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    5503g

    Abstract: No abstract text available
    Text: I T T CORP/ I T T CMPNTS 31E I> • 4bf l 2ba4 GQ0131b G ■ ÌJ RECTIFIERS Silicon Rectifiers 1 Amp in Plastic Package Type Dwg, No. - Average Rectified . Current at Ta - 50 °C Peak Inverse Voltage Repetitive Peak Forward Current Surge Forward Current Max. Forward


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    GQ0131b 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 DO-41 DO-35 5503g PDF

    bb529

    Abstract: BB521 pin diode do35 BB222 BB*329 A om 355 BB221 equivalent
    Text: I T T CORP/ I T T CHPNTS 31E » • 4bfi5t.öM OGGliO^ 3 ■ y -O S -O ? SCHOTTKY DIODES - •. - . ' - •• ' - ••••• - Silicon Schottky Barrier Diodes in DO-35 Package for general purpose applications with low forward voltage drop and very fast switching times.


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    DO-35 LL101A, LL103A, SD101A* SD101B SD101C DO-41 bb529 BB521 pin diode do35 BB222 BB*329 A om 355 BB221 equivalent PDF

    BS192

    Abstract: BS212 D 92 M - 03 DIODE D 92 M - 02 DIODE 10D3 2n3904, itt c 92 M - 02 DIODE bs189
    Text: I T T CORP/ I T T CMPNTS 31E D • 4böEböH ÜQQ1 3 Q 7 T ■ VMOS NPN AND PNP TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETsfeaturing high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown, no thermal runaway.


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    BS107 BS108 BS112 BS170 BS189 170rox. DO-41 DO-35 BS192 BS212 D 92 M - 03 DIODE D 92 M - 02 DIODE 10D3 2n3904, itt c 92 M - 02 DIODE PDF

    A2 diode

    Abstract: 1N414S
    Text: I T T CORP/ I T T CMPNTS 31E D • 4bê2bê4 00Q13QÔ 1 ■ SILICON DIODES - - - — - - - - : General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver. Power Junction Rectified Dissipation TemperaCurrent lo at 25 'G


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    00Q13QÔ DO-35 1N914 1N414S 1N4149 1N4150 1N4151 1N4152 1N4153 1N4154 A2 diode PDF