TGS 2201
Abstract: x-band limiter "Variable Capacitance Diode" X-band pin diode limiter VPIN Vertical P-I-N GaAs Diode limiters TGA2304-SCC x-band limiter diode ADS 10 diode RF limiter PIN diode
Text: VPIN Vertical P-I-N GaAs Diode Process Data Sheet Features Ti/Pt/Au, 0.6 µm • • • • • • • • • • p-GaAs, 0.25 µm Contacts i-GaAs, 1.2 µm n-GaAs, 0.75 µm Multiple P-I-N diode sizes Low on-state resistance Low off-state capacitance Device passivation
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PS2501 optocoupler
Abstract: LED pspice LED pspice model AN-3005 LED pspice datasheet pspice model pspice PS2501 PS2501-1 OPTOCOUPLER USED IN SIGNAL ISOLATOR
Text: A p p l i c at i o n N o t e AN 3005 Modeling phototransistor optocouplers using PSPICE simulation software CTR vs If by Van N. Tran Sample A B C D Staff Applications Engineer, CEL Opto Semiconductors Typically, an optocoupler is an optically-coupled isolator that uses a GaAs LED as a light source and a bipolar
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P521 OPTO
Abstract: p181 opto P521 opto coupler Opto Coupler p181 opto P181 p421 opto opto coupler P521 opto coupler P421 opto p521 cosmo 2010 4N35
Text: 2010-3 PRODUCT GUIDE Photocouplers and Photorelays h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g Preface As a type of isolator favored by manufacturers, photocouplers now serve as noise protectors in many electronic devices. Toshiba’s photocouplers consist of either a GaAs or
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TLP521-1
BCE0034E
P521 OPTO
p181 opto
P521 opto coupler
Opto Coupler p181
opto P181
p421 opto
opto coupler P521
opto coupler P421
opto p521
cosmo 2010 4N35
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ujt 2646
Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!
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D-81541
14-077S
Q62702-D1353
Q62702-G172
Q62702-G173
ujt 2646
TRANSISTOR J 5804
label infineon barcode
msc 1697
MSC 1697 IC pin diagram
Rohde und Schwarz Active Antenna HE 011
cd 6283 audio
smd transistor v75
log tx2 0909
IC data book free download
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Untitled
Abstract: No abstract text available
Text: P r e l i m in a r y d a t a s h e e t , B G V 5 0 3 , Ma y 2 0 0 2 BGV 503 Negative Voltage Generator for biasing GaAs FETs and Po w e r A m p l i f ie r s W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-05-16
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D-81541
EHT08520
EHT08521
BGV503
P-TSSOP-10
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VCSEL array, 850nm
Abstract: GaAs array, 850nm LX3044 LX3044-TR LX3045 LX3046 VCSEL array, 850nm flip
Text: Obsolete Product – Not Recommended For New Design LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die
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LX3044
LX3045,
LX3046,
50ohm
125mm
LX304X
VCSEL array, 850nm
GaAs array, 850nm
LX3044-TR
LX3045
LX3046
VCSEL array, 850nm flip
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APX378
Abstract: C116
Text: APX378 GaAs BEAM LEAD SCHOTTKY R E C E I V I N G D I O D E S FEATURES Noise figure : 7.5dB at 94GHz Low capacitance Extremely rugged Passivated planar process construction. A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used as mixer or detector in receivers of frequency
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APX378
94GHz
94GHz.
APX378)
APX378
C116
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L53SF4B
Abstract: L-34SF4C l53f3b
Text: Kingbright INFRARED EMITTING DIODES L34F3C AM4457F3C ! L53F3BT n j« | Emitting Color + Material P nm Lens Type Po (mW/sr) @20mA *50mA Min. Typ. i Viewing Angle Dimension 201/2 1.5mm (Side Look) 5.72(.225) AM4457F3C GaAs 940 water clear L34F3C GaAs 940
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AM4457F3C
L34F3C
L53F3BT
AM4457F3C
L34F3BT
L34SF7C
L34SF7BT
L53F3C
L53SF4B
L-34SF4C
l53f3b
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Untitled
Abstract: No abstract text available
Text: [sii OPTOELECTRONICS HERMETIC INFRARED LIG HT EM ITTIN G DIODES M etal Can Convex Lens P a rt N um ber E m is s io n A n g le @ 1 /2 P o w e r m in m ax Po O u tp u t P o w e r u n its V F/ I F V /(m A ) m ax (p A )/(V ) m ax N o te s I r/V r 9 4 0 nm GaAs
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1N6264
1N6266
CQX14
CQX16
LED55B
LED55C
LED56
u70/100
100mA
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"Schottky Barrier Diodes"
Abstract: dh38 dh379 DH378 DH385
Text: DH378.DH385 G a A s S C H O T T K Y R E C E I V I N G D I O D E S FEATURES Chip diodes : 2 to 60GHz Case style flexibility M208, BH10, F51. Operating frequency range : packaged diodes : 2 to 40GHz A P P L IC A T IO N S The GaAs SCHOTTKY barrier diodes are used
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DH378.
DH385
40GHz
60GHz
"Schottky Barrier Diodes"
dh38
dh379
DH378
DH385
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2SK574
Abstract: 4GHz-12
Text: "7^ -^U tii^tjg iiig ijU iM M d È S à ià im ìÌS S b È iÈ iiìÈ È iìS S ^ SONY COR P/C Oi lPO NE NT PRO DS •T.a ^ a j U M M M K S T? DE I f l 3 ñ 5 3 ñ 3 O D D O a S E S ro iñ s n a s 2SK574 GaAs N-channel MES FET O D e scrip tio n : The 2SK574 is a general purpose N-channel GaAs FET
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2SK574
2SK574
12GHz
4GHz-12
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SPD221P
Abstract: No abstract text available
Text: SM YO Packaged Type GaAs Schottky Barrier Diodes The Sanyo SPD S e r i e s a r e pa cka ge d ty pe GaAs S c h o t t k y b a r r i e r d i o d e s d e s i g n e d f o r c o n v e r t e r s , o p e r a t e d i n th e X band 8 . 2 m o d u l a t o r s , d e t e c t o r s t h a t can be
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/Ta-25fc
SGD100T)
SGD102T)
MT930622TR
SPD221P
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Untitled
Abstract: No abstract text available
Text: TPS9103 POWER SUPPLY FOR GaAs POWER AMPLIFIERS SLVS131 A -O C T O B E R 1995 - REVISED JULY 1996 PW PACKAGE TOP VIEW C h a r g e P u m p P r o v i d e s N e g a t i v e Ga t e Bias for D e p l e t i o n - M o d e G a A s P o w e r Amp l i f i e r s Buf f er e d Cl o c k O u t p u t to Dr i v e Add i t i o n a l
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TPS9103
SLVS131
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Untitled
Abstract: No abstract text available
Text: Ì m TAIWAN LITON ELECTRONIC «M i LITE HTE f li^ t ^ S ]> D003245 flflT GaAs T-l MODIFIED 3<t> INFRARED EMITTING DIODE LTE-208/209C • - f M I l] S $ £ ì&%ìI& I j ìì FEATURES • SELECTED TO S P E C IF IC A N D R A D IA N T O N -L IN E IN T E N S IT Y
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D003245
LTE-208/209C
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Silicon Point Contact Diode
Abstract: No abstract text available
Text: TYPICAL D.C. CHARACTERISTICS 36 37 1 Low barrier PDB 1 1 Ze o Bias P D B - 1 i Sta ndard GaAs Setlottky r .♦V ✓ 3 ^ ✓ l / • 4 ik \ " Standard GaAs \ Schottky \ I Low barrier PDB 2 " / X Zero Bia s PDB I 10 -20- ; Voltage N Current /mA 8 / Figure 10. Comparison of the l-V characteristics o f a 'zero bias' PDB diode, a low barrier PDB diode and a standard
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375GHz
DC1596)
OC1301)
-10dB
-20dB
35GHz
150pA.
Silicon Point Contact Diode
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Untitled
Abstract: No abstract text available
Text: M a n AM P c I om pany GaAs Schottky Mixer Diodes MA40400 Series V3.00 Features Case Styles • • • • Very Low Noise Figure from X through W-Band Low Junction Capacitance Low Series Resistance Wide Range of Available Product - Packaged Diodes - Chips
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MA40400
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c1g smd
Abstract: bpv10nf TEMD2100
Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -
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CQY36N
CQY37N
TSUS4300
TSUS4400
CQX48A
CQX48B
TSSS2600
TSUS5200
TSUS5201
TSUS5202
c1g smd
bpv10nf
TEMD2100
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Untitled
Abstract: No abstract text available
Text: S M ^ m - I M G a A s K O D EM S H Ì C O R P . INFRARED E M I T T I N G DI ODESIGaAs) EL-23G DIM ENSIONS Unit EL-23G The EL-23G is a h i g h - p o w e r GaAs IRED mounted : mm) ina clear low profile side-viewing package. This IRED is both compact and easy to mount.
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EL-23G
EL-23G
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SFH400-2
Abstract: LD275-2 IR remote control SFH205 sfh910 LD274-3 LD275-3 SFH402-2 LD242-3 Gaa 725
Text: Infrared Emitters Radiant tntenarty Package Outline r r n 0 r = ~ i p t— !ï-" à i h Part Number Package Type Surge Current HaH Angle mA (t< 10|ie ) A Fealuree Paga SFH420 SMTTOPLED ±60“ 2.5-5 100 GaAs, 950 nm. On tape and reel. 7-25 SFB421 SMTTOPLED
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SFH420
SFB421
SFH205,
BP104
BP103.
BP104,
BP103B.
LD271
LD271L
SFH400-2
LD275-2
IR remote control
SFH205
sfh910
LD274-3
LD275-3
SFH402-2
LD242-3
Gaa 725
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Untitled
Abstract: No abstract text available
Text: 3?bôSS2 0016453 132 « P L S B Si G E C P L E S S E Y S E M I C O N D U C T O R S DC1322/24 GaAs SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES These diodes are used in detector applications requiring a better noise figure than can be acheived with silicon diodes
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DC1322/24
250mW
200mW
DC1322
DC1324
600mV
-20dBm)
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LTR-301
Abstract: D0-201AD LTE-302
Text: Ü . LITE-ON INC m 5S3b3b7 QD01ÔS7 T « L T N 31E D i GaAs PLASTIC SIDE LOOK INFRARED EMITTING DIODE • S E L E C T E D TO S P E C IF IC O N -LIN E IN T E N S IT Y AND R A D IA N T IN T E N S IT Y R A N G ES . • LOW COST, P L A S T IC S ID E LO O KIN G P A C K A G E .
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LTR-301
LTE-302
553b3b7
D0201AD
D0-201AD
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LS 7447
Abstract: 7447 ls itt 7441
Text: T em ic TSIP440. S e m i c o n d u c t o r s GaAs/GaAlAs IR Emitting Diodes in 0 3 mm T-l Package Description T S I P 4 4 .- s e r ie s are h ig h e f f i c ie n c y in f r a r e d e m itt in g d io d e s in G a A I A s o n G a A s te c h n o lo g y , m o l d e d in c le a r ,
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TSIP440.
16-Oct-96
LS 7447
7447 ls
itt 7441
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DC1277
Abstract: DC1279F-T DC1276 DC1270 Gunn Diode e band DC1277G-T DC1278F DC1279C DC1279F 018ph diode
Text: 37bâ£22 DOlflS'îO TSD « P L S B Si GEC P L E S S E Y S E M I C O N D U C T O R S D S3420-1.2 DC1270/1220 Series MILLIMETRE WAVE GUNN DIODES STANDARD AND GRADED GAP Tha introduction of the DC1270/DC1220 Series extends the range of high power standard and graded-gap GaAs
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S3420-1
DC1270/1220
DC1270/DC1220
37bflS25
100MW
DC1276T
DC1277
DC1278
DC1279
DC1279F-T
DC1276
DC1270
Gunn Diode e band
DC1277G-T
DC1278F
DC1279C
DC1279F
018ph diode
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Untitled
Abstract: No abstract text available
Text: M 37bû522 D01Û4U5 Obb H P L S B GEC P L E S S E Y S E M I C O N D U C T O R S CT3510-1.2 DC1301/01 C & DC1332/33 GaAs SCHOTTKY X-BAND MICROSTRIP MIXER DIODES These diodes are used in mixer applications requiring a better noise figure than can be acheived with silicon diodes
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CT3510-1
DC1301/01
DC1332/33
DC1301
DC1301C
DC1332
DC1333
600mV
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