Untitled
Abstract: No abstract text available
Text: SAMSUNG S E M I C ON DUCTOR INC D2 KS54HCTLS /? /¡T */ KS74HCTLS U U D E i 7Tt,414E 00DL:S73 Octal 3-State Bus Transceivers with Registers 7-", s ' a. ' 3 j Preliminary Specifications FEATURES • • • • • • • • • • DESCRIPTION . Independent Registers and Enables for A and B Buses
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KS54HCTLS
KS74HCTLS
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 02 D E ^ 7TL4142 DDDbElb Octal 3 State Bus Transceivers with Registers KS54ÄHCT f ì £ Z Ì 7 f ì i Z Ò KS74AHCT 0 0 Preliminary Specifications FEATURES DESCRIPTION • • • • These devices consist of bus transceiver circuits. D-type
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7TL4142
KS74AHCT
-54/74ALS
7Tb414S
90-XO
14-Pin
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMI CONDUCTOR INC MPSH17 IME O | 7*11,4142 0007302 *1 | NPN EPITAXIAL SILICON TRANSISTOR CATV TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (T ,= 2 5 °C )
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MPSH17
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single mode optical fiber 1550 nm
Abstract: Telcordia GR-20-CORE optical fiber cable G.652 GR-20-CORE samsung ribbon samsung ribbon vs Samsung tube tv G.652 samsung IEC793 Fiber low chromatic dispersion
Text: Samsung Electronics Fiberoptics products Single Mode Optical Fiber SAMSUNG Single Mode optical fiber is d esigned and manufactured with a matched cladding, step index profile, using Samsung’s advanced MCVD process. This design provides versatile in applications for long haul, regional and
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1130E,
1-877-ssoptic/1-877-776-7842
single mode optical fiber 1550 nm
Telcordia GR-20-CORE
optical fiber cable G.652
GR-20-CORE
samsung ribbon
samsung ribbon vs
Samsung tube tv
G.652 samsung
IEC793
Fiber low chromatic dispersion
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR KS54HCTLS O Q / Ì KS74HCTLS INC GB DE§ 7^4145 Dual 4-Bit Decade Counters 7 3 /5 " “ FEATURES -2 3 DESCRIPTION • Individual clock or A and B flip-flops provide dual + 2 and + 5 counters • Direct clear for each 4-blt counter • Significant provement in system density through
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KS54HCTLS
KS74HCTLS
54/74LS
KS74HCTLS:
KS54HCTLS:
7Tb414S
90-XO
14-Pin
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PDF
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SCB-0340N
Abstract: WLL6160-D99 KSB0405HA M470T2864QZ3-CF7 AR5B95 BA59-02608A M470T2864QZ3-CE6 RT8205AGQW T77H121 M470T2864EH3-CF7
Text: - This Document can not be used without Samsung's authorization - Part List : NP-N128-DA01RU Ver. Location 0001 A0010 Part Number 3903-000444 CBF-POWER CORD;DT,EU/KR,CP3,IEC320 C5,25 Part Name & Specification Q'ty SA/SNA 1 SA Parent Part 0001 A1001 BA46-11503A S/W CD;UTILITY,SPRINGFIELD,-,1.0,EXPORT,
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NP-N128-DA01RU
A0010
A1001
B0001
B0003
B0009
B0013
B0302
B0303
B0402
SCB-0340N
WLL6160-D99
KSB0405HA
M470T2864QZ3-CF7
AR5B95
BA59-02608A
M470T2864QZ3-CE6
RT8205AGQW
T77H121
M470T2864EH3-CF7
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS 42E D INC • 7^4142 KMM540512B □ 0 1 Q 543 □ BiSflGK DRAM MODULES 512K X 40 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tR A C tC A C tR C KMM540512B- 7 70ns 80ns 20 ns 20 ns
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KMM540512B
130ns
KMM540512B-
KMM54051
2B-10
KMM540512B
256KX4
20-pin
72-pln
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PDF
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SCB-1700N
Abstract: M470T2864QZ3-CF7 T60H928 2p2s HM160HI T60H976 HD64F2110BVTE10V 3M200MP BA42-00241A BA96-04141A
Text: - This Document can not be used without Samsung's authorization - Part List : NP-N310-KA01ZA Ver. Location 0001 NULL Part Number BA81-06952B RUBBER-HDD_BOTTOM;PEBBLE,SILICON, T0.6,W Part Name & Specification Q'ty SA/SNA 5 SA Parent Part BA75-02238A 0001
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NP-N310-KA01ZA
A0010
A1001
B0001
B0003
B0009
B0010
B0013
B0101
SCB-1700N
M470T2864QZ3-CF7
T60H928
2p2s
HM160HI
T60H976
HD64F2110BVTE10V
3M200MP
BA42-00241A
BA96-04141A
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM540512B DRAM MODULES 5 1 2 K X 4 0 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C 70ns 20ns 130ns KM M 540512B- 8 80ns 20ns 150ns KM M 54051 2B-10 100ns 25ns 180ns KM M 540512B- 7 The Samsung K M M 540512B is a 5 1 2K bits X 40
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KMM540512B
130ns
540512B-
150ns
2B-10
100ns
540512B
KMM54051
20-pin
72-pin
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PDF
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6680a
Abstract: LV 20-P MC 1466 L mt 6680 ALC880 6680as samsung kbc ic hp samsung UX11 hp TPM module
Text: This Document can not be used without Samsung's authorization. 8. D C B A L R P G 46 4 P G 39 AMP CRT C R T /T V P G 32 LCD LV DS AT I M56-P P G 25 ~ 28 P G 30 ~ 31 30P P E G x16 Mobile P roc es s or Y onah - 2M 667MHz L 2 C ac he : 2 MB 478pin PSB 667 MT /S
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478pin
667MHz)
M56-P
6680a
LV 20-P
MC 1466 L
mt 6680
ALC880
6680as
samsung kbc
ic hp samsung
UX11
hp TPM module
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PDF
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SC454MLTRT
Abstract: BA59-01900A UJ-840 B0702 B0701 T60H928 NP-Q40 BA59-01970A SC454ML M1018
Text: - This Document can not be used without Samsung's authorization - 3.Exploded View and Part List SYSTEM I0006 T4001 T4002 T4003 M3005 T0001 T0005 I0002 M0001 B0101 G0011 B0701 G0008 W1004 I0005 E0001 G0003 B2000 B2002 R0002 W3003 T3000 B2001 T2000 T2000 T2004
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I0006
T4001
T4003
T4002
M3005
T0001
T0005
I0002
M0001
G0011
SC454MLTRT
BA59-01900A
UJ-840
B0702
B0701
T60H928
NP-Q40
BA59-01970A
SC454ML
M1018
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PDF
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CHN 652
Abstract: BA75-01763A EMC6N300 KUBNKM088A Tm61PuzG BCM4401EKFBG Tm61puz 7SZ08 NP-Q35 BA42-00163A
Text: 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. This Document can not be used without Samsung’s authorization. 6. MECHANICAL EXPLODED VIEW AND PARTLIST SYSTEM K4001 K0007 K0001 I0003 K0002 K0102 K1001 L1007 K4002
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K4001
K0007
K0001
K0002
K0102
I0003
K1001
L1007
K0201
K0101
CHN 652
BA75-01763A
EMC6N300
KUBNKM088A
Tm61PuzG
BCM4401EKFBG
Tm61puz
7SZ08
NP-Q35
BA42-00163A
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Airpax IEL
Abstract: klixon airpax Airpax cel airpax lel SW SPDT Airpax IUL bullet breaker panel
Text: IAL/IUL/IEL/LEL IAL/IUL/IEL/LEL Series Magnetic Circuit Protectors Introduction | 129 Single & Multi-Pole | 130 Rocker, Sealed Toggle | 132 Configurations | 136 Operating Characteristics | 140 Delay Curves | 141 Specifications | 145 Decision Tables | 147 IAL/IUL/IEL/LEL Series
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BA59-01970A
Abstract: B0404 BA81-02243A DAC-09N014 BA59-01935A LTN141W1 SSM-8515S SSM8515s BA92-04077A KUBNKM092A
Text: - This Document can not be used without Samsung's authorization - 6. Exploded View and Part List w SYSTEM K0001 K2001 K0007 K1001 K4001 K2002 K3001 K0002 I0003 K3002 K0101 K4002 K1003 K1002 L1007 K0201 T0010 I0006 T0001 T4007 T4003 M3004 M3005 I0001 M0003
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K4001
K1001
K2001
K0001
K0007
K2002
K3001
K0002
I0003
K3002
BA59-01970A
B0404
BA81-02243A
DAC-09N014
BA59-01935A
LTN141W1
SSM-8515S
SSM8515s
BA92-04077A
KUBNKM092A
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K4H561638H-UCB3
Abstract: 256mb ddr333 200 pin 66 pin tsop package DDR300 DDR333 DDR400 WV3EG6437S-D4
Text: White Electronic Designs WV3EG6437S-D4 ADVANCED* 256MB – 2x16Mx64 DDR SDRAM SO-DIMM, UNBUFFERED FEATURES DESCRIPTION Unbuffered Double-data-rate architecture The WV3EG6437S is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 16Mx16 DDR
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WV3EG6437S-D4
256MB
2x16Mx64
WV3EG6437S
256Mb
16Mx16
DDR300
DDR400
K4H561638H-UCB3
256mb ddr333 200 pin
66 pin tsop package
DDR333
DDR400
WV3EG6437S-D4
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PDF
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K4H561638H-UCB3
Abstract: K4H561638 T26A
Text: White Electronic Designs WV3EG6437S-D4 ADVANCED* 256MB – 2x16Mx64 DDR SDRAM SO-DIMM, UNBUFFERED FEATURES DESCRIPTION Unbuffered Double-data-rate architecture The WV3EG6437S is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 16Mx16 DDR
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WV3EG6437S-D4
256MB
2x16Mx64
DDR300
DDR400
8K/64ms
DDR300)
DDR400)
32Mx64,
K4H561638H-UCB3
K4H561638
T26A
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PDF
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intel 775 motherboard diagram
Abstract: pin diagram of intel p4 processor ICS9LP505-2 96MP2DD-24FA-4M7T lga775 prescott 800 dual core cpu 96D2-1G667NN-TR Socket 775 PIN diagram Intel Pentium 4 Socket 775 PIN diagram W83627DHG-a
Text: DVMB-764 16 CH D1 480 FPS MPEG4 Hardware Encoding ATX Main Board with Intel Q965 Platform Features NEW 16 Channel D1 480 FPS MPEG4 Hardware Encoding on board 16 Channel Audio Encoding on board Intel Q965 533/800/1066 MHz FSB Dual video stream MPEG4 ,MJPEG
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Original
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DVMB-764
RS-485
2000/XP
2002/95/EC
DVMB-764
DDR2-667
96D2-2G667FB-TR
96D2-1G667NN-TR
intel 775 motherboard diagram
pin diagram of intel p4 processor
ICS9LP505-2
96MP2DD-24FA-4M7T
lga775
prescott 800 dual core cpu
Socket 775 PIN diagram
Intel Pentium 4 Socket 775 PIN diagram
W83627DHG-a
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PDF
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T60H928
Abstract: CHN 652 BA31-00027A w18 SMD BA44-00211A BA41-00639A BA92-04077A Tm61Puz chn l35 BA68-03131A
Text: - This Document can not be used without Samsung's authorization - 6. Exploded View 1 TOP Assy1 SENS X11 < 6 - 1 > - This Document can not be used without Samsung's authorization - 6. Exploded View 2) TOP Assy2 SENS X11 < 6 - 2 > - This Document can not be used without Samsung's authorization -
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NP-X11CV01/CHN
BA81-02443A
BA64-00019A
BA81-02448A
BA81-02445A
BA81-02446A
BA81-02452A
BA81-02451A
BA81-02460A
BA61-00004A
T60H928
CHN 652
BA31-00027A
w18 SMD
BA44-00211A
BA41-00639A
BA92-04077A
Tm61Puz
chn l35
BA68-03131A
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PDF
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2929 transistor
Abstract: t2929 MPSA62 MPSA75 T-31-21 vbe 10v T-29-29 625MW
Text: S A MS UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T-29-29 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vcta=30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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OCR Scan
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mpsa64
625mW
MPSA62
T-29-29
100/iA,
mpsh17
t-10-fc
T-31-21
-100MHz-
2929 transistor
t2929
MPSA75
T-31-21
vbe 10v
T-29-29
625MW
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PDF
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DSP GROUP
Abstract: MD66 ATM machine using microcontroller HDB15 D6305B D6351A KM29N040 MDB2
Text: D6351A D S P G R O U P . I M C . F la sh Tad Chip for an all Digital Telephone Answering Device with Flash Memory and True FULL Duplex SpeakerPhone G en e r a l D es c r i ptic >n The D6351A chip is a digital speech/signal processing subsystem that implements all functions of TRUESPEECH speech
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D6351A
D6351A
10F-5,
DSP GROUP
MD66
ATM machine using microcontroller
HDB15
D6305B
KM29N040
MDB2
|
PDF
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NEC Tokin cap
Abstract: NEC Tokin ultra low esr
Text: 03 Correct Use of NeoCapacitor Please Read [Notes] ● Be sure to read "Notes on Using The NeoCapacitor" (p21 - p24) and "Cautions" (p27) before commencing circuit design or using the capacitor. ● Confirm the usage conditions and rated performance of the capacitor before use.
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0326EDNE01VOL03E
NEC Tokin cap
NEC Tokin ultra low esr
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D KM49V512A/AL/ALL • 7 ^ 4 1 4 2 OOlS'iS'l 43^ I SMGK CMOS DRAM 512K x9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KM49V512A/AL/ALL is a CMOS high speed 524,288 b it x 9 Dynam ic Random A ccess
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OCR Scan
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KM49V512A/AL/ALL
KM49V512A/AL/ALL
KM49V512A/AL/ALL-7
130ns
KM49V512A/AL/ALL-8
150ns
28-LEAD
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PDF
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DDR333
Abstract: PC2700 WV3EG216M64STSU-D4 DDR266A
Text: White Electronic Designs WV3EG216M64STSU-D4 PRELIMINARY* 256MB – 2x16Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The WV3EG216M64STSU is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of
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WV3EG216M64STSU-D4
256MB
2x16Mx64
WV3EG216M64STSU
16Mx16
PC2700
DDR333
WV3EG216M64STSU-D4
DDR266A
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PDF
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NEC Tokin cap
Abstract: lc 945 p NEC Tokin 108
Text: 03 Correct Use of NeoCapacitor Please Read [Notes] ● Be sure to read "Notes on Using The NeoCapacitor" (p21 - p24) and "Cautions" (p27) before commencing circuit design or using the capacitor. ● Confirm the usage conditions and rated performance of the capacitor before use.
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Original
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0326EDNE01VOL03E
NEC Tokin cap
lc 945 p
NEC Tokin 108
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PDF
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