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    FTL SPECIFICATION Search Results

    FTL SPECIFICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D82C284-8 Rochester Electronics LLC 82C284 - Processor Specific Clock Generator, 16MHz, CMOS, CDIP18 Visit Rochester Electronics LLC Buy
    D82C284-12 Rochester Electronics LLC 82C284 - Processor Specific Clock Generator, 25MHz, CMOS, CDIP18 Visit Rochester Electronics LLC Buy
    TCM3105NL Rochester Electronics LLC TCM3105NL - FSK Modem, PDIP16 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC AM79865 -Physical Data Transmitter Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC AM79866A - Physical Data Receiver Visit Rochester Electronics LLC Buy

    FTL SPECIFICATION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Customer Information Sheet -DIM 'F'- -DIM 'A'- -DIM I IF IN DOUBT - ASK | g | NOT TO SCALE No. OF CONTACTS P A R T No. 'B'- •DIM 'C '±0. 20- ftl ftl ftl ftl ftl ftl ftl [pIP[p[p[j| IPIP SINGLE C ENT R A L L Y O N 09 T O 25 W A Y S | DIM 'A' DIM ' B '


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    H40-600XX46 M40-6000946 M40-600XX46 PDF

    1-800-SAMTEC-9

    Abstract: No abstract text available
    Text: F-203-1 FTL–25–T–12 FLEX TEST LINKS FTL, TTL, HTL SERIES SPECIFICATIONS For complete specifications see www.samtec.com?FTL, www.samtec.com?TTL or www.samtec.com?HTL, Terminal: FTSH, TMM or TSM Series Socket: SFMC, SMM or SSM Series Cable: 1 oz. rolled annealed copper


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    F-203-1 1-800-SAMTEC-9 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59S6408/04FT/FTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDX4-BANKx8-BIT SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDx4-BANKx4-BIT SYNCHRONOUS DYNAMIC RAM DESCRIPTION The TC59S6408FT/FTL and TC59S6404FT/FTL are CMOS synchronous dynamic random access


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    TC59S6408/04FT/FTL-80 152-WORDX4-BANKx8-BIT 304-WORDx4-BANKx4-BIT TC59S6408FT/FTL TC59S6404FT/FTL PDF

    FTR 02

    Abstract: TB133H 1f0f
    Text: Digital Transistors FTR • FTL • ATR • ATV • SPT Composite transistors with built-in resistors. In addition to FTR and FTL and ATR and ATV and SPT package variations, internal resistor variations are available for specific applications to meet wide needs.


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    100mA DTA123E DTA123EAA. FTR 02 TB133H 1f0f PDF

    2SD2175

    Abstract: No abstract text available
    Text: T ransistors FTR • FTL Low profile flat-package for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Application V ceo V FTL FTR 2SC1613A Driver Low VcE(sat) Indicator Driver High Voltage SW Darlington


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    2SA937ALN 2SB821 2SC1613A 2SC2021LN 2SA785 2SA937A 2SC2021 2SC4775 2SA874 2SA881 2SD2175 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors FTR • FTL Low profile flat-package for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package FTR Application VCEO V FTL I * V CES ÄSiVcER Part No. 2SA937ALN 2SB821 Lew Noise 2SC1613A Drivor


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    2SA937ALN 2SB821 2SC1613A PDF

    2S6822

    Abstract: 2s6822 TRANSISTOR 2sa790 2sc2673 2SC2021 2SC4040 2SA1554 2SA1561A A2SB1276 2SA937A
    Text: Transistors FTR • FTL Low profile flat-package for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Application FTR 1 VcEO V FTL ^VCES * * V CER Part No. Indicator Driver High Voltage SW (Ta = 25°C)


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    2SA937ALN 2SB821 2SB1276 2SC1613A A2SC4034 2SC2021LN 2SA785 2SA1554 2SA937A 2SA1561A 2S6822 2s6822 TRANSISTOR 2sa790 2sc2673 2SC2021 2SC4040 A2SB1276 PDF

    TA143E

    Abstract: DTC144 143ED ta124e TA114E TC114E DTC144EDA ftr 02
    Text: Digital Transistors FTR • FTL • ATR • ATV • SPT Composite transistors with built-in resistors. In addition to FTR and FTL and ATR and ATV and SPT package variations, internal resistor variations are available for specific applications to meet a wide range of needs.


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    100mA DTA123E DTA123EAA. DTA114GCIA DTA115G DTA124G DTA144G DTC114GQA DTC115GDA DTC124GDA TA143E DTC144 143ED ta124e TA114E TC114E DTC144EDA ftr 02 PDF

    IC 7555

    Abstract: ftr 02 2SA785 2SA1555 2sa155 7555 ic 2sb127 2sc2673 2SD2191 2SA1554
    Text: _ • j. « Transistors 70 2 0 1 1 1 Ü0 D7 1451 D I T ■ RHU FTR • FTL Low profile flat-pack for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Vceo V * V CES FTL FTR Application Low Noise -


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    2SA937ALN 2SB821 W2SB1276 2SC1613A W2SC4034 2SC2021LN 2SA785 2SA1554 2SA937A 2SA1561A IC 7555 ftr 02 2SA1555 2sa155 7555 ic 2sb127 2sc2673 2SD2191 PDF

    TC554001

    Abstract: No abstract text available
    Text: TOSHIBA TC554001 FL/FTL-70V#-85V#-1OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates


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    TC554001 FL/FTL-70V TC554001FL/FTL 304-bit 10mA/MHz 70jis OP32-P-525-1 TC554001FL/FTL-70V PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59S6416FT/FTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1,048,576-WORDSX4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6416FT/FTL is a CMOS synchronous dynamic random access memory organized as 1,048,576words X 4 bank X 16 bits. Fully synchronous operations are referenced to the positive edges of clock


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    TC59S6416FT/FTL-80 576-WORDSX4BANKSX 16-BITS TC59S6416FT/FTL 576words PDF

    MD2200

    Abstract: Diskonchip M-Systems MD diskonchip qnx TRUEFFS M-Systems 2MB flash disk diskonchip HARD DISK power supply diagram M-Systems diskonchip 2000 AP-DOC-10
    Text: DiskOnChip 2000 MD-2200 Data Sheet Features • Single chip plug-and-play FTL FlashDisk • Operates with FLite FAT FTL/Lite in O/S-less environments • 2 - 12MB capacity (24-72MB in 2H97) • EDC/ECC for high data reliability • Full boot capability


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    MD-2200 24-72MB 32-pin July-97 Windows95, perf00 DiskOnChip2000-EVB DiskOnChip2000-PIK DiskOnChip2000-GANG MD2200 Diskonchip M-Systems MD diskonchip qnx TRUEFFS M-Systems 2MB flash disk diskonchip HARD DISK power supply diagram M-Systems diskonchip 2000 AP-DOC-10 PDF

    Li-65

    Abstract: ta124e LI65 ta115 TC143Z
    Text: Digital Transistors FTR • FTL • ATR • ATV • SPT Composite transistors with built-in resistors. In addition to FTR and FTL and ATR and ATV and SPT package variations, internal resistor variations are available for specific applications to m eet a wide range of needs.


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    PDF

    ftl specification

    Abstract: AP-619 flash ftl intel FTL Logger Exchanging Data with FTL Systems intel DOC Intel AP-619
    Text: E AP-619 APPLICATION NOTE FTL Logger Exchanging Data with FTL Systems KIRK BLUM TECHNICAL MARKETING ENGINEER PETER LAM SOFTWARE ENGINEER August 1995 Order Number: 292174-001 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including


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    AP-619 ftl specification AP-619 flash ftl intel FTL Logger Exchanging Data with FTL Systems intel DOC Intel AP-619 PDF

    FTL70

    Abstract: No abstract text available
    Text: TOSHIBA TC554001 FL/FTL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288 WORDS DESCRIPTION X SILICON GATE CMOS 8 BIT STATIC RAM The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates


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    TC554001 FL/FTL-70 TC554001FL/FTL 304-bit OP32-P-525-1 32-P-400-1 FTL70 PDF

    2sd1469

    Abstract: No abstract text available
    Text: Transistors _ • j. « 70 2 0 1 1 1 Ü0 D7 1451 D I T ■ RHU FTR • FTL Low profile flat-pack for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Vceo V * V CES FTL FTR Application Low Noise -


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    2SB1276 2SC1613A 2SC4034 2SC2021LN 2sd1469 PDF

    2SA785

    Abstract: 2sc2673 2SB821 2SA937A 2SC4040 2SA1554 2SA1561A 2SA937ALN 2SC1613A 2SC2021
    Text: Transistors FTR • FTL Low profile flat-package for limited space applications. Taped type can be used on automated line. Bulk type is also available. Package Application FTR I VcEO V FTL ^VcES (Ta = 25°C) Pc (m W ) ^FE hFE v CE (V) Ranking code tc (mA)


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    2SA937ALN 2SB821 ir2SB1276 2SC1613A VV2SC4034 2SC2021LN 2SA785 2SA1554 2SA937A 2SA1561A 2sc2673 2SC4040 2SA1554 2SC2021 PDF

    FLASH TRANSLATION LAYER FTL

    Abstract: marking FAT NAND FLASH TRANSLATION LAYER FTL Wear Leveling in Single Level Cell NAND Flash Memory AN1820 an1823 Flash Translation Layer RAM 2112 256 word virtual small block NAND128R3A
    Text: AN1820 APPLICATION NOTE How to Use the FTL and HAL Sotfware Modules to Manage Data in Single Level Cell NAND Flash Memories This Application Note gives an overview of the architecture of the Flash Translation Layer FTL and Hardware Adaptation Layer (HAL) software modules, which allow operating systems to read and write to NAND


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    AN1820 FLASH TRANSLATION LAYER FTL marking FAT NAND FLASH TRANSLATION LAYER FTL Wear Leveling in Single Level Cell NAND Flash Memory AN1820 an1823 Flash Translation Layer RAM 2112 256 word virtual small block NAND128R3A PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59S6416FT/FTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1,048,576-WORDSX4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6416FT/FTL is a CMOS synchronous dynamic random access memory organized as 1,048,576words X 4 bank X 16 bits. Fully synchronous operations are referenced to the positive edges of clock


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    TC59S6416FT/FTL-80 576-WORDSX4BANKSX 16-BITS TC59S6416FT/FTL 576words PDF

    addressing mode in core i7

    Abstract: TC59S6416FT
    Text: TOSHIBA TENTATIVE TC59S6416FT/FTL-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 1,048,576-WORDSX4BANKSX 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59S6416FT/FTL is a CMOS synchronous dynamic random access memory organized as 1,048,576words X 4 bank X 16 bits. Fully synchronous operations are referenced to the positive edges of clock


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    TC59S6416FT/FTL-80 576-WORDSX4BANKSX 16-BITS TC59S6416FT/FTL 576words addressing mode in core i7 TC59S6416FT PDF

    TC554001

    Abstract: No abstract text available
    Text: TOSHIBA TC554001 FL/FTL-70V#-8 5 V #-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288 WORDS DESCRIPTION X SILICON GATE CMOS 8 BIT STATIC RAM The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates


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    TC554001 FL/FTL-70V TC554001FL/FTL 304-bit 10mA/MHz 70jis OP32-P-525-1 PDF

    FTL Logger Exchanging Data with FTL Systems

    Abstract: AP-619 flash ftl intel virtual small block ftl specification
    Text: E AP-619 APPLICATION NOTE FTL Logger Exchanging Data with FTL Systems August 1995 Order Number: 292174-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of


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    AP-619 32-bit FTL Logger Exchanging Data with FTL Systems AP-619 flash ftl intel virtual small block ftl specification PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC554001 FL/FTL-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288 WORDS DESCRIPTION X SILICON GATE CMOS 8 BIT STATIC RAM The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates


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    TC554001 FL/FTL-70L TC554001FL/FTL 304-bit 10mA/MHz OP32-P-525-1 TC554001FL/FTL-70L 32-P-400-1 HHO-21 PDF

    TC554001

    Abstract: No abstract text available
    Text: TOSHIBA TC554001 FL/FTL-70#-85#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001FL/FTL is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates


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    TC554001 FL/FTL-70 TC554001FL/FTL 304-bit 10mA/MHz OP32-P-525-1 PDF