gaas fet marking B
Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source
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QL-1104E-A
July/2008)
GD-26,
MGF4951A/52A
MGF4953A/54A
MGF1951A
MGF1952A
MGF1953A
MGF1954A
MGF4851A
gaas fet marking B
gaas fet micro-X Package marking
gaas fet marking a
marking K gaas fet
MGF1961A
gaas fet micro-X Package
gaas fet marking J
MGF1964A
MGF1963A
Micro-X marking "K"
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PDF
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GSO05553
Abstract: Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65
Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393
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Q62702-F1393
Q62702-F1394
GSO05553
GSO05553
Q62702-F1393
Q62702-F1394
smd 3520
CFY 35-23
GaAs FET cfy 14
CFY 19
CFY 65
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PDF
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GaAs FET cfy 19
Abstract: CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19
Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393
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Original
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Q62702-F1394
Q62702-F1393
GSO05553
GaAs FET cfy 19
CFY 35-20
F1393
f1394
GSO05553
Q62702-F1393
Q62702-F1394
smd code marking 814
cfy 19
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PDF
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gaas fet marking B
Abstract: FET GAAS marking a PS720C
Text: Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1 LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE NEPOC 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET Series DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS
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PS720C-1A
PS720C-1A
gaas fet marking B
FET GAAS marking a
PS720C
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PDF
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Siemens A 1458
Abstract: FET marking code 365
Text: SIEMENS CLY15 GaAs FET Datasheet * Power am plifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz 'O p e ra tin g voltage range: 2.7 to 6 V * P ^ at V 0=3V, f= 1.8 GHz typ. 31.5 dBm * Efficiency better 50% s s ~ /7 / d ^ ESD: G Electrostatic discharge sensitive device,
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OCR Scan
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CLY15
Q62702-L99
Siemens A 1458
FET marking code 365
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PDF
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HMC216MS8
Abstract: No abstract text available
Text: OBSOLETE PRODUCT HMC216MS8 / 216MS8E v02.0705 MIXERS - SINGLE & DOUBLE-BALANCED - SMT GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: Input IP3: +25 dBm @ +11 dBm LO • Base Stations
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HMC216MS8
216MS8E
HMC216MS8E
HMC216MS8
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PDF
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CLY10
Abstract: No abstract text available
Text: SIEMENS CLY10 GaAs FET D a t a s h e e t * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * P „1Tat Vn=3V, f=1,8GHz 28.5 dBm typ. * High efficiency better 55 % 3 p k S 2 1 ESD: V PSC5 I6 J
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OCR Scan
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CLY10
Q62702-L94
CLY10
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PDF
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siemens gaas fet
Abstract: gaas fet marking J
Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163
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OCR Scan
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S0S163
Q62702-L90
615ms
i77mS-
417ps
siemens gaas fet
gaas fet marking J
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PDF
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P012
Abstract: ISO-14001 KP028J P0120008P RR0816 marking c7 sot-89
Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure
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P0120008P
43dBm
OT-89
P0120008P
P012
ISO-14001
KP028J
RR0816
marking c7 sot-89
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PDF
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P0110009P
Abstract: Susumu RL series part Marking KP029J P0120009P RR0816 marking c7 sot-89
Text: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure
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P0120009P
48dBm
OT-89
P0120009P
P0110009P
Susumu RL series part Marking
KP029J
RR0816
marking c7 sot-89
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PDF
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fet 741
Abstract: P0110002P KP022J P0120002P RR0816 pin details of FET eudyna transistors catalog ic 4075 or gate
Text: Technical Note P0120002P 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)
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P0120002P
250mW
41dBm
OT-89
P0120002P
fet 741
P0110002P
KP022J
RR0816
pin details of FET
eudyna transistors catalog
ic 4075 or gate
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PDF
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KP027J
Abstract: P0120007P RR0816
Text: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure
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P0120007P
250mW
41dBm
OT-89
P0120007P
KP027J
RR0816
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PDF
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Motorola transistor smd marking codes
Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,
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P0110003P
Abstract: P0120003P ISO-14001 KP023J RR0816 GaAS fet sot89
Text: P0120003P Technical Note 800mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +27 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure
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Original
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P0120003P
800mW
43dBm
OT-89
P0120003P
P0110003P
ISO-14001
KP023J
RR0816
GaAS fet sot89
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nec 205b
Abstract: PS7205B-1A PS7205B-1A-E3 PS7205B-1A-E4 PS7205B-1A-F3 PS7205B-1A-F4 nec+205b
Text: DATA SHEET Solid State Relay OCMOS FET PS7205B-1A 4-PIN SOP, 0.9 Ω LOW ON-STATE RESISTANCE 80 V BREAK DOWN VOLTAGE, 500 mA CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET DESCRIPTION The PS7205B-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS
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PS7205B-1A
PS7205B-1A
nec 205b
PS7205B-1A-E3
PS7205B-1A-E4
PS7205B-1A-F3
PS7205B-1A-F4
nec+205b
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1 Ω LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE 1.25 A CONTINUOUS LOAD CURRENT −NEPOC 1-ch Optical Coupled MOS FET Series− DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS
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PS720C-1A
PS720C-1A
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PDF
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PS720C-1A
Abstract: PS720C-1A-F3-A
Text: Solid State Relay OCMOS FET PS720C-1A 4-PIN SOP, 0.1 Ω LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS720C-1A is a low on-state resistance solid state relay containing a GaAs LED on the input side and MOS
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PS720C-1A
PS720C-1A
PS720C-1A-F3-A
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PDF
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P0110009P
Abstract: gaas fet marking a ISO-14001 KP029J P0120009P RR0816 48dBm High power fet 2.4ghz
Text: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package
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P0120009P
48dBm
OT-89
17GHz
KP029J
P0120009P
P0110009P
gaas fet marking a
ISO-14001
KP029J
RR0816
48dBm High power fet 2.4ghz
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PDF
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sumitomo 131 datasheet
Abstract: DC 8881 ml marking ml marking sot 89 ISO-14001 KP028J P0120008P RR0816
Text: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package
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P0120008P
43dBm
OT-89
17GHz
KP028J
P0120008P
sumitomo 131 datasheet
DC 8881
ml marking
ml marking sot 89
ISO-14001
KP028J
RR0816
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PDF
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ml marking sot 89
Abstract: bc 339 DC 8881 ml marking ISO-14001 KP024J P0120003P P0120004P RR0816 IDS400
Text: P0120004P Technical Note 1.5W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +30 dBm output power · Up to +45dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package
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P0120004P
45dBm
OT-89
17GHz
KP024J
P0120004P
ml marking sot 89
bc 339
DC 8881
ml marking
ISO-14001
KP024J
P0120003P
RR0816
IDS400
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PDF
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DC 8881
Abstract: umt1n applications P0110003P ml marking ml marking sot 89 ISO-14001 KP023J P0120003P RR0816 GaAS fet sot89
Text: P0120003P Technical Note 800mW GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +27 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package
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Original
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P0120003P
800mW
43dBm
OT-89
17GHz
KP023J
P0120003P
DC 8881
umt1n applications
P0110003P
ml marking
ml marking sot 89
ISO-14001
KP023J
RR0816
GaAS fet sot89
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PDF
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FET bias
Abstract: AT1506 AT1506R SSOP20
Text: AT1506 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors
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AT1506
AT1506
16-pin
FET bias
AT1506R
SSOP20
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PDF
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BC 547 pnp
Abstract: ISO-14001 KP027J P0120002P P0120007P RR0816 Ids2590 toko 4437
Text: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package
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Original
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P0120007P
250mW
41dBm
OT-89
17GHz
KP027J
P0120007P
BC 547 pnp
ISO-14001
KP027J
P0120002P
RR0816
Ids2590
toko 4437
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PDF
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sumitomo 131 datasheet
Abstract: P0120002P ml marking sot 89 ISO-14001 KP022J RR0816 marking c7 sot-89 P0110002P
Text: P0120002P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)
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Original
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P0120002P
250mW
41dBm
OT-89
17GHz
KP022J
P012rally,
sumitomo 131 datasheet
P0120002P
ml marking sot 89
ISO-14001
KP022J
RR0816
marking c7 sot-89
P0110002P
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PDF
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