Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM
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CY8C38
CY8C29
incl795
12T9797
12T9804
12T9803
12T9800
12T9802
12T9801
12T9805
Arduino Mega2560
13001 S 6D TRANSISTOR
arduino uno rev 3
agilent optical encoder 9988
MZ 13001 TRANSISTOR
arduino mega 2650
skiip 613 gb 123 ct
arduino sound sensor module pic
arduino nano
mc34063l
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Untitled
Abstract: No abstract text available
Text: GB100XCP12-227 IGBT/SiC Diode Co-pack VCES = ICM = VCE SAT = Features Package • RoHS Compliant Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds
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GB100XCP12-227
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Abstract: No abstract text available
Text: designfeature Deepak Veereddy, Device Engineer, Eric Lieser, Senior Field Applications Engineer Michael DiGangi, Chief Business Development Officer, GeneSiC Semiconductor, Inc. 1200 V/100 A Si IGBT/SiC Diode Copack Cuts Switching Losses A recently launched 1200 V
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GA100XCP12
55-kW
com/micnotes/APT0408
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Abstract: No abstract text available
Text: TECHNOLOGY 1200 V/100 A Si IGBT/SiC Diode Copack for Power Electronic Applications Designed to deliver high system efficiencies by a drastic reduction in the IGBT and FWD dynamic losses GeneSiC Semiconductor, Inc. has recently launched 1200 V IGBT copack products that
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Abstract: No abstract text available
Text: Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers offering superior surge current capability and reduced power losses S.G. Sundaresana,*, C. Sturdevant, H. Issa, M. Marripelly, E. Lieser and R. Singh GeneSiC Semiconductor, 43670 Trade Center Pl, Suite 155, Dulles, Virginia 20166, USA.
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GA100XCP12
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Untitled
Abstract: No abstract text available
Text: GB100XCP12-227 IGBT/SiC Diode Co-pack VCES = ICM = VCE SAT = Features Package • RoHS Compliant Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds
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PDF
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GB100XCP12-227
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