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    GAAS FET MARKING J Search Results

    GAAS FET MARKING J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    GAAS FET MARKING J Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    cfy 19 siemens

    Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
    Text: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan     		VXM05208 Q62703-F106 Q62703-F107 Q62703-F108 0Qfcj75Cn cfy 19 siemens cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 CFY 10 PDF

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original     		QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K" PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET Features • Low noise • High gain • Fo r lo w -noise front end am plifiers • Fo r D B S dow n co nverters 5:1 E S D : E le c tro sta tic d is c h a rg e se n sitive de v ice , o b se rv e handling pre ca utio ns! Type Marking


    OCR Scan     		PDF

    CLY10

    Abstract: No abstract text available
    Text: SIEMENS CLY10 GaAs FET D a t a s h e e t * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * P „1Tat Vn=3V, f=1,8GHz 28.5 dBm typ. * High efficiency better 55 % 3 p k S 2 1 ESD: V PSC5 I6 J


    OCR Scan     		CLY10 Q62702-L94 CLY10 PDF

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    LOT CODE NE NEC

    Abstract: NEC TRANSISTOR MARKING CODE date code marking NEC mini mold transistor 25 nec lot number on packing label code marking NEC hjfet 2SC5006 transistor 24 C2H marking
    Text: Information TAPING SPECIFICATIONS OF SUPER MINI MOLD SEMICONDUCTORS FOR HIGH FREQUENCY USE Document No. P10687EJ4V0IF00 4th edition Date Published March 1998 N CP(K) 1997 Printed in Japan This document is subject to change according to improving the specifications.


    Original     		P10687EJ4V0IF00 us588-6130 LOT CODE NE NEC NEC TRANSISTOR MARKING CODE date code marking NEC mini mold transistor 25 nec lot number on packing label code marking NEC hjfet 2SC5006 transistor 24 C2H marking PDF

    NEC Ga FET marking L

    Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
    Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima


    OCR Scan     		GET-30749, GET-30749 NE29200 NE674 uPG501B uPG501P uPG503B uPG503P uPG506B NEC Ga FET marking L tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    LTC1429

    Abstract: No abstract text available
    Text: Final Electrical Specifications r jr w im J k v / LTC1550/LTC1551 Low Noise, S w itch e d C a p a c ito r-R e g u la te d V o lta g e Inverters . TECHNOLOGY January 1996 FCATUR6S D C S C M P T IO n • Regulated Negative Voltage from Single Positive Supply


    OCR Scan     		LTC1550/LTC1551 900kHz 1550/LTC1551 5518Mbfl 1550/LTC 100mA LTC1261 LTC1429 LTC1429 PDF

    LTC1429

    Abstract: LTC1261 LTC1550 LTC1551
    Text: Final Electrical Specifications LTC1550/LTC1551 Low Noise, Switched Capacitor-Regulated Voltage Inverters January 1996 U DESCRIPTION FEATURES The LTC 1550/LTC1551 are switched-capacitor voltage inverters with internal linear post regulators. Each is available with a fixed – 4.1V output. Typical output ripple


    Original     		LTC1550/LTC1551 1550/LTC1551 LTC1550/LTC1551 900kHz 254mm) 100mA LTC1261 LTC1429 LTC1429 LTC1261 LTC1550 LTC1551 PDF

    date code marking NEC

    Abstract: code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking gaas fet marking a NEC PART NUMBER MARKING gaas fet marking C P13560EJ2V0DS
    Text: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7200H-1A 4-PIN SOP, 2.2 Ω LOW ON-STATE RESISTANCE 1-ch Optical Coupled MOS FET DESCRIPTION The PS7200H-1A is a low on-state capacitance solid state relay containing a GaAs LED on the light emitting side


    Original     		PS7200H-1A PS7200H-1A date code marking NEC code marking NEC NEC MARKING CODE RELAY code marking NEC NEC Date code Marking nec gaas fet marking gaas fet marking a NEC PART NUMBER MARKING gaas fet marking C P13560EJ2V0DS PDF

    KGF2236

    Abstract: k2236 J0124 16PSSOP TA 8644 12943
    Text: This version: Jul. 1998 Previous version: — E2Q0056-18-73 ¡ electronic components KGF2236 ¡ electronic components KGF2236 Dual Monolithic GaAs Power FET GENERAL DESCRIPTION The KGF2236, housed in a SMD-type plastic package, is a dual monolithic GaAs power FET that


    Original     		E2Q0056-18-73 KGF2236 KGF2236, KGF2236 100000pF k2236 J0124 16PSSOP TA 8644 12943 PDF

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 PDF

    XMFP1-M3

    Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
    Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••


    Original     		Rating3-5698410 XMFP1-M3 D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428 PDF

    VNA-25 equivalent

    Abstract: 414 monolithic amplifier mcl-25 rf 5253 1007 VNA-25 marking f25 6635 fet MCL 25 marking K gaas fet
    Text: Monolithic Amplifier 0.5-2.5 GHz, Monolithic GaAs FET MMIC Amplifier Product Features • 0.5 – 2.5 GHz • Single Voltage Supply • Internally matched to 50 ohms • Low variation of performance over temperature VNA-25+ VNA-25 + RoHS compliant in accordance


    Original     		VNA-25+ VNA-25 2002/95/EC) IPC/JEDECJ-STD-020C C/85RH VNA-25 equivalent 414 monolithic amplifier mcl-25 rf 5253 1007 VNA-25 marking f25 6635 fet MCL 25 marking K gaas fet PDF

    HMC216MS8

    Abstract: h216
    Text: HMC216MS8 / 216MS8E v02.0705 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: IP3 Input : +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB


    Original     		HMC216MS8 216MS8E HMC216MS8E HMC216MS8 h216 PDF

    H216

    Abstract: HMC216MS8 gaas fet marking a marking c gaas fet 216MS8E HMC216MS8E
    Text: HMC216MS8 / 216MS8E v02.0705 7 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: IP3 Input : +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm • WirelessLAN Conversion Loss: 8.5 dB


    Original     		HMC216MS8 216MS8E HMC216MS8E HMC216MS8 H216 gaas fet marking a marking c gaas fet 216MS8E PDF

    Siemens A 1458

    Abstract: FET marking code 365
    Text: SIEMENS CLY15 GaAs FET Datasheet * Power am plifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz 'O p e ra tin g voltage range: 2.7 to 6 V * P ^ at V 0=3V, f= 1.8 GHz typ. 31.5 dBm * Efficiency better 50% s s ~ /7 / d ^ ESD: G Electrostatic discharge sensitive device,


    OCR Scan     		CLY15 Q62702-L99 Siemens A 1458 FET marking code 365 PDF

    HMC216MS8

    Abstract: No abstract text available
    Text: OBSOLETE PRODUCT HMC216MS8 / 216MS8E v02.0705 MIXERS - SINGLE & DOUBLE-BALANCED - SMT GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: Input IP3: +25 dBm @ +11 dBm LO • Base Stations


    Original     		HMC216MS8 216MS8E HMC216MS8E HMC216MS8 PDF

    FSC60ML

    Abstract: FUJITSU GaAs FET Fujitsu GaAs FET Amplifier gaas fet marking D gaas fet marking a nf 817
    Text: FSC60ML General Purpose GaAs FET FEATURES • Low Noise Figure: NF=0.8dB Typ. @ f=4GHz • High Associated Gain: Gas=11dB (Typ.) @ f=4GHz • Small Size: 6 pin Plastic Package for SMT Applications. DESCRIPTION The FSC60ML is a low noise GaAs FET with an N-channel Schottky gate


    Original     		FSC60ML FSC60ML FCSI0598M200 FUJITSU GaAs FET Fujitsu GaAs FET Amplifier gaas fet marking D gaas fet marking a nf 817 PDF

    siemens gaas fet

    Abstract: TMS 1600 marking S221
    Text: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,


    OCR Scan     		Q62702-L96 siemens gaas fet TMS 1600 marking S221 PDF

    HMC216MS8

    Abstract: No abstract text available
    Text: HMC216MS8 / 216MS8E v02.0705 10 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: Input IP3: +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm


    Original     		HMC216MS8 216MS8E HMC216MS8E HMC216MS8 PDF

    siemens gaas fet

    Abstract: gaas fet marking J
    Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163


    OCR Scan     		S0S163 Q62702-L90 615ms i77mS- 417ps siemens gaas fet gaas fet marking J PDF

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


    Original     		D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download PDF