DMA366A2
Abstract: No abstract text available
Text: DMA366A2 Tentative Total pages page DMA366A2 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuits Marking Symbol : G5 Package Code : SSSMini6-F2-B Internal Connection 6 5 4 Absolute Maximum Ratings Ta = 25 °C
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DMA366A2
DMA366A2
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMG5N dual digital transistors PNP+PNP SOT-363 FEATURES z Two DTA114Y chips in a package Marking: G5 1 Equivalent circuit Absolute maximum ratings (Ta=25℃) Symbol
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OT-363
OT-363
DTA114Y
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UMG5N dual digital transistors PNP+PNP SOT-353 FEATURES z Two DTA114Y chips in a package 1 Marking: G5 Equivalent circuit Absolute maximum ratings (Ta=25℃) Symbol
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OT-353
OT-353
DTA114Y
voltag150
100MHz
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ft2232d
Abstract: FT2232 FT2232C FT2232L 2777 SC136640
Text: Future Technology Devices International Limited 373 Scotland Street, Glasgow, Scotland. G5 8QB. U.K. Tel.: +44 0 141 429 2777 Fax.: + 44 (0) 141 429 2758 E-Mail : [email protected] Web : http://www.ftdichip.com Issue Date: 2008- 01- 22 PCN Tracking Number: 00002
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FT2232C,
FT2232L
FT2232D
FT2232D
SC136640
FT2232
FT2232C
FT2232L
2777
SC136640
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-23121-2E ASSP Mobile Communication Systems SAW Dual Filter 700 to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for mobile phones continues to increase, so has demand for smaller size, lighter weight and lower
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DS04-23121-2E
D-63303
F0010
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FES2J
Abstract: FES1J w5 marking MARKING w5 J4 marking code EA marking code MARKING U1
Text: Surface Mount Fast Recovery Rectifiers Part No. RS2A RS2B RS2D RS2G RS2J RS2K FRS2A FRS2B FRS2D FRS2G FRS2J FRS2K FRS2M RS3A RS3B RS3D RS3G RS3J RS3K FRS3A FRS3B FRS3D FRS3G FRS3J FRS3K FRS3M Marking Code RA RB RD RG RJ RK G1 G2 G3 G4 G5 G6 G7 RA RB RD RG
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-65oC
150oC
FES2J
FES1J
w5 marking
MARKING w5
J4 marking code
EA marking code
MARKING U1
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FAR-G5CN-942M50-D294
Abstract: transistor D292 FAR-G5CN-877M50-D292 FAR-G6CH-1G7475-L216 FAR-G6CH-1G8425-L217 FAR-G6CH-1G8425-L224 FAR-G6CH-1G8800-L214 FAR-G6CH-1G8950-L210D FAR-G6CH-1G9600-L215 FAR-G6CH-1G9600-L219
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-23121-1E ASSP Mobile Communication Systems SAW Dual Filter 700 to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for handheld phones continues to increase, so has demand for smaller size, lighter weight and
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DS04-23121-1E
FAR-G5CN-942M50-D294
transistor D292
FAR-G5CN-877M50-D292
FAR-G6CH-1G7475-L216
FAR-G6CH-1G8425-L217
FAR-G6CH-1G8425-L224
FAR-G6CH-1G8800-L214
FAR-G6CH-1G8950-L210D
FAR-G6CH-1G9600-L215
FAR-G6CH-1G9600-L219
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RX-2 -G s
Abstract: FAR-G5CN-877M50-D292 FAR-G5CN-942M50-D296 FAR-G6CH-1G7475-L216 FAR-G6CH-1G8425-L217 FAR-G6CH-1G8425-L218 FAR-G6CH-1G8425-L222 FAR-G6CH-1G8425-L227B FAR-G6CH-1G8800-L214 FAR-G6CH-1G9600-L215
Text: FUJITSU MEDIA DEVICE DATA SHEET DS04-23121-3E ASSP Mobile Communication Systems SAW Dual Filter 700 to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for mobile phones continues to increase, so has demand for smaller size, lighter weight and lower
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DS04-23121-3E
F0012
RX-2 -G s
FAR-G5CN-877M50-D292
FAR-G5CN-942M50-D296
FAR-G6CH-1G7475-L216
FAR-G6CH-1G8425-L217
FAR-G6CH-1G8425-L218
FAR-G6CH-1G8425-L222
FAR-G6CH-1G8425-L227B
FAR-G6CH-1G8800-L214
FAR-G6CH-1G9600-L215
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G4EU
Abstract: E72873 MIXA20W1200TMH
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV
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MIXA20W1200TMH
20091127a
G4EU
E72873
MIXA20W1200TMH
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61845
Abstract: 24-G-5
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-23121-3E ASSP Mobile Communication Systems SAW Dual Filter 700 to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for mobile phones continues to increase, so has demand for smaller size, lighter weight and lower
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DS04-23121-3E
D-63303
F0012
61845
24-G-5
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MAX 8997
Abstract: FAR-G6CN-1G8950-L233 FAR-G5CN-877M50-D292 FAR-G5CN-942M50-D296 FAR-G6CH-1G7475-L216 FAR-G6CH-1G8425-L217 FAR-G6CH-1G8425-L218 FAR-G6CH-1G8425-L222 FAR-G6CH-1G8425-L227B FAR-G6CH-1G8800-L214
Text: FUJITSU MEDIA DEVICE DATA SHEET DS04-23121-5E ASSP Mobile Communication Systems Piezoelectric SAW Dual BPF 700 MHz to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for mobile phones continues to increase, so has demand for smaller size, lighter weight and lower
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DS04-23121-5E
F0107
MAX 8997
FAR-G6CN-1G8950-L233
FAR-G5CN-877M50-D292
FAR-G5CN-942M50-D296
FAR-G6CH-1G7475-L216
FAR-G6CH-1G8425-L217
FAR-G6CH-1G8425-L218
FAR-G6CH-1G8425-L222
FAR-G6CH-1G8425-L227B
FAR-G6CH-1G8800-L214
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BAR63
Abstract: Q62702-A1038 a1038 transistor BR diode A1038 BAR63-04 BAR64 Q62702-A1036 Q62702-A1037 Q62702-A1039
Text: BAR 63. Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4 G5 G6 Q62702-A1036
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OT-23
Q62702-A1036
Q62702-A1037
Q62702-A1038
Q62702-A1039
BAR63
BAR63-04
BAR63
Q62702-A1038
a1038 transistor
BR diode
A1038
BAR64
Q62702-A1036
Q62702-A1037
Q62702-A1039
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Fujitsu SAW
Abstract: transistor D292 FAR-G5CN-877M50-D292 FAR-G6CH-1G8425-L218 FAR-G6CH-1G8425-L227B FAR-G6CH-1G9600-L228A FAR-G6CN-1G8950-L233 PDC800 FUJITSU saw filter l228a
Text: FUJITSU MEDIA DEVICE DATA SHEET DS04-23121-6E ASSP Mobile Communication Systems Piezoelectric SAW Dual BPF 700 MHz to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for mobile phones continues to increase, so has demand for smaller size, lighter weight and lower
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DS04-23121-6E
F0308
Fujitsu SAW
transistor D292
FAR-G5CN-877M50-D292
FAR-G6CH-1G8425-L218
FAR-G6CH-1G8425-L227B
FAR-G6CH-1G9600-L228A
FAR-G6CN-1G8950-L233
PDC800
FUJITSU saw filter
l228a
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FAR-G6CH-1G8800-L214
Abstract: FAR-G6CH-1G8950-L210D FAR-G6CH-1G9600-L215 FAR-G6CH-1G9600-L219 PDC800 FAR-G5CN-877M50-D292 FAR-G5CN-942M50-D294 FAR-G6CH-1G7475-L216 FAR-G6CH-1G8425-L217 FAR-G6CH-1G8425-L224
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-23121-1E ASSP Mobile Communication Systems SAW Dual Filter 700 to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for handheld phones continues to increase, so has demand for smaller size, lighter weight and
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DS04-23121-1E
FAR-G6CH-1G8800-L214
FAR-G6CH-1G8950-L210D
FAR-G6CH-1G9600-L215
FAR-G6CH-1G9600-L219
PDC800
FAR-G5CN-877M50-D292
FAR-G5CN-942M50-D294
FAR-G6CH-1G7475-L216
FAR-G6CH-1G8425-L217
FAR-G6CH-1G8425-L224
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Untitled
Abstract: No abstract text available
Text: FUJITSU MEDIA DEVICE DATA SHEET DS04-23121-5E ASSP Mobile Communication Systems Piezoelectric SAW Dual BPF 700 MHz to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for mobile phones continues to increase, so has demand for smaller size, lighter weight and lower
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DS04-23121-5E
F0107
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Untitled
Abstract: No abstract text available
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin coniguration see outlines. G2 G4 EU G6 EV EW Features: Application:
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MIXA20W1200TMH
20091127a
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G4EU
Abstract: ic MARKING QG E72873 DIODE T6 marking
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV EW Features: Application:
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MIXA20W1200TMH
20091127a
G4EU
ic MARKING QG
E72873
DIODE T6 marking
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S4 42 DIODE
Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
Text: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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GWM100-0085X1
ID110
IF110
100-0085X1
100-0085X1-SMD
100-0085X1
S4 42 DIODE
smd diode S6
smd diode code g3
DIODE marking S6 77
smd diode g6 DIODE S4 39 smd diode
smd diode code g4
smd diode code g2
SMD SL
DIODE S4 37
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Untitled
Abstract: No abstract text available
Text: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications
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180-004X2
ID110
IF110
20110307c
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smd diode g6
Abstract: marking G3 IF110 GMM3x60-015X1
Text: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings
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GMM3x60-015X1
IF110
ID110
3x60-015X1
3x60-015X1
smd diode g6
marking G3
IF110
GMM3x60-015X1
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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1SS196
Abstract: No abstract text available
Text: 1SS196 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + G5 2.5-0.3 FEATURES: . Small Package SOT-23M0D . Low Forward Voltage V F = 0 .9 V T y p . . Fast Reverse Recovery Time trr= l ,6 n s ( T y p .) . Small Total Capacitance
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1SS196
OT-23M0D
01/fF
1SS196
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Untitled
Abstract: No abstract text available
Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO DEL FUSE INC. AND SHALL NOT DE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF DEL FUSE INC. RoHS 2002/95/E C J SCHEMATIC ELECTRICAL CHARACTERISTICS g g5°C -O -O O 4 14 13 POLARITY
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2002/95/E
350//H
100kHz,
300kHz-100MHz
30MHz
60MHz
80MHz
30MHz
50MHz
0100MHz
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2412,RN2413 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN7A17 u m u 'm g RN7A13 m « • w ■ ■ « r Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + G5 2.5 —0.3 • With Built-in Bias Resistors
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RN2412
RN2413
RN7A17
RN7A13
RN1412,
RN1413
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