BFY450
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marking A04
Abstract: BFY181 p 181 V Q62702F1715
Text: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz
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Q62702F1607
Q62702F1715
BFY181
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
marking A04
p 181 V
Q62702F1715
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on semiconductor marking code A04
Abstract: marking A04 C BFY182
Text: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz
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Q62702F1608
Q62702F1714
BFY182
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
on semiconductor marking code A04
marking A04 C
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A03 transistor
Abstract: microwave transducer BFY196 BFY 36 transistor
Text: HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz
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Q62702F1684
BFY196
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
microwave transducer
BFY 36 transistor
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BFY193
Abstract: No abstract text available
Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package 4 3 1 2 fT= 8 GHz F = 2.3 dB at 2 GHz
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BFY193
BFY193
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