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    GAAS FET SOT89 Search Results

    GAAS FET SOT89 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    OPA2137EA/250 Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy
    OPA2137EA/250G4 Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy
    OPA2137EA/2K5 Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy

    GAAS FET SOT89 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HWL30NPA L-Band GaAs Power FET Autumn 2002 V1 Features • Low Cost GaAs Power FETs • Class A or Class AB Operation • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description 2 1 3 The HWL30NPA is a Medium Power GaAs FET using


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    HWL30NPA HWL30NPA PDF

    70808

    Abstract: 82645 56260 0117 0317 HWL26NPA 104780 107867 lS12l GaAs FET sot89 78045
    Text: HWL26NPA L-Band GaAs POWER FET Autumn 2002 V1 Features • Plastic Packaged GaAs Power FET • Suitable for Commercial Wireless Applications • High Efficiency • 3V to 6V Operation Outline Dimensions 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description


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    HWL26NPA HWL26NPA 70808 82645 56260 0117 0317 104780 107867 lS12l GaAs FET sot89 78045 PDF

    an 17830

    Abstract: S3V 83 an 17830 a
    Text: HEXAWAVE HWL30NPA Hexawave, Inc. L-Band Medium Power GaAs FET Description Outline Dimensions The HWL30NPA is a Medium Power GaAs FET using surface mount type plastic package for various L-band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications.


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    HWL30NPA HWL30NPA 300mA an 17830 S3V 83 an 17830 a PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor KGF1637_ Plastic GaAs Power FET for FM and FDMA Cellular Applications DESCRIPTION The KGF1637 is a high power, high efficiency GaAs power FET that features high gain at high current w ith ultra low im pedance drive required for cellular, ISM, PH S and PCS applications. This device is


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    KGF1637_ KGF1637 OT-89 b72424D KGF1637 h72424D b72MBM0 PDF

    SHF-0189Z

    Abstract: SHF0189Z
    Text: SHF0189Z SHF0189Z 0.05Ghz to 6GHz, 0.5Watt GaAs HFET 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0189Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET


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    SHF0189Z 05Ghz SHF0189Z OT-89 27dBm 100mA. 40dBm SHF-0189Z PDF

    SHF-0289Z

    Abstract: SHF0289Z GaAS fet sot89 SHF0289ZSQ
    Text: SHF0289Z SHF0289Z 0.05GHz to 6GHz, 1.0Watt GaAs HFET 0.05GHz to 6GHz, 1.0WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0289Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves


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    SHF0289Z 05GHz SHF0289Z OT-89 30dBm 200mA. 43dBm SHF-0289Z GaAS fet sot89 SHF0289ZSQ PDF

    cq 0765

    Abstract: CQ 419 MARKING E2B KGF1638 0765 cq Ta 7210 p
    Text: O K I Semiconductor KGF1638 Plastic GaAs Power FET for GSM and TDMA Applications D E S C R IP T IO N The KGF1638 is a high power, high efficiency GaAs power FET that features high gain at high currents w ith ultra low im pedance drive required for cellular, ISM , PHS and PCS applications. This device is


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    KGF1638_ KGF1638 OT-89 33dBm) b724B40 KGF1638 242M0 cq 0765 CQ 419 MARKING E2B 0765 cq Ta 7210 p PDF

    SHF-0289

    Abstract: SHF0289Z marking H2Z sot-89 SHF-0289Z GaAS fet sot89 GaAs FET operating junction temperature 0289 marking h2 sot-89 140C .H2 MARKING SOT-89
    Text: SHF-0289 Z SHF-0289(Z) 0.05GHz to 6GHz, 1.0Watt GaAs HFET 0.05GHz to 6GHz, 1.0WATT GaAs HFET RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SHF-0289 is a high performance AIGaAs/GaAs Heterostructure FET (HFET)


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    SHF-0289 05GHz OT-89 30dBm 200mA. 43dBm SHF0289Z marking H2Z sot-89 SHF-0289Z GaAS fet sot89 GaAs FET operating junction temperature 0289 marking h2 sot-89 140C .H2 MARKING SOT-89 PDF

    SHF0189Z

    Abstract: SHF-0189Z H1 SOT-89 fet MARKING RFMD H1 SOT-89 transistor rf SHF-0189 lot code RFMD H1 SOT-89
    Text: SHF-0189 Z SHF-0189(Z) 0.05Ghz to 6GHz, 0.5Watt GaAs HFET 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF-0189 is a high performance AIGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET


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    SHF-0189 05Ghz OT-89 27dBm 100mA. 40dBm SHF0189Z SHF-0189Z H1 SOT-89 fet MARKING RFMD H1 SOT-89 transistor rf lot code RFMD H1 SOT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: E2Q0034-38-72 This version: Jul. 1998 Previous version: Jan. 1998 O K I electronic components_ KGF1633_ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


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    E2Q0034-38-72 KGF1633_ KGF1633, OT-89 KGF1633 KGF1633 PDF

    qs marking sot-89

    Abstract: No abstract text available
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0033-38-72 O K I electronic components_ KGF1631_ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1631, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


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    E2Q0033-38-72 KGF1631_ KGF1631, OT-89 KGF1631 24dBm KGF1631 qs marking sot-89 PDF

    KGF1633

    Abstract: zo 607
    Text: E2Q0034-38-72 This version: Jul. 1998 Previous version: Jan. 1998 OKI electronic components_ KGF1 6 3 3 _ Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


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    E2Q0034-38-72 KGF1633_ KGF1633, OT-89 KGF1633 KGF1633 zo 607 PDF

    FP101-G

    Abstract: f101g GaAS fet sot89 FP101 JESD22-A114 LL1608-FH MARKING CODE 51 5 fet sot-89 marking 9721
    Text: FP101 The Communications Edge TM High Dynamic Range FET Product Description Functional Diagram The FP101 is a high dynamic range GaAs FET packaged in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point


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    FP101 FP101 OT-89 Lead-free/Gre14 1-800-WJ1-4401 FP101-G f101g GaAS fet sot89 JESD22-A114 LL1608-FH MARKING CODE 51 5 fet sot-89 marking 9721 PDF

    MARKING CODE 51 5 fet sot-89

    Abstract: f101g FP101 FP101-G High Dynamic Range FET sot-89 SOT89 FET marking sot89 Marking code fp101
    Text: FP101 The Communications Edge TM High Dynamic Range FET Product Description Functional Diagram The FP101 is a high dynamic range GaAs FET packaged in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point


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    FP101 OT-89 FP101 1-800-WJ1-4401 MARKING CODE 51 5 fet sot-89 f101g FP101-G High Dynamic Range FET sot-89 SOT89 FET marking sot89 Marking code fp101 PDF

    KGF1633

    Abstract: GAAS FET AMPLIFIER 3400 Mhz
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0034-38-72 ¡ electronic components KGF1633 ¡ electronic components KGF1633 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1633, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


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    E2Q0034-38-72 KGF1633 KGF1633, OT-89 KGF1633 GAAS FET AMPLIFIER 3400 Mhz PDF

    KGF1631

    Abstract: No abstract text available
    Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0033-38-72 ¡ electronic components KGF1631 ¡ electronic components KGF1631 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1631, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


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    E2Q0033-38-72 KGF1631 KGF1631, OT-89 KGF1631 24dBm PDF

    KGF1638

    Abstract: GaAS fet sot89 112MA1 marking HD SOT89
    Text: This version: Jan. 1998 Previous version: Jun. 1996 E2Q0036-27-X3 ¡ electronic components KGF1638 ¡ electronic components KGF1638 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1638, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that


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    E2Q0036-27-X3 KGF1638 KGF1638, OT-89 KGF1638 High33 GaAS fet sot89 112MA1 marking HD SOT89 PDF

    80247

    Abstract: No abstract text available
    Text: HEXAWAVS HWL32NPA Hexawave, Inc. L-Band Power GaAs F ET Outline Dimensions Description The HWL32NPA is a medium Power GaAs FET using surface mount type plastic package for various L-Band applications. It is suitable for various 900 MHz, 1900 MHz MHz cellular/wireless applications.


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    HWL32NPA HWL32NPA 80247 PDF

    AS15D

    Abstract: sot89 fet GaAs FET sot89 FET SOT89 ANCLC2R45J100AAA
    Text: MICROWAVE PRODUCTS m u ffa ta GaAs FET/Antenna •Small Signal FET XMFS Series Parts Number j XMFS2-M1 Package Main Characteristics Application Plastic F m in= 0.4 dB @ 2G H zi Gas— ^ d B DBS Oscillator LNA (PCS. PDC, PHS F m in= 0.4 dB (@2GHz) G as=15dB


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    T-143) OT-89) Po--23dBm LDA36A1907A ANACLC1R90J025AAA R89J020AAa ANACGC1R48U024AAC AS15D sot89 fet GaAs FET sot89 FET SOT89 ANCLC2R45J100AAA PDF

    Untitled

    Abstract: No abstract text available
    Text: AM048MX-89-R Plastic Packaged GaAs Power FET April 2010 Rev 3 DESCRIPTION AMCOM’s AM048MX-89-R is part of SOT-89 Series of GaAs MESFETs. This part has a total gate width of 4.8 mm. The AM048MX-89-R is designed for high power microwave applications, operating up to 5 GHz.


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    AM048MX-89-R AM048MX-89-R OT-89 32dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: HWL30NPA 1234567 7 849A7BCDEF77 Autumn 2002 V1 Features • Low Cost GaAs Power FETs • Class A or Class AB Operation • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description1 2 1 3 The HWL30NPA is a Medium Power GaAs FET using


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    HWL30NPA 849A7BCDEF7 HWL30NPA PDF

    K 1358 fet transistor

    Abstract: 28428 A 27631 transistor xmfp1-m3 XMFP3-M3 064110 9-8318 GaAS fet sot89 S0731 65851
    Text: このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。 GaAs No.O35.pdf 98.3.18 GaAs FET GaAs FIELD EFFECT TRANSISTOR Cat.No. O35 このカタログはNo.O35をムラタのwebサイトよりPDF形式でダウンロードしたものです。


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    O35webPDF CGRM39 RMCR03 1000pF 4700pF K 1358 fet transistor 28428 A 27631 transistor xmfp1-m3 XMFP3-M3 064110 9-8318 GaAS fet sot89 S0731 65851 PDF

    J473

    Abstract: TA 70/04 D02S KGF1637 3144 0842 K 7256 M
    Text: O K I Semiconductor KGF1637_ Plastic GaAs Power FET for FM and FDMA Cellular Applications D E S C R IP T IO N The KGF1637 is a high power, high efficiency G aA s pow er FET that features high gain at high current with ultra low im pedance drive required for cellular, ISM, PH S and PCS applications. This device is


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    KGF1637 KGF1637 OT-89 72424D 24BMG J473 TA 70/04 D02S 3144 0842 K 7256 M PDF

    Stanford SHF-0289

    Abstract: SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189
    Text: Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


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    SHF-0289 30dBm 250mA. EDS-101241 Stanford SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189 PDF