G21 TRANSISTOR Search Results

G21 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

G21 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CA3102 Abstract: CA3102E CA3102M MS-012-AB diode b22 L 321 t Text: CA3102 TM Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which	Original	CA3102 500MHz CA3102 500MHz. FN611 200MHz CA3102E CA3102M MS-012-AB diode b22 L 321 t	PDF
CA3102 Abstract: CA3102E CA3102M CA3102MZ FN611 Text: CA3102 Data Sheet October 12, 2005 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which	Original	CA3102 500MHz CA3102 500MHz. FN611 200MHz CA3102E CA3102M CA3102MZ	PDF
CA3102 Abstract: CA3102E CA3102M MS-012-AB Text: CA3102 Data Sheet November 1999 Dual High Frequency Differential Amplifier For Low Power Applications Up to 500MHz The CA3102 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six transistors which	Original	CA3102 500MHz CA3102 500MHz. 200MHz CA3102E CA3102M MS-012-AB	PDF
g21 Transistor Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor Text: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃	Original	S9018 1100MHz OT-23 MRA151 MRA153 g21 Transistor transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor	PDF
AN5337 ca3028 Abstract: ca3028a AN5337 CA3028B trw rf transistor ca3028 trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22 Text: Application of the CA3028 and Integrated-Circuit RF Amplifiers in the HF and VHF Ranges Application Note Introduction The CA3028A and CA3028B integrated circuits are singlestage differential amplifiers. Each circuit also contains a constant-current transistor and suitable biasing resistors. The	Original	CA3028 CA3028A CA3028B 100MHz CA3028A CA3028B AN5337 ca3028 AN5337 trw rf transistor trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22	PDF
d113zs Abstract: g21 Transistor D113Z R1-1 DTD113ZK DTD113ZS DTD113ZU SC-72 T106 T146 Text: DTD113ZK / DTD113ZU / DTD113ZS Transistors 500mA / 50V Digital transistors with built-in resistors DTD113ZK / DTD113ZU / DTD113ZS zExternal dimensions (Unit : mm) zApplications Inverter, Interface, Driver 2.9 DTD113ZK 1.1 0.4 0.8 (2) (1) 0.3Min. zFeatures	Original	DTD113ZK DTD113ZU DTD113ZS 500mA DTD113ZK d113zs g21 Transistor D113Z R1-1 DTD113ZS SC-72 T106 T146	PDF
g21 Transistor Abstract: DTD113Z DTD113ZK DTD113ZS DTD113ZU SC-72 T106 T146 Text: DTD113ZK / DTD113ZU / DTD113ZS Transistors Digital transistors built-in resistors DTD113ZK / DTD113ZU / DTD113ZS zExternal dimensions (Unit : mm) 2.9 ± 0.2 DTD113ZK 1.1 +0.2 -0.1 1.9 ± 0.2 0.8 ± 0.1 0.95 0.95 (2) 0~0.1 +0.1 0.15 -0.06 0.4 +0.1 -0.05 ROHM : SMT3	Original	DTD113ZK DTD113ZU DTD113ZS DTD113ZK SC-59 DTD113ZU g21 Transistor DTD113Z DTD113ZS SC-72 T106 T146	PDF
DTD113ZK Abstract: DTD113ZU T106 T146 Text: 500mA / 50V Digital transistors with built-in resistors DTD113ZK / DTD113ZU  Applications Inverter, Interface, Driver  Dimensions (Unit : mm) 2.9 DTD113ZK 1.1 0.4 (3) 1.6 2.8  Features 1) Built-in bias resistors enable theconfiguration of an inverter circuit without connecting external input	Original	500mA DTD113ZK DTD113ZU DTD113ZK SC-59 R0039A DTD113ZU T106 T146	PDF
Y22 SOT23 Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11 Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor	Original	PMBTH10 PMBTH10 PMBTH81. MSB003 Y22 SOT23 MSB003 g21 Transistor B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11	PDF
Untitled Abstract: No abstract text available Text: DTD113Z series NPN 500mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Value UMT3 SMT3 OUT 50V 500mA 1kW 10kW IN OUT IN GND GND DTD113ZU SOT-323 (SC-70) lFeatures DTD113ZK SOT-346 (SC-59) lInner circuit	Original	DTD113Z 500mA 500mA DTD113ZU OT-323 SC-70) DTD113ZK OT-346 SC-59) R1120A	PDF
marking G21 Abstract: No abstract text available Text: DTD113Z series NPN 500mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Value UMT3 SMT3 OUT 50V 500mA 1kW 10kW IN OUT IN GND GND DTD113ZU SOT-323 (SC-70) lFeatures DTD113ZK SOT-346 (SC-59) lInner circuit	Original	DTD113Z 500mA DTD113ZU OT-323 SC-70) DTD113ZK OT-346 SC-59) R1120A marking G21	PDF
AN6818 Abstract: 3N153 datasheet 40841 40841 dual gate mosfet 3N153 Harris CA3086 AN6668 CA3060 g21 Transistor gyrator Text: CA3060 Semiconductor T UCT ROD ACEMEN 47 P E 7 T L OLE REP 00-442-7 OBS ENDED 8 110kHz, Operational M ns 1 .com COM pplicatio @harris E R NO ntral A entapp Transconductance Amplifier Array Ce : c Call or email January 1999 Description • Low Power Consumption as Low as 100mW Per	Original	CA3060 110kHz, 100mW CA3060 AN6818 3N153 datasheet 40841 40841 dual gate mosfet 3N153 Harris CA3086 AN6668 g21 Transistor gyrator	PDF
AN6818 Abstract: 40841 3N153 3N153 datasheet AN6668 CA3060 CA3060E CA3080 CA3280 AN-6818 Text: S E M I C O N D U C T O R NS NDED NOT November 1996 MME RECO FOR ESIG NEW D CA3060 110kHz, Operational Transconductance Amplifier Array Features Description • Low Power Consumption as Low as 100mW Per Amplifier The CA3060 monolithic integrated circuit consists of an array of	Original	CA3060 110kHz, 100mW CA3060 AN6818 40841 3N153 3N153 datasheet AN6668 CA3060E CA3080 CA3280 AN-6818	PDF
CA3049T Abstract: ca3049 CA3102 J307 CA3102 equivalent CA3102E CA3102M I9 transistor CA3102M96 m1k8 Text: S E M I C O N D U C T O R CA3049, CA3102 Dual High Frequency Differential Amplifiers For Low Power Applications Up to 500MHz November 1996 Features Description • Power Gain 23dB Typ . . . . . . . . . . . . . . . . . . . 200MHz The CA3049T and CA3102 consist of two independent	Original	CA3049, CA3102 500MHz 200MHz CA3049T CA3102 500MHz. ca3049 J307 CA3102 equivalent CA3102E CA3102M I9 transistor CA3102M96 m1k8	PDF

CYStech Electronics Abstract: DTB113ZN3 DTD113ZN3 BG21 marking G21 Text: Spec. No. : C379N3 Issued Date : 2003.10.05 Revised Date : 2004.02.26 Page No. : 1/4 CYStech Electronics Corp. NPN Digital Transistors Built-in Resistors DTD113ZN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input	Original	C379N3 DTD113ZN3 DTB113ZN3 OT-23 UL94V-0 CYStech Electronics DTB113ZN3 DTD113ZN3 BG21 marking G21	PDF
marking G21 Abstract: CYStech Electronics DTB113ZS3 DTD113ZS3 Text: Spec. No. : C379S3 Issued Date : 2004.02.26 Revised Date : Page No. : 1/4 CYStech Electronics Corp. NPN Digital Transistors Built-in Resistors DTD113ZS3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input	Original	C379S3 DTD113ZS3 DTB113ZS3 OT-323 UL94V-0 marking G21 CYStech Electronics DTB113ZS3 DTD113ZS3	PDF
J307 Abstract: ca3102e CA3102 ca3102 diff amp Text: NS E SI G D W T EN R NE D FO PLACEM ter at E D N E n MME r t Ce ED R tsc ECO MMEND l Suppo sil.com/ R T a r O c Data Sheet e i t NO EC hn .in NO R our Tec or www t L c I a cont -INTERS 8 1-88 Dual High Frequency Differential Amplifier For Low Power Applications Up to	Original	CA3102 500MHz CA3102 500MHz. J307 ca3102e ca3102 diff amp	PDF
CA3054 Abstract: cascode transistor array CA3054M CA3054M96 Text: CA3054 S E M I C O N D U C T O R March 1993 Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential	Original	CA3054 120MHz CA3054 300MHz. 120MHz. cascode transistor array CA3054M CA3054M96	PDF
CA3054M96 Abstract: double channel double balanced demodulators CA3054 CA3054M MS8002 Text: CA3054 S E M I C O N D U C T O R Dual Independent Differential Amp for Low Power Applications from DC to 120MHz November 1996 Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential amplifiers with associated constant current transistors on a	Original	CA3054 120MHz CA3054 300MHz. 120MHz. 1-800-4-HARRIS CA3054M96 double channel double balanced demodulators CA3054M MS8002	PDF
g21 Transistor Abstract: No abstract text available Text: D T D 1 1 3 Z K Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm • available in an SMT3 (SMT, SC-59) package • package marking: DTD113ZK; G21 • a built-in bias resistor allows inverter circuit configuration without external	OCR Scan	SC-59) DTD113ZK; DTD113ZK Ta-251C 50ftn DTD113ZK g21 Transistor	PDF
diode G21 Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99 Text: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith	OCR Scan	FMMD914 BAV70 BAV74 BAV99 BAW56 100mA diode G21 marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84	PDF
KTA2400 Abstract: KTC3400 Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC3400 EPITAXIAL PLANAR NPN TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES • • • • Matched Pairs for Differential Amplifiers. High Breakdown Voltage : V c e o = 120V Min. . Low Noise : NF=ldB(Typ.), 10dB(Max.).	OCR Scan	KTC3400 KTA2400. KTA2400 KTC3400	PDF
DTD113 Abstract: No abstract text available Text: Transistors Digital transistors built-in resistors D T D 1 1 3 Z K / D T D 1 1 3 Z U •E x te rn a l dimensions (Units: mm) DTD113ZK 2.9±0.2 i 1+0.2 1,1- 0.1 1 .9 ± 0 .2 n 0 .8 ± 0 .t 10.95 0,95 c\P^ d o + 1 ca o +j CO eg (O t j( 3 ) ROHM : SMT3 EIAJ : SC-59	OCR Scan	DTD113ZK DTD113ZK DTD113ZU DTD113ZS DTD113ZK/DTD113ZU/DTD113ZS DTD113	PDF
B34 transistor Abstract: MPSH10 MPSH81 GHz PNP transistor transistor 911 transistor k 911 Text: Philips Semiconductors Product specification x>y7'& PNP 1 GHz switching transistor PHILIPS INTERNATIONAL FEATURES SbE D € MPSH81 711DfiEb QG4bD75 flbl B P H I N PINNING • Low cost • High transition frequency. PIN DESCRIPTION DESCRIPTION 1 collector 2	OCR Scan	MPSH10. MPSH81 Q04bD75 T-37-15 D04bD7Ã MRA567 B34 transistor MPSH10 MPSH81 GHz PNP transistor transistor 911 transistor k 911	PDF

G21 TRANSISTOR Search Results

G21 TRANSISTOR Result Highlights (5)

G21 TRANSISTOR Datasheets Context Search

CA3102

CA3102

CA3102

g21 Transistor

AN5337 ca3028

d113zs

g21 Transistor

DTD113ZK

Y22 SOT23

Untitled

marking G21

AN6818

AN6818

CA3049T

CYStech Electronics

marking G21

J307

CA3054

CA3054M96

g21 Transistor

diode G21

KTA2400

DTD113

B34 transistor