C10535E
Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58
Text: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package
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NE72218
NE72218-T1
NE72218-T2
C10535E
NE72218
NE72218-T1
NE72218-T2
VP15-00-3
ne72218 v58
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SHF-0189
Abstract: SHF-0289 AN-031 s-parameter file of SHF-0289 by Sirenza ML200C H H L C9 LL1608-FS6N8J amplifier shf MCH185A220J ef SOT-89 hfet
Text: DESIGN APPLICATION NOTE - AN-031 SHF-0189 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET
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AN-031
SHF-0189
EAN-101798
SHF-0289
AN-031
s-parameter file of SHF-0289 by Sirenza
ML200C
H H L C9
LL1608-FS6N8J
amplifier shf
MCH185A220J
ef SOT-89 hfet
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SHF-0289
Abstract: MCH185CN102KK AN032 TMC1DB106KLRH AN-032 GaAs FET amplifer H H L C9 MCH185A390JK ML200C LL1608-FS4N7S
Text: DESIGN APPLICATION NOTE - AN-032 SHF-0289 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET
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AN-032
SHF-0289
EAN-101799
MCH185CN102KK
AN032
TMC1DB106KLRH
AN-032
GaAs FET amplifer
H H L C9
MCH185A390JK
ML200C
LL1608-FS4N7S
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NE800296
Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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AN82901-1
NE800296
NE800196
NE24406
diode deg avalanche zo 150 63
SK3448
ne8002
NE868199
shockley diode
NE800495-4
shockley diode application
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NE800296
Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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AN82901-1
24-Hour
NE800296
diode deg avalanche zo 150 63
NE72089
ne8002
SK3448
universal jfet biasing curve graph
gunn diode ghz s-parameter
NE800196
impatt diode
NE800495-4
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
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GaAs FET amplifer
Abstract: AW1218301N AW612304 AP45401 ph01 AL26501 AL618801 AW218201N AW26204 AW26201N
Text: MicroWave Technology, Inc. MICROWAVE AMPLIFIERS Standard Amplifier Capability MicroWave Technology, Inc. has been a leading manufacturer of high performance amplifiers since it was founded in 1982. MwT’s principal strengths are derived from an in-house quarter micron Gallium Arsenide device
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PH-01
GaAs FET amplifer
AW1218301N
AW612304
AP45401
ph01
AL26501
AL618801
AW218201N
AW26204
AW26201N
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Avantek amplifier
Abstract: Avantek amt AVANTEK transistor nomograph Avantek diode limiter AMT 4052 AWS01 Avantek apg AVANTEK solid state 290K1
Text: AVANTEK APPLICATION NOTES A Snbddiary at HewUtt-Packard AM PLIFIERS If excessive power is applied to a transistor amplifier, the first measureable affect is almost always an increase in noise figure. A somewhat higher power will further degrade noise figure and decrease the gain of the amplifier. If the input power
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1-800-AVANTEK
Avantek amplifier
Avantek amt
AVANTEK transistor
nomograph
Avantek diode limiter
AMT 4052
AWS01
Avantek apg
AVANTEK solid state
290K1
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TGF4250
Abstract: r02107 TGF4260 TGF4230 TGF4240 Design Seminar Signal Transmission ab 7614 Au Sn eutectic R0210
Text: APPLICATION NOTES: INTRODUCTION Designing High Efficiency Applifiers using HFETs HFET TriQuint Semiconductor has developed a range of Heterostructure FETs designed for power amplifier applications where high power-added efficiency is a key specification. They also offer the
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CAP 0402
Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
Text: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm
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CMH0819
VQFN-24
CMH0819
CAP 0402
GaAs FET amplifer
mmic marking c8
GaAs FET amplifer chip
VQFN-24
MMIC marking code 132
MMIC marking code 101
mmic code marking P 18
mmic c8
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Untitled
Abstract: No abstract text available
Text: TGA2700 X Band Driver Amplifier Key Features • • • • • • • • Frequency Range: 7-13 GHz 25 dB Nominal Gain 30dBm Output Power @ Pin=10dBm, Midband 12 dB Input Return Loss 10 dB Output Return Loss 0.25 um 3MI pHEMT Technology Nominal Bias 9V @ 300 mA/225 mA
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TGA2700
30dBm
10dBm,
A/225
300mA
TGA2700
30dcern.
0007-inch
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GaAs FET amplifer
Abstract: TGA2700 X-band GaAs pHEMT MMIC Chip
Text: TGA2700 X Band Driver Amplifier Key Features • • • • • • • • Frequency Range: 7-13 GHz 25 dB Nominal Gain 30dBm Output Power @ Pin=10dBm, Midband 12 dB Input Return Loss 10 dB Output Return Loss 0.25 um 3MI pHEMT Technology Nominal Bias 9V @ 300 mA/225 mA
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TGA2700
30dBm
10dBm,
A/225
300mA
TGA2700
0007-inch
GaAs FET amplifer
X-band GaAs pHEMT MMIC Chip
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ne72218 v58
Abstract: NE72218-T1 NE72218-T2 C10535E NE72218 VP15-00-3
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TGA2700-EPU
Abstract: TGA2700 GaAs FET amplifer chip MMIC X-band amplifier X-band GaAs pHEMT MMIC Chip
Text: Advance Product Information November 12, 2004 X-Band Driver Amplifier TGA2700 Key Features • • • • • • • • Frequency Range: 7-13 GHz 25 dB Nominal Gain 30dBm Output Power @ Pin=10dBm, Midband 12 dB Input Return Loss 10 dB Output Return Loss
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TGA2700
30dBm
10dBm,
A/225
300mA
TGA2700-EPU
30dBm
0007-inch
TGA2700
GaAs FET amplifer chip
MMIC X-band amplifier
X-band GaAs pHEMT MMIC Chip
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8-12 GHz power amplifier mmic 40 dBm
Abstract: all electrical symbol GaAs FET amplifer chip TGA2700-EPU
Text: Advance Product Information November 8, 2004 X-Band Driver Amplifier TGA2700-EPU Key Features • • • • • • • • Frequency Range: 8-13 GHz 25 dB Nominal Gain 30dBm Output Power @ Pin=10dBm, Midband 12 dB Input Return Loss 10 dB Output Return Loss
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TGA2700-EPU
30dBm
10dBm,
300mA
TGA2700-EPU
30dBm
0007-inch
8-12 GHz power amplifier mmic 40 dBm
all electrical symbol
GaAs FET amplifer chip
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HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic
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E-28230
S-164
CH-8902
HRMA-0470B
Semicon volume 1
HPMA-2085
HP 33002A
AVANTEK ATF26884
SJ 2036
HPMA-0470TXV
HPMA-0485
HPMA-0370
DIODE GOC 61
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C band FET transistor s-parameters
Abstract: ne3210s01 NE3210S01-T1 NE3210S01-T1B
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
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NE3210S01
NE3210S01
NE3210S01-T1
NE3210S01-T1B
C band FET transistor s-parameters
NE3210S01-T1
NE3210S01-T1B
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NE3210S01
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
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NE3210S01
NE3210S01
NE3210S01-T1
NE3210S01-T1B
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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Untitled
Abstract: No abstract text available
Text: CMH0819 ? High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports ? Integrated bypass switch for LNAs CDMA ? GaAs PHEMT Process ? Leadless 3.5 x 4.5 mm. SMT package LNA ? LO Input power range: -7.0 to 0 dBm IF OUT ? Operating voltage range: 2.7 to 4 V
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CMH0819
VQFN-24
142-j
CMH0819
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L5 marking
Abstract: 800 mhz Cellular amplifier circuit diagram
Text: CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm
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CMH0819
VQFN-24
142-j
CMH0819
L5 marking
800 mhz Cellular amplifier circuit diagram
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cdma Booster schematic
Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….
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B132-H9014-X-X-7600
NB07-1094
cdma Booster schematic
uwb transceiver
BGH182M
ESDOP8RFL
bridge 45 b 50 20 c1v
TRANSISTOR SMD CODE PACKAGE SOT89 52 10A
DVB-T Schematic set top box
BF776
DVB-t receiver schematic diagram
microstrip Antenna 5.8ghz
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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smr-3822
Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM
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Jun08
smr-3822
x-band power transistor 50W
SMR-5550
x-band mmic lna
HF multicoupler
GAAS FET AMPLIFIER x-band 10w
x-band microwave fet
SM4T mixer
PALLET FM AMPLIFIER 300 WATTS
x-band limiter
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