Project Report of fire alarm using IC 555 doc
Abstract: Project Report of fire alarm using IC 555 toshiba laptop battery pack pinout hp laptop battery pack pinout Project Report for fire alarm using IC 555 doc Project Report of fire alarm using IC timer ne 555 TMS320C5409 automatic heat detector project report smoke alarm using IC NE 555 hp laptop battery pinout
Text: T H E W O R L D L E A D E R I N D S P inside A N A L O G A N D FEBRUARY 2001 VOLUME 7 TM point DSPs E R 160 MHz CONSUM P 50% ON DSP DSPTMS320C5410A MHz TI Analog Applications Journal 60% 120 POW Nov. update Improved fixed- N E Back cover R RMA FO C Strategic
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TMS320C5410A
TMS320C5409A
TMS320C5000
w/244
Project Report of fire alarm using IC 555 doc
Project Report of fire alarm using IC 555
toshiba laptop battery pack pinout
hp laptop battery pack pinout
Project Report for fire alarm using IC 555 doc
Project Report of fire alarm using IC timer ne 555
TMS320C5409
automatic heat detector project report
smoke alarm using IC NE 555
hp laptop battery pinout
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IRF150CF
Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152
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BUZ349
SFN152
YTFP152
YTF152
IRFP152
RFH35Nl0
RFK35Nl0
PB125N60HM
PB125N60HP
IRF150CF
GENTRON
2SK747A
EUM159M
2SK798
EFM159M179
YTFP150
2SK747
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarTM High Speed IXGK 210N30PCT1 IGBT + PolarTM MOSFET VCES = 300 V = 210 A IC25 VCE sat ≤ 1.6 V C in Parallel For PDP Applications G E Maximum Ratings Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VGES Continuous
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210N30PCT1
O-264
IXGK210N30PCT1
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Abstract: No abstract text available
Text: Advance Technical Information PolarTM High Speed IXGK 210N30PBT1 IGBT + PolarTM MOSFET in Parallel VCES = 300 V = 210 A IC25 VCE sat ≤ 1.6 V C For PDP Applications G E Maximum Ratings Symbol Test Conditions VCES TJ = 25°C to 150°C 300 V VGES Continuous
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210N30PBT1
O-264
IXGK210N30PBT1
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IEC61249-2-21
Abstract: IPB015N04L JESD22 V8002
Text: Type IPB015N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications • N-channel, logic level
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IPB015N04L
PG-TO263-3
IEC61249-2-21
015N04L
IEC61249-2-21
JESD22
V8002
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4900 SIEMENS
Abstract: No abstract text available
Text: Advanced Technical Information IXTQ 120N15P IXTT 120N15P PolarHTTM Power MOSFET VDSS ID25 RDS on = = ≤ 150 V 120 A Ω 16 mΩ N-Channel Enhancement Mode Maximum Ratings TO-3P (IXTQ) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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120N15P
4900 SIEMENS
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IPP015N04N
Abstract: IPB015N04N IPB015N04 IEC61249-2-21 JESD22 PG-TO220-3 IPP015N04N G IPB015N04N G 015N04N
Text: IPP015N04N G Type IPB015N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 1.5 mΩ ID 120 A 1) • Qualified according to JEDEC for target applications
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IPP015N04N
IPB015N04N
IEC61249-2-21
PG-TO263-3
PG-TO220-3
015N04N
IPB015N04
IEC61249-2-21
JESD22
PG-TO220-3
IPP015N04N G
IPB015N04N G
015N04N
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DS99918C
Abstract: IXTP 220N04T2 220N04T2 IXTP220N04T2
Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA220N04T2 IXTP220N04T2 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient
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IXTA220N04T2
IXTP220N04T2
O-263
O-220
220N04T2
12-15-08-D
DS99918C
IXTP 220N04T2
IXTP220N04T2
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Untitled
Abstract: No abstract text available
Text: PolarHTTM HiPerFET Power MOSFET IXFH 120N15P IXFT 120N15P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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120N15P
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IXTQ170N10P
Abstract: IXTK170N10P IXTT170N10P
Text: IXTT170N10P IXTQ170N10P IXTK170N10P PolarTM Power MOSFET VDSS ID25 = 100V = 170A ≤ 9mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTT170N10P
IXTQ170N10P
IXTK170N10P
O-268
IXTT170N10P
170N10P
01-07-10-C
IXTQ170N10P
IXTK170N10P
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IXFP230N075T2
Abstract: IXFA230N075T2
Text: IXFA230N075T2 IXFP230N075T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 75V = 230A Ω ≤ 4.2mΩ TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C
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IXFA230N075T2
IXFP230N075T2
O-263
230N075T2
2-26-10-C
IXFP230N075T2
IXFA230N075T2
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ixtk120p
Abstract: No abstract text available
Text: IXTK120P20T IXTX120P20T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 200V - 120A Ω 30mΩ 300ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTK120P20T
IXTX120P20T
300ns
O-264
120P20T
ixtk120p
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120N25P
Abstract: PLUS247
Text: PolarHTTM HiPerFET Power MOSFET VDSS = 250 V ID25 = 120 A Ω RDS on ≤ 24 mΩ ≤ 200 ns trr IXFK 120N25P IXFX 120N25P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 250 V
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120N25P
70oCoulombs
120N25P
PLUS247
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IXFH120N20P
Abstract: IXFK120N20P 120N20
Text: IXFH120N20P IXFK120N20P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = 200V 120A Ω 22mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C
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IXFH120N20P
IXFK120N20P
200ns
O-247
120N20P
IXFH120N20P
IXFK120N20P
120N20
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MAX6485
Abstract: No abstract text available
Text: Advance Technical Information IXTQ 160N085T IXTA 160N085T IXTP 160N085T Trench Gate Power MOSFET VDSS ID25 = 85 V = 160 A Ω = 6.0 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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160N085T
160N085T
O-220
O-263
MAX6485
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DS16A
Abstract: No abstract text available
Text: Æ lltro n PRODUCT D EV I C ES , I NC . 200V. ABSOLUTE MAXIMUM RATINGS PARAMETER U N IT S SYMBOL DRAIN-SOURCE VOLTAGE VDSS 200 Vdc DRAIN-GATE VOLTAGE R g g - 1 . OMn VDGR 200 Vdc VGS ±20 Vdc ID 120 Ade DRAIN CURRENT PULSED 1DM 480 A TOTAL POWER D IS S IP A TIO N
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SDF120NA20
DS16A
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34984
Abstract: Si9105
Text: T em ic SÌ9105 Siliconix 1-W High-Voltage Switchmode Regulator Features • C C IT T C o m p a tib le • C u rren t-M o d e C o n tro l • L ow P ow er C o n su m p tio n less th a n 5 raW • • • • • 10- t o 120-V In p u t R an g e 200-V, 2 5 0 -m A M G S F E T
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10-to
250-mAMOSFET
Si9105
9105DJ
1N5819
1N4148
P-34984â
25M735
34984
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Untitled
Abstract: No abstract text available
Text: Order this document by MC33362/D M O TO R O LA High V oltage Sw itching Regulator T he M C 3 33 62 is a m on olithic high vo lta g e sw itch ing re g ulator th a t is spe cifica lly desig ned to o p era te from a rectified 120 VAC line source. This integrated circu it fe a tu re s an o n -c h ip 500 V /2.0 A S e n se F E T po w e r sw itch,
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MC33362/D
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n22K
Abstract: t3.15a 250v L5991A 07l v3 L5991 BCD60II
Text: L5991 L5991A PRIMARY CONTROLLER WITH STANDBY • ■ ■ ■ ■ ■ ■ ■ . ■ ■ ■ ■ . . C U R R E N T -M O D E C O N TR O L PW M SW ITC H IN G F R E Q U E N C Y UP TO 1 M Hz LOW STA R T-U P C U R R E N T < 120|xA H IG H -C U R R EN T O U TP U T D R IVE SUITABLE
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L5991
L5991A
100ns
DIP16ANDS016
BCD60II
MULTIPOW23
006inch)
n22K
t3.15a 250v
L5991A
07l v3
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F10N12L
Abstract: F10N15L 10N15L F10N12 RFP10N15L F10N15 RFP10N12L 10n15 RFM10N12L RFM10N15L
Text: Logic-Level Power MOSFETs_ RFM10N12L, RFM10N15L, RFP10N12L, RFP10N15L File N u m be r 1559 Power Logic Level MOSFETs N-Channel Logic Level Power Field-Effect Transistors L2 FET TERMINAL DIAGRAM 10 A, 120 V — 150 V rDsioni: 0.3 f)
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RFM10N12L,
RFM10N15L,
RFP10N12L,
RFP10N15L
92CS-3374I
RFM10N12L
RFM10N15L
RFP10N12L
RFP10N15L*
F10N12L
F10N15L
10N15L
F10N12
RFP10N15L
F10N15
10n15
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3821J
Abstract: No abstract text available
Text: Tem ic VN1206L/M, VN1210M Se m i c f l n d u c K i r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V ) r DS(on) VN1206M Vcs(ih)(V) I d (A ) 0.8 to 2 0.23 6 @ V o s - 10 V 0.8 to 2 0.26 10 @ V q s = 2.5 V 0.8 to 2
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VN1206L/M,
VN1210M
1206L
VN1206M
VNI21QM
P-38211--
15-Aug-94
O-226AA)
3821J
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VN1206L
Abstract: VNI210M VN1206M VN1210M
Text: Tem ic VN1206L/M, VN1210M S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number *DS on V(BR)DSS M i n (V ) VN1206L VN1206M 120 VN1210M Features Low On-Resistance: 3.8 Q Low Threshold: 1.4 V Low Input Capacitance: 35 pF
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vn1206l/m,
vn1210m
VN1206L
VN1206M
VNI210M
O-226AA)
P-38211â
15-Aug-94
VNI210M
VN1206M
VN1210M
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RFK30N12
Abstract: RFK30N15
Text: Standard Power MOSFETs RFK30N12, RFK30N15 File Number 1455 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM D 30 A, 120 V - 150 V ros on =0.075 Q Features: • SO A is power-dissipation lim ited
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RFK30N12,
RFK30N15
9ZCS-337
RFK30N12
RFK30N15*
B2CS-376S7
AN-7254
AN-7260.
RFK30N15
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ta9230
Abstract: RFM15N12 RFM15N15 RFP15N12 RFP15N15 ta9195
Text: Standard Power MOSFETs RFM15N12, RFM15N15, RFP15N12, RFP15N15 File N u m be r 1443 N-Channel Enhancement-Mode Power Field-Effect Transistors 15 A, 120 V — 150 V rDs on : 0.15 fi Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds
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RFM15N12,
RFM15N15,
RFP15N12,
RFP15N15
RFM15N12
RFM15N15
RFP15N12
RFP15N15*
ta9230
RFP15N15
ta9195
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