200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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PDF
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7N60B equivalent
Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain
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7N60B-2X
7N60C-2X
16N60B2-3X
16N60C2-3X
30N60B2-4X
30N60C2-4X
40N60B2-5Y
40N60C2-5Y
60N60B2-7Y
60N60C2-7Y
7N60B equivalent
10n60b
ixgd
28N12
20N120
16N60C2
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PDF
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12n60c
Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM
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O-220
O-263
O-247
PLUS247
O-268
ISOPLUS247TM
O-264
20N30
28N30
30N30
12n60c
60n60 igbt
diode b242
31N60
ixgk50n60bu1
50n60bd1
Diode 12 b2
120n60
60N60
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PDF
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7N60P
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 ID25 = 7 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V VGS
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7N60P
03-21-06B
7N60P
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PDF
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7N60P
Abstract: No abstract text available
Text: PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 ID25 = 7 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V VGS
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7N60P
O-220
O-263
03-21-06B
7N60P
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PDF
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7N60P
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 7N60P IXTP 7N60P VDSS = 600 = 7 ID25 RDS on ≤ 1.1 V A Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 600 600
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7N60P
405B2
7N60P
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-Q Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60-Q
7N60-Q
7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-Tt
QW-R502-983.
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PDF
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7N60m
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-M Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60-M
7N60-M
7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TFt
QW-R502-996.
7N60m
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TF3-T
7N60L-TFt
QW-R502-076.
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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Original
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7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TF3-T
7N60L-TFt
QW-R502-076.
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PDF
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7n60f
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-F Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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Original
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7N60-F
7N60-F
7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60t
QW-R502-982.
7n60f
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PDF
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7N60G-TF3-T
Abstract: 7N60 7n60f 7n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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Original
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7N60-F/7N60-M/7N60-R
/7N60-Q)
QW-R502-076
7N60G-TF3-T
7N60
7n60f
7n60l
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi IXGA 7N60C IXGP 7N60C Maximum Ratings 600 = 1 MΩ V Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 14 A
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7N60C
O-220AB
O-263
728B1
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXGA 7N60BD1 IXGP 7N60BD1 HiPerFASTTM IGBT with Diode Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES VCES IC25 VCE sat tfi = 600 V = 14 A = 2.0 V = 150ns Maximum Ratings 600 600 V Continuous
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7N60BD1
150ns
O-220AB
O-263
728B1
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PDF
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Untitled
Abstract: No abstract text available
Text: IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series VCES IC25 VCE sat typ tfi = 600 V = 14 A = 2.0 V = 45 ns Preliminary Data Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R VGES Maximum Ratings 600 600 V
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7N60CD1
O-220AB
O-263
728B1
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PDF
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7N60G-TF3-T
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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Original
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7N60-F/7N60-M/7N60-R
/7N60-Q)
QW-R502-076
7N60G-TF3-T
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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Original
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7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TFt
QW-R502-076.
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60-R Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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Original
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7N60-R
7N60-R
7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-Tt
QW-R502-984.
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PDF
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7n60f
Abstract: 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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Original
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O-220
O-220F
7N60/7N60-R)
7N60-F/7N60-M/7N60-Q)
QW-R502-076
7n60f
7N60
7n60 mosfet
7n60b
OF 7N60
7N60A
power mosfet 200A
ISD74A
7N60G-x
TO-262 MOSFET
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PDF
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7n60f
Abstract: UTC7N60 7N60R 7N60G-TF3-T 7n60l 7N60
Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged
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Original
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O-220
O-220F
7N60/7N60-R)
7N60-F/7N60-M/7N60-Q)
QW-R502-076
7n60f
UTC7N60
7N60R
7N60G-TF3-T
7n60l
7N60
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PDF
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7N60C
Abstract: LI 20 AB
Text: AdvancedTechnical Information HiPerFAST IGBT Lightspeed™ Series V CES IXGA 7N60C IXGP 7N60C ^C25 V CE sat typ »„ Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V VC G R T,J = 2 5 °C to 1 5 0 °C ; RrCab = 1 MU 600 V V G ES Continuous ±20 V
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OCR Scan
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7N60C
7N60C
O-22QAB
O-263
LI 20 AB
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PDF
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7N60B
Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28
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OCR Scan
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30N30
28N30
4QN30
31N60
38N60
41N60
60N60
200N60
25N100A
7N60B
65A3
40N60A
IXGA 12N60C
200n60
ixgh 1500
IXG IGBT
ixgh
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PDF
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7N60C3
Abstract: 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor
Text: H G TP 7N60C3D, HGT1S 7N60C3D, HGT1S7N60C3DS H A R R IS S E M I C O N D U C T O R 1 4 A, 60 0V, U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t D i o d e s Features Packaging JEDEC TO-22QAB • 1 4A, 6 0 0 V at T c = 2 5 ° C
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OCR Scan
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7N60C3D,
HGT1S7N60C3DS
O-22QAB
O-262AA
HGTP7N60C3D,
HGT1S7N60C3D
HGT1S7N60C3DS
-800-4-H
7N60C3
7N60C3D
S7N60
g7N60C3D
Zener Diode LT 432
diode lt 823
S7N60C3D
600VU
NT 407 F power transistor
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PDF
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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OCR Scan
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O-220
O-263
O-247
28N30
30N30
40N30
2N100
8N100
6N100
12N10Q
120n60b
40N30BD1
32N50
7n60c
20N60BU1
40N60A
B-2160
200n60
12n60c
IXGH24N50B
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PDF
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